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Muhammad R. Islam

Publications and source records attributed to Muhammad R. Islam.

5 recordsLinked to original sources

The Low Frequency Trap: Video Language Models Fail at Simple Event Bookkeeping

Real-world video benchmarks provide broad coverage, but their fixed clips entangle event count, rate, duration, and visual complexity, making failure modes hard to isolate. While existing programmatic benchmarks offer better control, they score only the final answer rather than auditing reported events against executable ground truth. To bridge this gap, we introduce trace-grounded parametric profiling for event counting in three controlled video tasks: bouncing-ball wall contacts, visual blinks, and categorical state transitions. Across 2,190 videos, we vary event count N and frequency F while holding rendering fixed. Each video includes an executable event trace for capability-surface estimation and timestamp-level evaluation. Our results reveal a staged temporal failure. At an 80% reliability threshold, Gemini 3.6 Flash reliably counts persistent state transitions up to 12 events at 0.5 and 1.0 Hz, yet demonstrates no reliable positive-count region for transient blinking events. Thus, event representation dictates whether a model initially accesses evidence -- a limitation that compounds as count and frequency increase. In the high-count, high-frequency regime, only 0.2% of final counts are correct and the model recovers just 18.1% of true events. To test if visual access is the primary bottleneck, we increase sampling rate. Although this boosts Bounce Ball accuracy from 19.6% to 29.3%, the reported sequence agrees with ground truth only 3.7% of the time. Extra frames can therefore inflate final scores without producing faithful event recovery. Different prompting strategies yield similarly limited gains, and real-world video evaluations show the same concentration of success at low event counts. Ultimately, trace-grounded profiling shifts video evaluation from aggregate accuracy metrics to a detailed diagnostic of where temporal reasoning fails.

cs.AI

Photoluminescence quenching in gold - MoS2 hybrid nanoflakes

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate plasmonic-exciton interactions and charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, gas sensing, catalysis, and biosensing. Here we consider pristine MoS2 and study its interaction with Au nanoislands, resulting in local variations of photoluminescence (PL) associated with various Au-MoS2 hybrid configurations. By controllably depositing monolayers of Au on MoS2 to form Au nanostructures of given size and thickness, we investigate the electronic structure of the resulting hybrid systems. We present strong evidence of PL quenching of MoS2 as a result of charge transfer from MoS2 to Au: p-doping of MoS2. The results suggest new avenues for 2D nanoelectronics, active control of transport or catalytic properties.

cond-mat.mes-hall

Recent progress in parallel fabrication of individual single walled carbon nanotube devices

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.

cond-mat.mes-hall

Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.

cond-mat.mes-hall

A general approach for high yield fabrication of CMOS compatible all semiconducting carbon nanotube field effect transistors

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were optimized for the assembly of individual s-SWNT, 97% of the devices show FET behavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 and on conductance up to 3 μS, however with an assembly yield of only 33%. As the DEP parameters were optimized so that 1-5 s-SWNTs are connected per electrode pair, the assembly yield was almost 90% with ~ 90% of these assembled devices demonstrating FET behavior. Further optimization gives an assembly yield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%. Improved FET performance including higher current on-off ratio and high switching speed were obtained by integrating a local Al2O3 gate to the device. Our 90% FET with 90% assembly yield is the highest reported so far for carbon nanotube devices. Our study provides a pathway which could become a general approach for the high yield fabrication of CMOS compatible carbon nanotube FETs.

cond-mat.mes-hall