arXiv subjects

Mohamed Abdelilah Fadla

Publications and source records attributed to Mohamed Abdelilah Fadla.

3 recordsLinked to original sources

arXiv2026

β-Ga2O3-Based Heterojunctions: Exploring Growth Orientations and Alloying on Electronic Properties

We investigate the effects of alloying and growth orientation on the electronic properties of the ultra-wide bandgap semiconductor β-Ga2O3 and pseudomorphic (AlxGa1-x)2O3 alloy heterojunctions. Band offsets are computed from first principles using density functional theory (DFT) with the Heyd-Scuseria-Ernzerhof hybrid functional for different Al concentrations and four growth orientations, namely (100)B, (010), (001)B, and ($\bar{2}$01). Significant variations are found and ascribed to the strained pseudomorphic alloys. The values of the band offsets are fed into technology computer-aided design (TCAD) models of Schottky barrier diodes (SBD). I-V and C-V characteristics from the TCAD models show reasonable agreement with recent experimental measurements in the forward bias region. Discrepancies in the negative bias region are expected due to the ideality of the Schottky junctions considered in this study. Our findings underscore the critical role of growth orientation and strain in the accurate modelling of β-Ga2O3-based SBD.

cond-mat.mtrl-sci↗

arXiv2026

Universal Stability of Ga Split Vacancies across α-, β-, and κ-Ga2O3 Polymorphs: A Machine-Learning Accelerated Study

Split Ga vacancies are the dominant native acceptor in $β$-$Ga_2O_3$; however, their role in $α$ and $κ$ phases has been largely overlooked or assumed to be unfavorable. A detailed understanding of these defects is critical for tailoring the electrical conductivity and optical properties and optimising $Ga_2O_3$-based devices. In this work, we used machine learning interatomic potentials (MLIPs) to accelerate the discovery of non-local defect reconstructions, followed by HSE06 hybrid DFT to accurately quantify defect properties of single vacancy $V_{\text{Ga}}$, split vacancy $V_{\text{Ga}}^{\text{i}}$ and substitutional donors ($\mathrm{Hf_{Ga}}$ and $\mathrm{Si_{Ga}}$) across a wide range of experimentally relevant conditions for the oxygen chemical potential. We find that split vacancies are the ground-state vacancy for all studied polymorphs ($β$, $α$, and $κ$). Split vacancies are more stable than simple vacancies by ~0.75 eV ($β$), ~0.41 eV ($α$), and ~0.14 eV ($κ$). Notably, MLIPs correctly identified the specific split-vacancy ground states and yielded an energetic ordering of symmetry-inequivalent defect configurations in excellent agreement with HSE06 results. While Hf and Si show low formation energy and act as shallow donors, especially under oxygen-poor conditions, their efficiency is limited by split-vacancy compensation. The growth under oxygen-poor conditions is a universal requirement to suppress these defects and achieve high n-type conductivity across the $Ga_2O_3$ polymorph.

cond-mat.mtrl-sci↗

arXiv2025

Tailoring the Electronic Properties of Monoclinic (InxAl1-x)2O3 Alloys via Substitutional Donors and Acceptors

Ultra-wide bandgap semiconductors such as \b{eta}-Ga2O3 are ideal materials for next-generation power electronic devices. Electronic and mechanical properties of \b{eta}-Ga2O3 can be tuned by alloying with other sesquioxides, notably Al2O3 and In2O3. Moreover, by tuning the In content of a (InxAl1-x)2O3 alloy, its lattice constants can be matched to those of Ga2O3, while preserving a large conduction-band offset. In view of potential applications to \b{eta}-Ga2O3-based heterostructure, we performed atomistic modelling of (InxAl1-x)2O3 alloys using density functional theory to investigate thermodynamic and electrical properties of conventional group IV dopants (Si, Sn, C, Ge), alternative metal donors (Ta, Zr, Hf), and acceptors (Mg, Zn, Cu). The hybrid Heyd-Scuseria-Ernzerhof functional (HSE06) is used to accurately quantify the defect formation energies, ionization levels, and concentrations over a wide range of experimentally relevant conditions for the oxygen chemical potential and temperature. In our atomistic models, Hf and Zr show favourable properties as alternative donors to Si and other group IV impurities, especially under oxygen-poor conditions. Our findings also suggest that acceptors Mg, Zn, and Cu, while they cannot promote p-doping, can be still beneficial for the compensation of unintentionally n-doped materials, e.g., to generate semi-insulating layers and improve rectification.

cond-mat.mtrl-sci↗