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Mohamed Shehabeldin

Publications and source records attributed to Mohamed Shehabeldin.

5 recordsLinked to original sources

Altermagnetism produces pair emission and absorption from dark excitons and magnons in La$_2$O$_3$Mn$_2$Se$_2$

Altermagnets' (AMs) non-relativistic spin splitting enables novel states, spintronic and magneto-optical devices, though their optical signatures remain elusive. Here, we report exciton-magnon emission and absorption: optical sidebands from a spin-forbidden dark exciton, a direct consequence of altermagnetic symmetry. Combined optical spectroscopy and first-principles calculations reveal that La$_2$O$_3$Mn$_2$Se$_2$ is an altermagnetic insulator, hosting a strongly bound, spin-forbidden dark exciton and a higher-energy bright exciton. Photoluminescence (PL) and absorption reveal mirror-image sidebands, Stokes-shifted in emission and anti-Stokes-shifted in absorption, symmetric about the dark exciton, whose energy shifts and spectral shapes match the magnon energy scale and density of states measured independently by inelastic neutron scattering. The PL intensity tracks the full equal-time spin-spin correlator, combining static and dynamical contributions, and rules out alternative processes. This directly couples PL to magnetism, with potential for magneto-optical devices. These results establish exciton-magnon spectroscopy as a new route for optically identifying and exploiting AMs.

cond-mat.mtrl-sci↗

Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices

Air-sensitive 2D materials present a fundamental challenge for device integration. Encapsulation is often required to preserve intrinsic properties, yet conventional protection strategies often fail for thicker layers and complicate fabrication. Here, we demonstrate that electron-beam (e-beam) evaporated aluminum oxide ($\mathrm{AlO}_x$) serves as both an effective encapsulation layer and a platform for direct device fabrication. Unlike transfer-based approaches, this scalable method is compatible with thicker flakes and full device or wafer coverage. It requires no stacking procedures and enables contacts without post-encapsulation etching. Using rare-earth tritellurides ($\mathrm{RTe}_3$, R = La, Er), semimetallic $\mathrm{WTe}_2$, and superconducting $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$, we show that $\mathrm{AlO}_x$ suppresses oxidation and preserves intrinsic optical and electronic properties. We establish substrate-dependent optimization of encapsulation across a range of flake thicknesses, demonstrate that ultrathin $\mathrm{AlO}_x$ preserves $\mathrm{WTe}_2$'s plasmonic response and maintains superconducting performance in $\mathrm{FeTe}_x\mathrm{Se}_{1-x}$. Thus we overcome the longstanding tradeoff between encapsulation and straightforward device fabrication in fragile quantum materials.

cond-mat.mes-hall↗

Light-controlled van der Waals tunnel junctions: mechanisms, architectures, functionalities, and opportunities

The phenomenon of electron tunneling has long been central to quantum transport and continues to provide a powerful framework for understanding and controlling electronic processes in solids. When combined with optical excitation, tunneling becomes a particularly rich platform for experiments, because light can drive nonequilibrium carrier populations and open transport pathways that are inaccessible without optical excitation. The emergence of van der Waals (vdW) materials has greatly expanded this opportunity by enabling atomically thin heterostructures with clean interfaces, engineered barriers, and highly tunable band alignment. In this review, we discuss the fundamental mechanisms of photo-assisted transport and the realization of vdW tunnel junctions, and show how they provide electrical access to nonequilibrium dynamics and collective excitations in quantum materials. We further examine emerging functionalities including photodetection, tunneling-driven light emission, sensing, and memory. Finally, we present a forward-looking perspective on new opportunities such as quantum-geometric probes, twist-resolved spectroscopy, moire ferroelectricity, and scalable architectures for computing and sensing.

cond-mat.mes-hall↗

Programmable, Spontaneous Superlattice Memory in a Monolayer Topological Insulator

Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and ferromagnetism, where information is stored in charge or spin degrees of freedom. Here, we report a surprising discovery of a nonvolatile superlattice memory effect in monolayer TaIrTe4, a dual quantum spin Hall insulator, where information is encoded through sharply contrasting lattice periodicities. In particular, in a pristine monolayer, we observe the spontaneous emergence of a long-period superlattice that can be programmed ON and OFF in a nonvolatile manner by electrostatic tuning of low-energy electronic states. This switching toggles the system between two structural configurations with unit cell areas differing by nearly two orders of magnitude. Mechanistically, our results reveal two independent and distinct instabilities, one in the lattice and the other in the QSH electrons, which are coupled, leading to electrostatic control of lattice configurations with nonvolatile memory. This finding is enabled by combining linear and nonlinear transport measurements, Raman spectroscopy, and scanning tunneling microscopy, which probe complementary aspects of the underlying orders. Remarkably, this nonvolatile memory effect stabilizes a spontaneous superlattice with a periodicity on the few-nanometer scale that remains robust across a wide doping range, persists over days, and survives above 70 K. Combined with the QSH topology, this stability offers a promising route to nonvolatile memory control of topological flat bands and their filling enabled quantum states. Our preliminary data indeed show the emergence of new insulating states at fractional superlattice fillings, which can be clearly switched ON and OFF together with the superlattice.

cond-mat.mes-hall↗

Observation of the dual quantum spin Hall insulator by density-tuned correlations in a van der Waals monolayer

The convergence of topology and correlations represents a highly coveted realm in the pursuit of novel quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. However, the QSH insulator with quantized edge conductance remains rare, let alone that with significant correlations. In this work, we report a novel dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator that aligns with single-particle band structure calculations, manifesting enhanced nonlocal transport and quantized helical edge conductance. Interestingly, upon introducing electrons from charge neutrality, TaIrTe4 only shows metallic behavior in a small range of charge densities but quickly goes into a new insulating state, entirely unexpected based on TaIrTe4's single-particle band structure. This insulating state could arise from a strong electronic instability near the van Hove singularities (VHS), likely leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state, marked by the revival of nonlocal transport and quantized helical edge conduction. Our observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands via CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

cond-mat.mes-hall↗