arXiv subjects

Mohammad Jobayer Hossain

Publications and source records attributed to Mohammad Jobayer Hossain.

6 recordsLinked to original sources

arXiv2025

Advances in multijunction solar cells: an overview

The advanced multijunction solar cell (MJSC) has emerged as a frontrunner in photovoltaic literature due to its superior photoconversion efficiency (PCE) owing to its complex fabrication procedure and high costs. This article aims to systematically review the advancements of III-V MJSCs by focusing on computational modelling and experimental fabrication methodologies. In addition, it addresses the technical barriers that have hindered the progression of MJSC technology while also evaluating the current status and prospects of these cells. The findings indicate that III-V MJSCs hold significant promise for space applications. However, advancements in materials science, growth techniques, and structural optimization are crucial for reducing fabrication costs to make these cells more viable for terrestrial use. In this context, alternatives such as perovskite/Si or perovskite/chalcogenide tandem solar cells emerge as viable options. By synthesizing insights from a thorough analysis of recent literature, this review serves as a valuable resource for researchers, industry practitioners, and newcomers seeking to deepen their understanding of the research methodologies, growth techniques, and the associated challenges and opportunities within the realm of MJSCs.

physics.app-ph↗

arXiv2024

Photon Management in Silicon Photovoltaic Cells: A Critical Review

With the practical efficiency of the silicon photovoltaic (PV) cell approaching its theoretical limit, pushing conversion efficiencies even higher now relies on reducing every type of power loss that can occur within the device. Limiting optical losses is therefore critical and requires effective management of incident photons in terms of how they interact with the device. Ultimately, photon management within a PV cell means engineering the device and constituent materials to maximize photon absorption within the active semiconductor and therefore reduce the number of photons lost through other means, most notably reflection and parasitic absorption. There have been great advancements in the front and the rear side photon management techniques in recent years. This review aims to discuss these advancements and compare the various approaches, not only in terms of increases in photogenerated current, but also their compatibility with different PV cell architectures and potential trade-offs, like increased surface recombination or scalability for high-volume manufacturing. In this review, a comprehensive discussion of a wide variety of the front and the rear side photon management structures are presented with suggestions to improve the already achieved performance further. This review is unique because it not only presents the recent development in photon management techniques, but also offer through analysis of these techniques and pathways to improve further.

physics.optics↗

arXiv2019

Photon Management for Silicon Solar Cells featuring Hole-Selective Molybdenum Oxide Rear Contacts: An Optical Simulation Study

Passivated, hole-selective contacts play important role in reducing surface recombination by lowering the concentration of electrons in the rear side of a solar cell. However, parasitic optical losses in these contacts can still limit the performance of the cell. In this work, the long wavelength optical losses of silicon solar cells featuring hole-selective molybdenum oxide (MoOx) rear contacts are investigated using optical simulations. The potential of these selective contacts for possible enhancement of photogenerated current density was also investigated for their use with nanostructured dielectric layers.

physics.app-ph↗

arXiv2019

Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations

A high theoretical efficiency of 47.2% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a simulated quadruple junction solar cell under 1 sun concentration. The electronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This unique arrangement enables the cell absorb photons from ultraviolet to deep infrared wavelengths of the sunlight. Emitter and base thicknesses of the subcells and doping levels of the materials were optimized to maintain the same current in all the four junctions and to obtain the highest conversion efficiency. The short-circuit current density, open circuit voltage and fill factor of the solar cell are 14.7 mA/cm2, 3.38 V and 0.96 respectively. In our design, we considered 1 sun, AM 1.5 global solar spectrum.

physics.app-ph↗

arXiv2019

Detailed Performance Loss Analysis of Silicon Solar Cells using High-Throughput Metrology Methods

In this work, novel, high-throughput metrology methods are used to perform a detailed performance loss analysis of approximately 400 industrial crystalline silicon solar cells, all coming from the same production line. The characterization sequence includes a non-destructive transfer length method (TLM) measurement technique featuring circular TLM structures hidden within the busbar region of the cells. It also includes a very fast external quantum efficiency and reflectance measurement technique. More traditional measurements, like illuminated current-voltage, Suns-VOC, and photoluminescence imaging are also used to carry out the loss analysis. The variance of the individual loss parameters and their impact on cell performance are investigated and quantified for this large group of industrial solar cells. Some important correlations between the measured loss parameters are found. The nature of these distributions and correlations provide important insights about loss mechanisms in a cell and help prioritize efforts to optimize the performance of the production line.

physics.app-ph↗

arXiv2019

Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency

A high photon to electricity conversion efficiency of 47.2082% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design. The electronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This novel III-V arrangement enables the cell to absorb photons from the ultraviolet to deep infrared wavelengths of the solar spectrum. After careful consideration of important semiconductor parameters such as thicknesses of emitter and base layers, doping concentrations, diffusion lengths, minority carrier lifetimes and surface recombination velocities an optimized quadruple junction design has been suggested. Current matching of the subcell layers was ensured to obtain maximum efficiency from the proposed design. The short-circuit current density, open circuit voltage and fill factor of the solar cell are 14.7 mA/cm2, 3.3731 V and 0.9553 respectively. In the design process, 1 sun AM1.5 global solar spectrum was considered. The cell performance was also investigated for extraterrestrial illumination (AM0). A modified design is proposed for space applications. With a short circuit current density of 18.5 mA/cm2, open circuit voltage of 3.4104 and the fill factor of 0.9557, the power conversion efficiency of the modified quadruple junction design is 44.5473% in space.

physics.app-ph↗