arXiv subjects

Muneaki Hase

Publications and source records attributed to Muneaki Hase.

At least 37 records · Page 2Linked to original sources

arXiv2020

The effect of ion irradiation on dephasing of coherent optical phonons in GaP

The dephasing of coherent longitudinal optical (LO) phonons in ion-irradiated GaP has been investigated with a femtosecond pump-probe technique based on electro-optic sampling. The dephasing time of the coherent LO phonon is found to be dramatically prolonged by the introduction of a small amount of defects by means of Ga-ion irradiation. The maximum dephasing time observed at room temperature is 9.1 ps at a Ga$^{+}$ ion dose of 10$^{13}$/cm$^{2}$, which is significantly longer than the value of 8.3 ps for GaP before ion irradiation. The longer dephasing time is explained in terms of the suppression of electron-LO-phonon scattering by the presence of defect-induced deep levels.

cond-mat.mtrl-sci↗

arXiv2019

Giant nonlinear optical effects induced by nitrogen-vacancy centers in diamond crystals

We investigate the effect of nitrogen-vacancy (NV) centers in single crystal diamond on nonlinear optical effects using 40 fs femtosecond laser pulses. The near infrared femtosecond pulses allow us to study purely nonlinear optical effects, such as optical Kerr effect (OKE) and two-photon absorption (TPA), relating to unique optical transitions by electronic structures with NV centers. It is found that both the nonlinear optical effects are enhanced by the introduction of NV centers in the N$^{+}$ dose levels of 2.0$\times$10$^{11}$ and 1.0$\times$10$^{12}$ N$^{+}$/cm$^{2}$. In particular, our data demonstrate that the OKE signal is strongly enhanced for the heavily implanted type-IIa diamond. We suggest that the strong enhancement of the OKE is possibly originated from cascading OKE, where the high-density NV centers effectively break the inversion symmetry near the surface region of diamond.

quant-ph↗

arXiv2019

All-optical detection of periodic structure of chalcogenide superlattice using coherent folded acoustic phonons

Chalcogenide superlattices (SL) consist of alternate stacking of GeTe and Sb$_{2}$Te$_{3}$ layers. The structure can become a 3D topological insulator depending on the constituent layer thicknesses, making the design of the SL period a central issue for advancing chalcogenide SL as potential candidates for spin devices as well as for optimization of the current generation of phase-change memory devices. Here we explore the periodic structure of chalcogenide SL by observing coherent folded longitudinal acoustic (FLA) phonons excited by femtosecond laser pulse irradiation. The peak frequency of the FLA modes was observed to change upon variation of the thickness of the GeTe layer, which was well reproduced by means of an elastic continuum model. In addition, a new SL structure is unveiled for a sample consisting of thin GeTe and Sb$_{2}$Te$_{3}$ layers, which suggests intermixing of Ge atoms. This all-optical technique based on observation of coherent FLA modes offers a non-destructive characterization of superlattice structures at atomic resolution.

cond-mat.mtrl-sci↗

arXiv2019

A topological phase buried in a chalcogenide superlattice monitored by a helicity dependent Kerr measurement

Chalcogenide superlattices (SL), formed by the alternate stacking of GeTe and Sb$_{2}$Te$_{3}$ layers, also referred to as interfacial phase change memory (iPCM), are a leading candidate for spin based memory device applications. Theoretically, the iPCM structure it has been predicted to form a 3D topological insulator or Dirac semimetal depending on the constituent layer thicknesses. Here, we experimentally investigate the topological insulating nature of chalcogenide SLs using a helicity dependent time-resolved Kerr measurement. The helicity dependent Kerr signal is observed to exhibit a four cycle oscillation with $π$/2 periodicity suggesting the existence of a Dirac-like cone in some chalcogenide SLs. Furthermore, we found that increasing the thickness of the GeTe layer dramatically changes the periodicity, indicating a phase transition from a Dirac semimetal into a trivial insulator. Our results demonstrate that thickness-tuned chalcogenide SLs can play an important role in the manipulation of topological states, which may open up new possibilities for spintronic devices based on chalcogenide SLs.

cond-mat.mes-hall↗

arXiv2019

Photon Energy Dependence of Kerr Rotation in Chalcogenide Superlattices

We report on pump-probe based helicity dependent time-resolved Kerr measurements of chalcogenide superlattices, consisting of alternately stacked GeTe and Sb$_{2}$Te$_{3}$ layers under infrared excitation. The Kerr rotation signal consists of the specular Inverse Faraday effect (SIFE) and the specular optical Kerr effect (SOKE), both of which are found to monotonically increase with decreasing photon energy over a sub-eV energy range. Although the dependence of the SIFE can be attributed to a response function of direct third-order nonlinear susceptibility, the magnitude of the SOKE reflects cascading second-order nonlinear susceptibility resulting from electronic transitions from bulk valence band to interface-originating Dirac states of the superlattice.

cond-mat.mtrl-sci↗

arXiv2018

Zener Tunneling Breakdown in Phase-Change Materials Revealed by Intense Terahertz Pulses

We have systematically investigated the spatial and temporal dynamics of crystallization that occurs in the phase-change material Ge2Sb2Te5 upon irradiation with an intense THz pulse. THz pump and optical probe spectroscopy revealed that Zener tunneling induces a nonlinear increase in the conductivity of the crystalline phase. This result indicates that the large electric field associated with the THz pulses causes a nonlinear increase only at the edge of the crystallized area. The electric field concentrating in this area causes a temperature increase via Joule heating, which in turn leads to nanometer scale crystal growth parallel to the field and the formation of filamentary conductive domains across the sample.

cond-mat.mtrl-sci↗

arXiv2018

Ultrafast asymmetric Rosen-Zener-like coherent phonon responses observed in silicon

We investigate the spectral profiles of time signals attributed to coherent phonon generation in an undoped Si crystal. Here, the retarded longitudinal-optical (LO) phonon Green function relevant to the temporal variance of induced charge density of ionic cores is calculated by employing the polaronic quasiparticle model developed by the authors [Y. Watanabe et al., Phys. Rev. B 95, 014301 (2017); ibid., 96, 125204 (2017)]. The spectral asymmetry is revealed in the frequency domain of the signals under the condition that an LO phonon mode stays almost energetically resonant with a plasmon mode in the early time region; this lasts for approximately 100 fs immediately after the irradiation of an ultrashort pump-laser pulse. It is understood that based on the adiabatic picture in time, this asymmetry is caused by the Rosen-Zener coupling between both modes. The associated experimental results are obtained by measuring time-dependent electro-optic reflectivity signals, and it is proved that these are in harmony with the calculated ones. The spectra become more symmetric, as the photoexcited carrier density further changes from that meeting the above condition to higher and lower sides of carrier densities. Moreover, the effect of optical nutation of carrier density on the CP signals is addressed, and the present results are compared with the asymmetry caused by transient Fano resonance, and the spectral profiles observed in a GaAs crystal in the text.

cond-mat.mtrl-sci↗

arXiv2018

Ultrafast Dynamics of Electron-phonon Coupling in Transition-metal Dichalcogenides

Time-domain femtosecond laser spectroscopic measurements of the ultrafast lattice dynamics in 2H-MoTe2 bulk crystals were carried out to understand the carrier-phonon interactions that govern electronic transport properties. An unusually long lifetime coherent A1g phonon mode was observed even in the presence of very large density of photo-excited carriers at room temperature. The decay rate was observed to decrease with increasing excitation laser fluence. Based on the laser fluence dependence including the inducement of significant phonon softening and a peculiar decrease in phonon decay rate, we attribute the long lifetime lattice dynamics to weak anharmonic phonon-phonon coupling and a carrier-density-dependent deformation potential electron-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2018

Coherent Dirac plasmons in topological insulators

We explore the ultrafast reflectivity response from photo-generated coupled phonon-surface Dirac plasmons in Sb$_2$Te$_3$ topological insulators several quintuple layers thick. The transient coherent phonon spectra obtained at different time frames exhibit a Fano-like asymmetric line shape of the $A^2_{1g}$ mode, which is attributed to quantum interference between continuum-like coherent Dirac-plasmons and phonons. By analyzing the time-dependent asymmetric line shape using the two-temperature model (TTM), it was determined that a Fano-like resonance persisted up to $\approx$1 ps after photo-excitation with a relaxation profile dominated by Gaussian decay at $\leq$200 fs. The asymmetry parameter could be well described by the TTM for $\geq$200 fs, therefore suggesting the coherence time of the Dirac plasmon is $\approx$200 fs.

cond-mat.str-el↗

arXiv2018

A cascading nonlinear magneto-optical effect in topological insulators

Topological insulators (TIs) are characterized by possessing metallic (gapless) surface states and a finite band-gap state in the bulk. As the thickness of a TI layer decreases down to a few nanometer, hybridization between the top and bottom surfaces takes place due to quantum tunneling, consequently at a critical thickness a crossover from a 3D-TI to a 2D insulator occurs. Although such a crossover is generally accessible by scanning tunneling microscopy, or by angle-resolved photoemission spectroscopy, such measurements require clean surfaces. Here, we demonstrate that a cascading nonlinear magneto-optical effect induced via strong spin-orbit coupling can examine such crossovers. The helicity dependence of the time-resolved Kerr rotation exhibits a robust change in periodicity at a critical thickness, from which it is possible to predict the formation of a Dirac cone in a film several quintuple layers thick. This method enables prediction of a Dirac cone using a fundamental nonlinear optical effect that can be applied to a wide range of TIs and related 2D materials.

cond-mat.mtrl-sci↗

arXiv2017

Vibrational Energy Transfer from Photo-Excited Carbon Nanotubes to Proteins Observed by Coherent Phonon Spectroscopy

Vibrational energy transfer from photo-excited single-wall carbon nanotubes (SWCNTs) to coupled proteins is a key to engineer thermally induced biological reactions such as photothermal therapy. Here, we explored vibrational energy transfer from the photo-excited SWCNTs to different adsorbed biological materials by means of a femtosecond pump-probe technique. We show that the vibrational relaxation time of the radial breathing modes (RBMs) in SWCNTs significantly depends on the structure of coupled materials, i.e. proteins or biopolymers, indicating the vibrational energy transfer is governed by overlap of phonon density of states between the SWCNTs and coupled materials.

cond-mat.mtrl-sci↗

arXiv2017

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived ($>$100 ps) transient metastable state of Ge$_{2}$Sb$_{2}$Te$_{5}$ with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

cond-mat.mtrl-sci↗

arXiv2017

Irregular Oscillatory-Patterns in the Early-Time Region of Coherent Phonon Generation in Silicon

Coherent phonon (CP) generation in an undoped Si crystal is theoretically investigated to shed light on unexplored quantum-mechanical effects in the early-time region immediately after the irradiation of ultrashort laser pulse. One examines time signals attributed to an induced charge density of an ionic core, placing the focus on the effects of the Rabi frequency $Ω_{0cv}$ on the signals; this frequency corresponds to the peak electric-field of the pulse. It is found that at specific $Ω_{0cv}$'s where the energy of plasmon caused by photoexcited carriers coincides with the longitudinal-optical phonon energy, the energetically {\it resonant } interaction between these two modes leads to striking anticrossings, revealing irregular oscillations with anomalously enhanced amplitudes in the observed time signals. Also, the oscillatory pattern is subject to the Rabi flopping of the excited carrier density that is controlled by $Ω_{0cv}$. These findings show that the early-time region is enriched with quantum-mechanical effects inherent in the CP generation, though experimental signals are more or less masked by the so-called coherent artifact due to nonlinear optical effects.

cond-mat.mtrl-sci↗

arXiv2016

Polaronic-Quasiparticle Picture for Generation Dynamics of Coherent Phonons in Semiconductors: Transient and Non-Linear Fano Resonance

We examine generation dynamics of coherent phonons (CPs) in both of polar and non-polar semiconductors -- such as GaAs and Si -- based on a polaronic-quasiparticle (PQ) model. In the model concerned, the PQ operator is composed of two kinds of operators. One is a quasiboson operator -- defined as a linear combination of a set of pairs of electron operators -- and the other is a longitudinal optical (LO) phonon operator. The problem of transient and non-linear Fano resonance (FR) is tackled in particular; the vestige of this quantum interference effect was observed exclusively in lightly $n$-doped Si immediately after carriers were excited by an ultrashort pulse-laser [M. Hase et. al., Nature 426, 51 (2003)], though not observed yet in GaAs. It is shown that the phonon energy state is embedded in a continuum state formed by a set of adiabatic eigenstates of the quasiboson. This result implies the possibility of manifestation of the transient FR in the present optically-non-linear system.

cond-mat.mtrl-sci↗

arXiv2015

Coherent gigahertz phonons in Ge$_{2}$Sb$_{2}$Te$_{5}$ phase-change materials

Using $\approx$40 fs ultrashort laser pulses, we investigate the picosecond acoustic response from a prototypical phase change material, thin Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) films with various thicknesses. After excitation with a 1.53 eV-energy pulse with a fluence of $\approx$ 5 mJ/cm$^{2}$, the time-resolved reflectivity change exhibits transient electronic response, followed by a combination of exponential-like strain and coherent acoustic phonons in the gigahertz (GHz) frequency range. The time-domain shape of the coherent acoustic pulse is well reproduced by the use of the strain model by Thomsen et al. (Phys. Rev. B 34, 4129, 1986). We found that the decay rate (the inverse of the relaxation time) of the acoustic phonon both in the amorphous and in the crystalline phases decreases as the film thickness increases. The thickness dependence of the acoustic phonon decay is well modeled based on both phonon-defect scattering and acoustic phonon attenuation at the GST/Si interface, and it is revealed that those scattering and attenuation are larger in crystalline GST films than those in amorphous GST films.

cond-mat.mtrl-sci↗

arXiv2015

Frequency comb generation at THz frequencies by coherent phonon excitation in Si

High-order nonlinear light-matter interactions in gases enable generation of x-ray and attosecond light pulses, metrology, and spectroscopy. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing. Third-order nonlinear optical processes in silicon have been used to process optical signals with greater than 1 GHz bandwidths. Fundamental physical processes for a Si-based optical modulator in the THz bandwidth range, however, have not yet been explored. Here we demonstrate ultrafast phononic modulation of the optical index of Si by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical (LO) phonon of Si (15.6 THz) generates a frequency comb up to 7th-order. All optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the Si crystalline lattice at its highest mechanical frequency.

cond-mat.mtrl-sci↗

arXiv2015

Femtosecond structural transformation of phase-change materials far from equilibrium monitored by coherent phonons

Multi-component chalcogenides, such as quasi-binary GeTe-Sb$_{2}$Te$_{3}$ alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) in particular has proven to be one of the best-performing materials, whose reliability allows more than 10$^{6}$ write-erase cycles. Despite these industrial applications, the fundamental kinetics of rapid phase-change in GST remain controversial and active debate continues over the ultimate speed limit. Here we explore ultrafast structural transformation in a photo-excited GST superlattice, where GeTe and Sb$_{2}$Te$_{3}$ are spatially separated, using coherent phonon spectroscopy with pump-pump-probe sequences. By analysing the coherent phonon spectra in different time regions, complex structural dynamics upon excitation are observed in GST superlattice (but not in GST alloys), which can be described as the mixing of Ge sites from two different coordination environments. Our results suggest possible applicability of GST superlattice for ultrafast switching devices.

cond-mat.mtrl-sci↗

arXiv2015

Ultrafast dephasing of coherent optical phonons in atomically controlled GeTe/Sb$_{2}$Te$_{3}$ superlattices

Femtosecond dynamics of coherent optical phonons in GeTe/Sb$_{2}$Te$_{3}$ superlattices (SLs), a new class of semiconductor SLs with three different states, have been investigated by using a reflection-type pump-probe technique at various lattice temperatures. The time-resolved transient reflectivity (TR) obtained in as-grown SLs exhibits the coherent A$_{1}$ optical modes at 5.10 THz and 3.78 THz, while only the single A$_{1}$ mode at 3.68 THz is observed in annealed SLs. The decay rate of the A$_{1}$ mode in annealed SLs is strongly temperature dependent, while that in as-grown SLs is not temperature dependent. This result indicates that the damping of the coherent A$_{1}$ phonons in amorphous SLs is governed by the phonon-defect (vacancy) scattering rather than the anharmonic phonon-phonon coupling.

cond-mat.mtrl-sci↗