arXiv subjects

Mustafa Polat

Publications and source records attributed to Mustafa Polat.

3 recordsLinked to original sources

arXiv2023

Quantum transport regimes in quartic dispersion materials with Anderson disorder

Mexican-hat-shaped quartic dispersion manifests itself in certain families of single-layer twodimensional hexagonal crystals such as compounds of groups III-VI and groups IV-V as well as elemental crystals of group V. Quartic band forms the valence band edge in various of these structures, and some of the experimentally confirmed structures are GaS, GaSe, InSe, SnSb and blue phosphorene. Here, we numerically investigate strictly-one-dimensional (1D) and quasi-one dimensional (Q1D) nanoribbons with quartic dispersion and systematically study the effects of Anderson disorder on their transport properties with the help of a minimal tight-binding model and Landauer formalism. We compare the analytical expression for the scaling function with simulation data to deduce about the domains of diffusion and localization regimes. In 1D, it is shown that conductance drops dramatically at the quartic band edge compared to a quadratic band. As for the Q1D nanoribbons, a set of singularities emerge close to the band edge, which suppress conductance and lead to short mean-free-paths and localization lengths. Interestingly, wider nanoribbons can have shorter mean-free-paths because of denser singularities. However, the localization lengths do not necessarily follow the same trend. The results display the peculiar effects of quartic dispersion on transport in disordered systems.

cond-mat.dis-nn↗

arXiv2020

Atomic Collapse in Disordered Graphene Quantum Dots

In this paper, we numerically study a Coulomb impurity problem for interacting Dirac fermions restricted in disordered graphene quantum dots. In the presence of randomly distributed lattice defects and spatial potential fluctuations, the response of the critical coupling constant for atomic collapse is mainly investigated by local density of states calculations within the extended mean-field Hubbard model. We find that both types of disorder cause an amplification of the critical threshold. As a result, up to thirty-four percent increase in the critical coupling constant is reported. This numerical result may explain why the Coulomb impurities remain subcritical in experiments, even if they are supercritical in theory. Our results also point to the possibility that atomic collapse can be observed in defect-rich samples such as Ar$^{+}$ ion bombarded, He$^{+}$ ion irradiated, and hydrogenated graphene.

cond-mat.mes-hall↗

arXiv2020

Collapse of the vacuum in hexagonal graphene quantum dots: a comparative study between the tight-binding and the mean-field Hubbard models

In this paper, we perform a systematic study on the electronic, magnetic, and transport properties of the hexagonal graphene quantum dots (GQDs) with armchair edges in the presence of a charged impurity using two different configurations: (1) a central Coulomb potential and (2) a positively charged carbon vacancy. The tight binding (TB) and the half-filled extended Hubbard models are numerically solved and compared with each other in order to reveal the effect of electron interactions and system sizes. Numerical results point out that off-site Coulomb repulsion leads to an increase in the critical coupling constant to $β_{\text{c}}$ = 0.6 for a central Coulomb potential. This critical value of the $β$ is found to be independent of GQD size, reflecting its universality even in the presence of electron-electron interactions. In addition, a sudden downshift in the transmission peaks shows a clear signature of the transition from subcritical $β$ $<$ $β_{\text{c}}$ to supercritical $β$ $>$ $β_{\text{c}}$ regime. On the other hand, for a positively charged vacancy, the collapse of the lowest bound state occurs at $β_{\text{c}}$ = 0.7 for the interacting case. Interestingly, the local magnetic moment, induced by a bare carbon vacancy, is totally quenched when the vacancy is subcritically charged, whereas the valley splittings in electron and hole channels continue to exist in both regimes.

cond-mat.mes-hall↗