arXiv subjects

Muthumalai Karuppasamy

Publications and source records attributed to Muthumalai Karuppasamy.

2 recordsLinked to original sources

arXiv2026

Magnetic switching of exciton lifetime in CrSBr

Exciton dynamics in layered magnetic semiconductors provide a sensitive probe of the interplay between spin order and light-matter interaction. Here, we study thin CrSBr layers using time-resolved photoluminescence spectroscopy in an external magnetic field, revealing a step-like reduction in the exciton lifetime from 11 to 7 ps, during the magnetization flip from the antiferromagnetic to the ferromagnetic phase. The reduction of the exciton lifetime in the ferromagnetic phase persists below the Néel temperature, as evidenced by its strong magnetic-field dependence that disappears in the paramagnetic phase. Ab initio calculations reveal a one-dimensional nature of free excitons accompanied by a pronounced change in the oscillator strength across the magnetic phase transition predicting a shorter radiative lifetime of free excitons in the antiferromagnetic phase of CrSBr contradicting the experimental observations. This discrepancy is explained by strong localization of excitons at low tempature. We show both experimentally and theoretically that the observed magnetic switching of the exciton lifetime is attributed to a larger exciton localization volume leading to a larger oscillator strength in the ferromagnetic phase. The results show that disorder-induced localization effects play a key role in exciton dynamics in CrSBr.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, we report and quantify the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide which has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. Our findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of two-dimensional materials to pave the way for the development of innovative spin-based devices and future technological applications.

cond-mat.mes-hall↗