arXiv subjects

Mukesh Kumar Dasoundhi

Publications and source records attributed to Mukesh Kumar Dasoundhi.

5 recordsLinked to original sources

arXiv2026

Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation

A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrPS4. Temperature-dependent Raman spectroscopy reveals spin-phonon coupling persisting up to T*~120K, concomitant with local lattice distortion. The setting of vibronic progression in photoluminescence spectra suggests the strengthening of electron-phonon coupling around T*. Furthermore, both the electrical transport and optoelectronic response also change significantly at T*. The results indicate that spin-phonon coupling above TN in CrPS4 originates from local lattice distortion induced by short range magnetic correlations which in turn enhances the electron-phonon interaction. Furthermore, using a CrPS4/In2Se3 heterostructure, we demonstrate that the anomaly associated with the coupled degrees of freedom in CrPS4 also influences the adjacent In2Se3 layer. The lattice dynamics of In2Se3 is significantly modified across the magnetic anomaly of CrPS4, and the coupled dynamics is observed at T*. These interfacial manifestation opens up new possibilities for achieving correlated multifunctionalities in artificially designed heterostructure.

cond-mat.mtrl-sci↗

arXiv2023

Role of defects on carrier dynamics and transport mechanism in Bi2Te3 single crystals

Defects play an important role in determining the type of carriers as well as on tuning the physical properties of layered materials. In this study, we have demonstrated that by varying the growth kinetics one can control the defects and can achieve electrons or holes dominated Bi2Te3 single crystals using modified Bridgman method. The correlation between structural defects and the type of dominant charge carriers in crystals are discussed using X-Ray diffraction and Hall resistivity. Electrons are found to be originating from Te vacancy type defects, while holes are manifested from predominant structural defects viz. Bi_Te antisite defects or interstitial Te atoms. We observe that the alteration of charger carriers from electrons to holes have enhanced magnetoresistance (MR) from 103% to 224%. The enhancement in MR emerges from 2D multichannel quantum coherent conduction mechanism.

cond-mat.mtrl-sci↗

arXiv2022

Growth of rare-earth monopnictide DySb single crystal by novel Self-flux method

This report presents a new synthesis protocol for the single crystal growth of rare earth monopnictide DySb by self-flux technique. A detailed structural, transport and magnetic characterization have been done using X-Ray diffraction (XRD), High resolution X-Ray diffraction (HRXRD), resistivity and magnetization measurements respectively. The Rietveld refinement of powder XRD pattern confirms that the grown crystal is in single phase and crystallizes in space group Fm3m(225) of rock-salt type crystal structure. HRXRD on cleaved crystal confirms the single crystalline nature while rocking curve analysis reveals the high quality of the grown crystal. Temperature dependent resistivity and magnetization measurements show a transition at 9.7K from paramagnetic (PM) to antiferromagnetic (AFM) state.

cond-mat.mtrl-sci↗

arXiv2021

Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe

We report a comprehensive magneto-transport study on single crystalline p-type topological crystalline insulator (TCI) SnTe, across the cubic-to-rhombohedral (R3m) transition which occurs as a function of temperature. The electrical resistivity of a well-characterized SnTe crystal shows evidence for the cubic-to-rhombohedral structural transition at T$_s$ $\sim$64,K and a carrier density of $\sim$1.8$\times$10$^{20}$ at 77,K. As a function of applied magnetic field perpendicular to the (100) plane, SnTe exhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of 42% at 5K and 8T. LMR is found to have a direct dependence on the mobility and a detailed analysis shows that it follows the classical Parish-Littlewood model of conductivity fluctuations arising from macroscopic inhomogeneity of tellurium interstitial atoms. We also observe SdH oscillations in the rhombohedral (R3m) phase with a Berry phase of $π$ and significantly lower carrier density $\sim$5.32$\times$10$^{11}$cm$^{-2}$ at 2K, which provides direct evidence of protected topological surface states in the (R3m) phase. The Hall conductivity shows a transformation from one band to two-band behavior across the structural transition, thus providing experimental evidence for the degeneracy lifting of bulk valence bands below the cubic symmetry breaking point which is consistent with recent band structure calculations. The overall results indicate that magneto-transport studies can distinctly probe the surface and bulk sensitive properties of SnTe, and can also track the band-splitting of degenerate bands at the Fermi level across the cubic-to-rhombohedral (R3m) transition.

cond-mat.mtrl-sci↗

arXiv2020

Extremely large linear magnetoresistance in Antimony crystal

In this letter we report the observation of extremely large non-saturating linear magnetoresistance (MR) in Antimony(Sb) crystal. An extremely large magnetoresistance (XMR) of 43000% at 2K and large unsaturating MR$\sim\ $70% at room temperature is observed at the magnetic field of 9T. Hall measurements reveal a very high mobility $\sim\ $3.8 x 10$^{4}$ cm$^{2}$/Vs of charge carriers and strong temperature dependence of carrier concentration and mobility. The respective scaling of MR and crossover field (B$_{c}$) from quadratic to linear MR with mobility and inverse of mobility describes the classical origin of large linear MR in this crystal as suggested by Parish and Littlewood (PL) model for disordered systems.

cond-mat.mtrl-sci↗