arXiv subjects

Moumita Kundu

Publications and source records attributed to Moumita Kundu.

4 recordsLinked to original sources

arXiv2026

Nanoscale Confinement Enhances Ultrafast Demagnetization

Nanoscale miniaturization has revolutionized the field of spintronics by enabling exponential growth in areal bit density. A similar leap is also expected in device speeds through successfully harnessing femtosecond magnetization dynamics. However, combining this with the miniaturization of realistic devices is challenging. To address this, we studied the effect of dimensional confinement on the femtosecond demagnetization of Fe. By gradually increasing the level of confinement while keeping excitation conditions constant, we found that Fe layers thinner than 10 nm exhibit enlarged demagnetization amplitudes, reaching a $\sim75\%$ increase at 2 nm. By combining ultrafast experiments sensitive to the spins, the charge carriers, and the phonons, we establish that this finite$\text{-}$size effect is magnetic in origin and is not phonon$\text{-}$driven. With the support of ab$\text{-}$initio calculations and atomistic spin dynamics simulations, we identify the enhancement effect as due to local weakening of spin order at the Fe$\text{'}$s interface, which becomes significant upon increased confinement.

cond-mat.mes-hall↗

arXiv2025

Altermagnetic magnon transport in the \textit{d}-wave altermagnet \ch{LuFeO3}

Altermagnets exhibit a spin-split band structure despite having zero net magnetization, leading to special magnonic properties such as anisotropic magnon lifetimes and field-free spin transport. Here, we present a direct experimental demonstration of non-local magnon transport in the \textit{d}-wave altermagnet \ch{LuFeO3}, using both spin Seebeck and spin Hall effect-based injection and detection. We observe a non-local spin signal at zero magnetic field when the transport is along an altermagnetic direction, but not for transport along other directions. The observed sign reversal between two distinct altermagnetic directions in the spin Seebeck response demonstrates the altermagnetic nature of the magnon transport. In contrast, when transport is aligned along or perpendicular to the easy axis, both the first-harmonic signal and the sign-reversal effect vanish, consistent with symmetry-imposed suppression. These findings are supported by atomistic spin dynamics simulations, as well as linear spin wave theory calculations, which explain how our altermagnetic system hosts anisotropic spin Seebeck transport. Our results provide direct evidence of direction-dependent magnon splitting in altermagnets and highlight their potential for field-free magnonic spin transport, offering a promising pathway for low-power spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Magnetic domains in ultrathin, bulk-like and proximity-coupled Europium Oxide

The control of electron spins in materials that are simultaneously ferromagnetic and insulating opens up a wealth of quantum phenomena in spin-based electronics. Thin films of europium oxide (EuO) are ideal for the generation and manipulation of spin-polarized states, but so far there are no experimental literature reports on the magnetic domain patterns for EuO. However, at these microscopic length scales, magnetic relaxation between the remanent and demagnetized states takes place in any spintronic device. This relaxation process involves displacements of magnetic domain walls and can therefore be strongly influenced by the film structure and thickness. Here we present an investigation of the temperature-dependent behavior of magnetic domains and hysteresis in bulk-like (25 nm) and ultrathin (3 nm) EuO films. Magneto-optical Kerr microscopy is used, a technique that is a valuable tool to explore microscopic features such as spin dynamics and magnetic domain walls. Significant Kerr rotation in EuO led to high-contrast magnetic domain images in thick films, facilitating observation of domain dynamics. The critical temperature (TC) and coercivity shows strong thickness-dependent variations. The analysis and comparison of hysteresis loops and domain imaging in EuO and EuO/Co reveal proximity effect-induced antiferromagnetic coupling of both layers. To elucidate the magnetization reversal dynamics in EuO, micromagnetic simulations using MuMax3 were performed below and above TC. This comprehensive approach aims to comprehend the impact of magnetism and magnetic proximity effect in EuO on the micromagnetic scale, potentially extending its magnetic ordering beyond TC.

cond-mat.mtrl-sci↗

arXiv2024

2D synthetic ferrimagnets by magnetic proximity coupling

Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface. For a low-TC rare-earth FM coupled to a 3d transition metal FM, even room temperature magnetism is within reach. In addition, magnetic proximity coupling is particularly promising for increasing the magnetic order of metastable materials such as europium monoxide (EuO) beyond their bulk TC, since neither the stoichiometry nor the insulating properties are modified. We investigate the magnetic proximity effect at Fe/EuO and Co/EuO interfaces using hard X-ray photoelectron spectroscopy. By exciting the FM layers with circularly polarized light, magnetic dichroism is observed in angular dependence on the photoemission geometry. In this way, the depth-dependence of the magnetic signal is determined element-specifically for the EuO and 3d FM parts of the bilayers. In connection with atomistic spin dynamics simulations, the thickness of EuO layer is found to be crucial, indicating that the observed antiferromagnetic proximity coupling is a short-ranged and genuine interface phenomenon. This fact turns the bilayer into a strong synthetic ferrimagnet. The increase in magnetic order in EuO occurs in a finite spatial range and is therefore particularly strong in the 2D limit-a counterintuitive but very useful phenomenon for spin-based device applications.

cond-mat.mtrl-sci↗