arXiv subjects

Moslem Zare

Publications and source records attributed to Moslem Zare.

12 recordsLinked to original sources

arXiv2020

Probing divacancy defects in a zigzag graphene nanoribbon through RKKY exchange interaction

We investigate the effect of vacancy defects on the electronic and magnetic properties of zigzag graphene nanoribbons (zGNRs) by making use of the Green's function formalism in combination with the tight-binding Hamiltonian. The evolution of the indirect exchange coupling, known as Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, including single, double, and multiple 5-8-5 divacancy defects is explained. Our numerical calculations show that the changes in the electronic structure and the exchange coupling of zGNRs depend significantly on the location of the divacancy defects with respect to the ribbon edges and on the number of the divacancy defects. In the case both the impurities are located on the edge, the magnitude of the exchange coupling is several orders of magnitude strengthen that result when they are placed on the interior of the nanoribbon. Furthermore, a periodic divacancy causes a dramatic change in the magnetic ground state of the ribbon. In the limit of high vacancy potential, the strength of the RKKY interaction is approximately independent of the Fermi energy.

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arXiv2019

RKKY plateau in zero- and one-dimensional triangular Kagome lattice models

Motivated by the research interests on realizing flat bands and magnetization plateaus in kagome lattices, we study the electronic properties and magnetic interactions in both zero- and one-dimensional triangular Kagome lattice (1D-TKL) models, by using the real-space Greens function approach in tight-binding model. We firstly study the electronic properties of both 0D and 1D-TKL in the presence of staggered sublattice potential, then, by analyzing the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction in these lattice structures, the magnetic ground states of both 0D and 1D-TKL in the presence of two magnetic adatoms are evaluated. It is found that the 1D channels of TKL show different electronic and magnetic behaviors due to different values of the hopping integrals and spin-orbit couplings. Two important salient features of these TKLs are the presence of flat bands in their band structure as well as the emergence of the RKKY plateaus versus the Fermi energy. These RKKY plateaus have not been reported before, to the best of our knowledge. The most remarkable observation is the potential and Fermi energy variation of the width and location of the RKKY plateaus in both 0D and 1D TKLs. The spatial configurations of the magnetic impurities can also dramatically change the quality and quantity of the RKKY plateaus. We believe that our results provide significant insights towards designing further experiments to search for the realizing of the flat bands and magnetization plateau phases in spintronics and pseudospin electronics devices based on TKLs.

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arXiv2019

Tuning the electronic structure and magnetic coupling in armchair B$_2$S nanoribbons using strain and staggered sublattice potential

Monolayer B$_2$S has been recently unveiled as a desirable honeycomb monolayer with an anisotropic Dirac cone. We investigate the Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction, between two magnetic impurity moments in armchair-terminated B$_2$S nanoribbons in the presence of strain and staggered sublattice potential. By using an accurate tight-binding model, we firstly study the electronic properties of all infinite-length armchair B$_2$S nanoribbons (ABSNRs), with different edges, in the presence of both strain and staggered potential. The ABSNRs show different electronic and magnetic behaviors due to different edge morphologies. The band gap energy of ABSNRs depends strongly upon the applied staggered potential and thus one can engineer the electronic properties of the ABSNRs via tuning the external staggered potential. A complete and fully reversible semiconductor (or insulator) to metal transition has been observed via tuning the external staggered potential, which can be easily realized experimentally. A prominent feature is the presence of a quasiflat edge mode, isolated from the bulk modes in the ABSNRs belong to the family $M=6p$, with $M$ the width of the ABSNR and $p$ an integer number. The position of the quasi-flatbands(QFBs) in the energy diagram of ABSNRs can be shifted by applying the in-plane strains. At a critical staggered potential, for nanoribbons of arbitrary width, the QFB changes to a perfect flatband. The RKKY interaction has an oscillating behaviour in terms of the applied staggered potentials and width of the ribbon, such that for two magnetic adatoms randomly distributed on the surface of an ABSNR the staggered potential can reverse the RKKY from antiferromagnetism to ferromagnetism and vice versa. Our findings pave the way for applications in spintronics and pseudospin electronics devices based on ABSNRs.

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arXiv2019

Tilt-induced anomalous thermal transport in normal/superconducting borophane junctions

We study charge and heat transport in normal-metal/superconductor (NS) hybrid junction, based on a tilted anisotropic Dirac material. Using the extended Blonder-Tinkham-Klapwijk formalism, the conductance spectra of NS borophane, a two-dimensional Dirac semimetal with two tilted anisotropic Dirac cones in its dispersion, is investigated. Completely different from the usual normal-metal-superconductor junctions, in spite of the large mismatch in Fermi wavevectores of the normal-metal and superconductor sides of the borophane NS junction, the electron-hole conversion happens with unit probability at normal incidences. Furthermore, we demonstrate that in the heavily doped superconducting regime for heavily doped normal borophane, the electron-hole conversion happens with unit probability, approximately at any incident angle. The dependence of the Andreev with Fermi energy and bias voltage, enable us, selecting the retroconfiguration or specular configuration in types of Andreev reflection processes. We numerically establish an anomalous behavior of thermal conductance in borophane. The tilting of the Dirac cones gives rise to an anomalous behaviour in the thermal conductance of the NS hybrid junction of borophane, such that the thermal conductance decreases by increasing the temperature. Our findings will have potential applications for transport and energy control in superconducting quantum interference devices and hybridized mesoscopic systems.

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arXiv2018

Thermoelectric transport properties of borophane

We theoretically study the influence of impurity scattering on the electric and thermal transport of borophane layer, a two-dimensional anisotropic Dirac semi-metal with two tilted and anisotropic Dirac cones. In a systematic framework, we have calculated exactly the electrical conductivity and thermoelectric coefficients of borophane in the presence of the short-range, long-range charged impurity and the short-range electro-magnetic (SREM) scatterers, by using the exact solution of the Boltzmann transport equation within the linear-response theory. Contrary to the large electron-hole asymmetry in borophane, its electron-hole conductivity is nearly symmetric. Interestingly, for the short-range scatters, just like graphene, the short-range conductivities of borophane have the constant values, independent of the chemical potential, while the conductivities of the SREM scatterers are linearly dependent on the chemical potential. Regardless of the impurity type, the electric conductivity of borophane is highly anisotropic, while the Seebeck coefficient and figure of merit (${\it ZT}$) are isotropic. Along with the ambipolar nature of the borophane thermopower, a very high value of ${\it ZT}$ around unity is obtained at room temperature, due to the large asymmetry between electrons and holes in borophane. More importantly, borophane attains its maximum value of ${\it ZT}$ at very low chemical potentials, in the vicinity of the charge neutrality point. In comparison to phosphorene, a highly unique anisotropic 2D material, borophane with a higher anisotropy ratio ($\sigma_{xx}/\sigma_{yy}\sim10$), is an unprecedented anisotropic material. This high anisotropy ratio together with the large figure of merit, suggest that borophane is promising for the thermoelectric applications and transport switching in the Dirac transport channels.

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arXiv2018

Resonance spin transfer torque in ferromagnetic/normal/ferromagnetic spin-valve structure of topological insulators

We theoretically study the spin current and spin-transfer torque generation in a conventional spin- valve hybrid structure of type ferromagnetic/normal metal/ferromagnetic (FM/NM/FM) made of the topological insulator (TI), in which a gate voltage is attached to the normal layer. We demonstrate the penetration of the spin-transfer torque into the right ferromagnetic layer and show that, unlike graphene spin-valve junction, the spin-transfer torque in TI is very sensitive to the chemical potential of the NM region. As an important result, by changing the chemical potential of the NM spacer and magnetization directions, one can control all components of the STT. Interestingly, both the resonance spin current and the resonance spin-transfer torque appear for energies determined from a resonance equation. By increasing the chemical potential of the NM spacer, the amplitude of the STTs decreases while at large chemical potentials of $\mu_N$ there are intervals of chemical potential in which both the spin current and the spin-transfer torque become zero. These findings could open new perspectives for applications in spin-transfer torque magnetic random access memory (STT-MRAM) devices based on TI.

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arXiv2018

Exchange interaction of magnetic impurities in biased bilayer phosphorene nanoribbon

We study exchange interaction in zigzag bilayer phosphorene nanoribbons (ZBLPNRs) under a perpendicular electric field. We evaluate the spatial and electric field dependency of static spin susceptibility in real space in various configurations of magnetic impurities at zero temperature. The electronic properties of ZBLPNR in the presence of a gate voltage is also obtained. In comparison to the other two-dimensional (2D) materials such as graphene and silicene, ZBLPNR has two nearly degenerated quasiflat edge modes at the Fermi level, isolated from the bulk states. The band gap modulation of ZBLPNRs by the ribbon width and perpendicular electric field is investigated. Due to the existence of these quasiflat bands at the Fermi level, in the absence of the electric field, a sharp peak in the RKKY interaction is seen. As shown, the signatures of these quasiflat edge modes in ZBLPNRs could be explored by using the RKKY interaction. In the presence of a large bias potential, a beating pattern of the RKKY oscillations occurs when two impurities located inside the ZBLPNR. The electrically tunable RKKY coupling of ZBLPNRs is expected to have important consequences on the spintronic application of biased ZBLPNR.

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arXiv2017

Strongly anisotropic RKKY interaction in monolayer black phosphorus

We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in two-dimensional black phosphorus, phosphorene. The RKKY interaction enhances significantly for the low levels of hole doping owing to the nearly valence flat band. Remarkably, for the hole-doped phosphorene, the highest RKKY interaction occurs when two impurities are located along the zigzag direction and it tends to a minimum value with changing the direction from the zigzag to the armchair direction. We show that the interaction is highly anisotropic and the magnetic ground-state of two magnetic adatoms can be tuned by changing the rotational configuration of impurities. Owing to the anisotropic band dispersion, the oscillatory behavior with respect to the angle of the rotation is well-described by $\sin(2k_{\rm F}R)$, where the Fermi wavelength $k_{\rm F}$ changes in different directions. We also find that the tail of the RKKY oscillations falls off as $1/R^2$ at large distances.

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arXiv2017

Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with $n$-doped F and $p$-doped N regions and also a finite conductance in the AP configuration with the N region of $n$-type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

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arXiv2016

Thermoelectric transport in monolayer phosphorene

We apply the generalized Boltzmann theory to describe thermoelectric transport properties of monolayer phosphorene in the presence of short- and long-range charged impurity interactions. First, we propose a low-energy Hamiltonian to explore the accurate electronic band structure of phosphorene in comparison with those results obtained by density-functional simulations. We explain the effect of the coupling between the conduction and valence bands on the thermoelectric properties. We show that the electric conductivity of phosphorene is highly anisotropic, while the Seebeck coefficient and figure of merit, without being influenced via either the presence or absence of the coupling term, are nearly isotropic. Furthermore, we demonstrate that the conductivity for the $n$ type of doping is more influenced by the coupling term than that of the $p$ type. Along with thermopower sign change, profound thermoelectric effects can be achieved.

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arXiv2016

Topological phase and edge states dependence of the RKKY interaction in zigzag silicene nanoribbon

We propose versatile materials based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a zigzag silicene nanoribbon (ZSNR) on half filling in the presence of an out-of-plane electric field. We show that the topological phase transition in the band dispersion of ZSNR can be probed by using the RKKY interaction. We find that, due to the zero-energy edge states of the ZSNR, the exchange coupling is significantly enhanced when the impurities are located on the zigzag edges, and also explore that the strength of the interaction in the topological insulator phase is much greater than that when the system is in the band insulator region. We present a model to investigate the phase of a system of two magnetic impurities located on the edge of the ZSNR and find that three different magnetic phases, spiral, ferromagnetic, and anti-ferromagnetic, are possible for different values of the electric field. This electrical tunability of the magnetic phases in silicene can be explored by using current experimental techniques and can be of interest in the field of spintronics.

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arXiv2014

Valley- and spin-filter in monolayer MoS$_2$

We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS$_2$) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the ferromagnetic region. By using a modified Dirac Hamiltonian and the scattering formalism, we find that the polarizations can be tuned by applying a gate voltage and changing the exchange field in the structure. We further demonstrate that the presence of a topological term ($β$) in the Hamiltonian results in an enhancement or a reduction of the charge conductance depending on the value of the exchange field.

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