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Monica S. Allen

Publications and source records attributed to Monica S. Allen.

4 recordsLinked to original sources

Self-powered InAs nanowire detector arrays for extended-SWIR spectrometry at room temperature

Spectral sensing in the extended shortwave infrared (e-SWIR) is important for molecular analysis, infrared imaging, and machine vision, motivating the development of compact spectrometers for broader applications. However, conventional commercial off-the-shelf spectrometers in this wavelength region are expensive and bulky due to their reliance on external dispersive optics/filters and/or cryogenic accessories. Other emerging computational spectrometers are based on Si and InGaAs photodetectors that remain focused on the visible and near-infrared, with few detector platforms operating in the e-SWIR regime that simultaneously provide broadband sensitivity, low-noise room-temperature operation, and diverse spectral signatures for accurate identification and reconstruction. Here, we report a room-temperature e-SWIR computational spectrometer based on InAs/InP core-shell nanowire photodetector arrays with geometry-encoded spectral responses. The detectors exhibit self-powered broadband photoresponse across the 1--3 $μ$m range, with responsivity up to 0.215 A W$^{-1}$, detectivity up to $1.6 \times 10^{9}$ cm Hz$^{1/2}$ W$^{-1}$, and microsecond response times. The excellent detector performance is leveraged to demonstrate filter-free spectral reconstruction using a compact multipixel photodetector array device. This enables high-accuracy molecular absorption spectrum reconstruction and hyperspectral imaging. Our results indicate that InAs nanowire arrays are a promising platform for compact computational spectrometry and imaging in the e-SWIR at room temperature.

physics.optics

Co-existing topological and Volkov-Pankratov plasmonic edge states in magnetized graphene

Graphene placed in a perpendicular magnetic field supports optical modes known as magnetoplasmons which are transversally confined to the graphene layer. Unlike ordinary graphene plasmons, these magnetoplasmonic surface waves are characterized by a band gap corresponding to the cyclotron frequency. In addition, these magnetoplasmon bands are topological, characterized by a non-zero Chern number. This leads to the existence of topologically protected edge states at domain edges where the Chern number changes. Since the Chern number is dependent on the direction of the magnetic field, edge states exist at domain edges across which the magnetic field flips direction. Physically, the magnetic field can only flip direction at gradual domain edges with finite width creating topological heterojunctions. These topological heterojunctions support extra edge states known as Volkov-Pankratov edge states which can enter the band gap and support propagation in both directions. The number of Volkov-Pankratov states at a heterojunction varies as a function of the width of the gradual domain edge.

cond-mat.mes-hall

Invertible Optical Nonlinearity in Epsilon-near-zero Materials

Epsilon-near-zero (ENZ) materials such as indium tin oxide (ITO), have recently emerged as a new platform to enhance optical nonlinearities. Here we report a theoretical and experimental study on the origin of nonlinearities in ITO thin films that are dominated by two mechanisms based on intraband and interband transitions. We show that there are two competing factors that jointly contribute to a spectrally-invertible nonlinearity of ITO near its ENZ region i.e. the non-parabolicity of the band structure that results in a larger effective mass in the intraband transition and the Fermi energy shift, which determines the free carrier density. Our work reveals the relationship between the large nonlinearity and the intrinsic material properties of the ITO films.

cond-mat.mtrl-sci

Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate prediction of the optical transitions in these devices . The optimized models presented in this paper are able to reproduce the experimental results with an error less than 1$\%$. The effects of incident light polarization, alloy mole fraction, quantum dot dimensions, and doping have been investigated. The in-plane polarized light absorption is more significant than the perpendicularly polarized light absorption. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to changes in the dot diameter, but almost insensitive to changes in the dot height. This unpredicted behavior is explained by sensitivity analysis of different factors which affect the optical transition energy.

cond-mat.mes-hall