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Mohammad Karimi

Publications and source records attributed to Mohammad Karimi.

4 recordsLinked to original sources

Enhanced Nonlinear Optical Responses of Layered Epsilon-Near-Zero Metamaterials at Visible Frequencies

Optical materials with vanishing dielectric permittivity, known as epsilon-near-zero (ENZ) materials, have been shown to possess enhanced nonlinear optical responses in their ENZ region. These strong nonlinear optical properties have been firmly established in homogeneous materials; however, it is as of yet unclear whether metamaterials with effective optical parameters can exhibit a similar enhancement. Here, we probe an optical ENZ metamaterial composed of a subwavelength periodic stack of alternating Ag and SiO$_2$ layers and measure a nonlinear refractive index $n_2 = (1.2 \pm 0.1) \times 10^{-12}$ m$^2$/W and nonlinear absorption coefficient $β= (-1.5 \pm 0.2) \times 10^{-5}$ m/W at its effective zero-permittivity wavelength. The measured $n_2$ is $10^7$ times larger than $n_2$ of fused silica and four times larger than that the $n_2$ of silver. We observe that the nonlinear enhancement in $n_2$ scales as $1/(n_0 \mathrm{Re}[n_0])$, where $n_0$ is the linear effective refractive index. As opposed to homogeneous ENZ materials, whose optical properties are dictated by their intrinsic material properties and hence are not widely tunable, the zero-permittivity wavelength of the demonstrated metamaterials may be chosen to lie anywhere within the visible spectrum by selecting the right thicknesses of the sub-wavelength layers. Consequently, our results offer the promise of a means to design metamaterials with large nonlinearities for applications in nanophotonics at any specified optical wavelength.

physics.optics

Superscattering, Superabsorption, and Nonreciprocity in Nonlinear Antennas

We propose tunable nonlinear antennas based on an epsilon-near-zero material with a large optical nonlinearity. We show that the absorption and scattering cross sections of the antennas can be controlled dynamically from a nearly superscatterer to a nearly superabsorber by changing the intensity of the laser beam. Moreover, we demonstrate that a hybrid nonlinear antenna, composed of epsilon-near-zero and high-index dielectric materials, exhibits nonreciprocal radiation patterns because of broken spatial inversion symmetry and large optical nonlinearity of the epsilon-near-zero material. By changing the intensity of the laser, the radiation pattern of the antenna can be tuned between a bidirectional and a unidirectional emission known as a Huygens source. Our study provides a novel approach toward ultrafast dynamical control of metamaterials, for applications such as beam steering and optical limiting.

physics.optics

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared

Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.

physics.optics

InP/InAsP Nanowire-based Spatially Separate Absorption and Multiplication Avalanche Photodetectors

Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.

physics.app-ph