SearcharxivSearch

arXiv subjects

Mojun Pan

Publications and source records attributed to Mojun Pan.

8 recordsLinked to original sources

Curvature-driven revival of charge density waves in non-Euclidean space

Strongly correlated quantum states, such as charge density waves (CDWs), are exquisitely sensitive to Fermi surface topology and lattice symmetry, and are typically quenched by heavy carrier doping. In two-dimensional (2D) systems, however, macroscopic geometric curvature emerges as a novel structural degree of freedom to modulate microscopic quantum coherence. This raises a compelling physical question: can non-Euclidean geometric deformations compete with extreme electronic perturbations to reshape, or even revive, a quenched macroscopic quantum order? Here, by constructing monolayer TiSe$_2$-NbSe$_2$ heterostructure on a BLG/SiC substrate for the first time, we report the curvature-driven revival of a frustrated charge order in a non-Euclidean space. Low-temperature angle-resolved photoemission spectroscopy (ARPES) reveals a massive interfacial charge transfer, which destroys the global Fermi surface nesting and completely suppresses the long-range CDW order in Euclidean flat regions. Strikingly, high-resolution scanning tunneling microscopy (STM) reveals that a novel, non-linear CDW state miraculously survives, remaining strictly localized within morphologically distorted, non-Euclidean nanoscale curved regions. Atomistic simulations unravel the structural origin of this phenomenon, demonstrating that interfacial twist and lattice mismatch spontaneously generate a corrugated superlattice.

cond-mat.mtrl-sci

Observation of Resonance of Kagome Flat Band Doublet

The interplay between local and itinerant electrons underpins many correlated and topological quantum states. Kagome lattices provide an ideal platform by hosting both flat (localized states) and dispersive bands (itinerant states), yet direct spectroscopic evidence of their dynamical coupling has remained elusive. Here we report the long-sought flat band resonance in the quasi-two-dimensional kagome bilayer material CsCr6Sb6. Using angle-resolved photoemission spectroscopy, transport measurements, and combined density functional theory and dynamical mean-field theory, we identify coexisting flat band doublets and dispersive bands near the Fermi energy. Upon cooling, the flat and dispersive bands exhibit a pronounced enhancement of spectral weight and hybridization, directly evidencing flat band resonance. Crucially, this emergence coincides with the onset of short-range antiferromagnetic correlations, contrasting sharply with conventional Kondo lattice behavior. Our findings demonstrate not only the long-sought flat band resonance in kagome materials, but also its unconventional correlation with magnetism.

cond-mat.str-el

Observation of spin-valley locked nodal lines in a quasi-2D altermagnet

The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples include ferromagnetic Weyl semimetals and antiferromagnetic axion insulators. Recently, altermagnets(AMs) have been identified as a distinct spin-splitting class of collinear antiferromagnets(AFMs), characterized by crystal symmetry that connects magnetic sublattices in real space and enforces C-paired spin-momentum locking in reciprocal space. These materials combine the advantages of nonrelativistic spin-polarization akin to FMs and vanished net-magnetization as AFMs, making them highly promising for spintronic applications. Furthermore, they introduce nontrivial spin-momentum locking spin texture as an additional degree of freedom for realizing novel quantum phases. In this work, we report the discovery of a new type of spin-valley-locked nodal line phase in the layered AM Rb-intercalated V{_2}Te{_2}O. By combining high-resolution spin and angle-resolved photoemission spectroscopy with first-principles calculations, we observe the coexistence of both spinless and spinful nodal lines near the Fermi level. Remarkably, the spinful nodal lines exhibit uniform spin polarization within each valley, while displaying opposite spin polarizations across symmetry-paired valleys-a unique feature we term spin-valley-locked nodal lines, which is exclusive to AMs. Direct measurements of out-of-plane band dispersion using a side-cleaving technique reveal the two-dimensional nature of these nodal lines. Our findings not only unveil a previously unexplored topological phase in AMs where valley-locked spin as an additional quantum character but also establish RbV{_2}Te{_2}O as a promising platform for spintronics, valleytronics, and moire-engineered quantum devices.

cond-mat.mtrl-sci

Nonvolatile photoswitching of a Mott state via reversible stacking rearrangement

Nonvolatile control of the Mott transition is a central goal in correlated-electron physics, offering access to fascinating emergent states and great potential for technological applications. Compared to chemical or mechanical approaches, ultrafast optical excitation further promises a path to create and manipulate novel non-equilibrium phases with ultimate spatiotemporal precision. However, achieving a truly nonvolatile electronic phase transition in laser-excited Mott systems remains an elusive challenge. Here, we present a highly robust and reversible method for optical control of the Mott state in van der Waals systems. Specifically, using angle-resolved photoemission spectroscopy, we observe a nonvolatile Mott-to-metallic transition in the ultrafast laser-excited charge density wave (CDW) material 1T-TaSe2. Complementary theoretical calculations reveal that this transition originates from a rearrangement of the interlayer CDW stacking. This new stacking order, formed following the ultrafast quenching of the CDW, circumvents the need for large-scale atomic sliding. Intriguingly, it introduces a significant in-plane component to the electron hopping and effectively reduces the ratio of on-site Coulomb interaction to bandwidth, thereby suppressing the Mott state and stabilizing a metallic phase. Our results establish optical-control of interlayer stacking as a versatile strategy for inducing nonvolatile phase transitions, opening a new route to tailor correlated electronic phases and realize reconfigurable high-frequency devices.

cond-mat.str-el

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

cond-mat.mtrl-sci

Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$

The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure.

cond-mat.mtrl-sci

Time-resolved ARPES with probe energy of 6.0/7.2 eV and switchable resolution configuration

We present a detailed exposition of the design for time- and angle-resolved photoemission spectroscopy using a UV probe laser source that combines the nonlinear effects of \b{eta}-BaB2O4 and KBe2BO3F2 optical crystals. The photon energy of the probe laser can be switched between 6.0 and 7.2 eV, with the flexibility to operate each photon energy setting under two distinct resolution configurations. Under the fully optimized energy resolution configuration, we achieve an energy resolution of 8.5 meV at 6.0 eV and 10 meV at 7.2 eV. Alternatively, switching to the other configuration enhances temporal resolution, yielding a temporal resolution of 72 fs for 6.0 eV and 185 fs for 7.2 eV. We validated the performance and reliability of our system by applying it to measuring two typical materials: the topological insulator MnBi2Te4 and excitonic insulator candidate Ta2NiSe5.

cond-mat.mes-hall

Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound

The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simplest degree of freedom is an ideal and highly desirable system for studying the fundamental physics of Mottness. In this study, we have unambiguously identified such an anticipated Mott insulator in a van der Waals layered compound Nb3Cl8. In the high-temperature phase, where interlayer coupling is negligible, density functional theory calculations for the monolayer of Nb3Cl8 suggest a half-filled flat band at the Fermi level, whereas angle-resolved photoemission spectroscopy experiments observe a large gap. This observation is perfectly reproduced by dynamical mean-field theory calculations considering strong electron correlations, indicating a correlation-driven Mott insulator state. Since this half-filled band derived from a single 2a1 orbital is isolated from all other bands, the monolayer of Nb3Cl8 is an ideal realization of the celebrated single-band Hubbard model. Upon decreasing the temperature, the bulk system undergoes a phase transition, where structural changes significantly enhance the interlayer coupling. This results in a bonding-antibonding splitting in the Hubbard bands, while the Mott gap remains dominant. Our discovery provides a simple and seminal model system for investigating Mott physics and other emerging correlated states.

cond-mat.str-el