arXiv subjects

Myles A. Steiner

Publications and source records attributed to Myles A. Steiner.

18 recordsLinked to original sources

arXiv2025

Empirical Thermophotovoltaic Performance Predictions and Limits

Significant progress has been made in the field of thermophotovoltaics, with efficiency recently rising to over 40% due to improvements in cell design and material quality, higher emitter temperatures, and better spectral management. However, inconsistencies in trends for efficiency with semiconductor bandgap energy across various temperatures pose challenges in predicting optimal bandgaps or expected performance for different applications. To address these issues, here we present realistic performance predictions for various types of single-junction cells over a broad range of emitter temperatures using an empirical model based on past cell measurements. Our model is validated using data from different authors with various bandgaps and emitter temperatures, and an excellent agreement is seen between the model and the experimental data. Using our model, we show that in addition to spectral losses, it is important to consider practical electrical losses associated with series resistance and cell quality to avoid overestimation of system efficiency. We also show the effect of modifying various system parameters such as bandgap, above and below-bandgap reflectance, saturation current, and series resistance on the efficiency and power density of thermophotovoltaics at different temperatures. Finally, we predict the bandgap energies for best performance over a range of emitter temperatures for different cell material qualities.

physics.app-ph↗

arXiv2024

Suppression of Phase Separation in AlGaInAs Compositionally Graded Buffers for 1550 nm Photovoltaic Converters on GaAs

We investigate strategies to suppress phase separation and reduce threading dislocation densities (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) towards the (111)A plane and Zn-doping instead of Si-doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a (411)A GaAs substrate using a Zn-doped AlGaInAs CGB with TDD = 3.5 +/- 0.2 x 106 cm^-2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar spectrum. We characterized this device under high-intensity irradiance from a 1570 nm laser and measured a 31.9% peak efficiency laser power conversion efficiency at 3.6 W/cm2. These results provide a roadmap to the manufacture of laser- and thermal-power conversion devices with the performance and cost-effectiveness needed to drive adoption of these technologies at scale.

physics.app-ph↗

arXiv2024

Large Area Near-Field Thermophotovoltaics for Low Temperature Applications

Thermophotovoltaics, devices that convert thermal infrared photons to electricity, offer a key pathway for a variety of critical renewable energy technologies including thermal energy storage, waste heat recovery, and direct solar-thermal power generation. However, conventional far-field devices struggle to generate reasonable powers at lower temperatures. Near-field thermophotovoltaics provide a pathway to substantially higher powers by leveraging photon tunneling effects. Here we present a large area near-field thermophotovoltaic device, created with an epitaxial co-fabrication approach, that consists of a self-supported 0.28 cm2 emitter-cell pair with a 150 nm gap. The device generates 1.22 mW at 460 C, a twenty-five-fold increase over the same cell measured in a far-field configuration. Furthermore, the near-field device demonstrates short circuit current densities greater than the far-field photocurrent limit at all the temperatures tested, confirming the role of photon tunneling effects in the performance enhancement. Modeling suggests several practical directions for cell improvements and further increases in power density. These results highlight the promise of near-field thermophotovoltaics, especially for low temperature applications.

cond-mat.mtrl-sci↗

arXiv2023

Sub-0.6 eV Inverted Metamorphic GaInAs Cells Grown on InP and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

We present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. The compositionally graded buffers in these devices have threading dislocation densities of 1.3x10^6 cm^-2 and 8.9x10^6 cm^-2 on InP and GaAs, respectively. The devices generate open-circuit voltages of 0.386 V and 0.383 V, respectively, at a current density of ~10 A/cm^2, yielding bandgap-voltage offsets of 0.20 and 0.21 V. We measured their broadband reflectance and used it to estimate thermophotovoltaic efficiency. The InP-based cell is estimated to yield 1.09 W/cm^2 at 1100 degrees C vs. 0.92 W/cm^2 for the GaAs-based cell, with efficiencies of 16.8 vs. 9.2%. The efficiencies of both devices are limited by sub-bandgap absorption, with power weighted sub-bandgap reflectances of 81% and 58%, respectively, which we assess largely occurs in the graded buffers. We estimate that the thermophotovoltaic efficiencies would peak at ~1100 degrees C at 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0-2.3 micron atmospheric window. We estimate peak LPC efficiencies of 36.8% and 32.5% under 2.0 micron irradiances of 1.86 W/cm^2 and 2.81 W/cm^2, respectively.

physics.app-ph↗

arXiv2022

Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates

Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer reuse, both of which are critical for III-V solar cell viability in a terrestrial market. Here, we remove rigidly-bonded, lattice-matched, 16 mm$^2$ x 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocused Nd:YAG laser pulse. The pulse is selectively absorbed in a lower-bandgap, lattice-matched, crystalline layer below the device, driving a quasi-two dimensional ablation event that ejects the crystalline multilayer from the substrate. After minutes of selective wet-chemical etching and front contact deposition, our champion 0.1 cm$^2$ device showed a (17.4 +/- 0.5) % power conversion efficiency and an open-circuit voltage of 1.07 V, using AM1.5 direct (1000 W m$^{-2}$) with no anti-reflection coating. We show that the performance is comparable to similar solar cells produced via conventional substrate dissolution processes. We discuss unique process characteristics and opportunities, such as the potential to separate wafer-sized thin film solar cells per laser pulse.

cond-mat.mtrl-sci↗

arXiv2022

Efficient and Scalable GaInAs Thermophotovoltaic Devices

Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs / 0.74-eV GaInAs device illustrate this promise.

physics.app-ph↗

arXiv2022

Identifying optimal photovoltaic technologies for underwater applications

Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct access to water and therefore circumvents the need for field testing during initial trials of development. Employing LEDs to simulate underwater solar spectra at various depths, we compare Si and CdTe solar cells, two commercially available technologies, with GaInP cells, a technology with a wide band gap close to ideal for underwater solar harvesting. We use this method to show that while Si cells outperform both CdTe and GaInP under terrestrial AM1.5G solar irradiance, both CdTe and GaInP outperform Si at depths > 2 m, with GaInP cells operating with underwater efficiencies exceeding 51%.

physics.app-ph↗

arXiv2022

Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. These high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the global and space spectra, respectively, which are higher than previous record six-junction devices.

physics.app-ph↗

arXiv2022

Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals

Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trapping while being more robust under angle and thickness variations than simple photonic crystals. Here we experimentally demonstrate a light-trapping solution based on quasi-random photonic crystals fabricated by polymer blend lithography. We control the average lattice parameter by modifying the spin-coating speed. We demonstrate an ultrathin GaAs cell of 260 nm with a rear quasi-random pattern with submicron features, and a Jsc =26.4 mA/cm2 and an efficiency of 22.35% under the global solar spectrum.

physics.app-ph↗

arXiv2021

Semiconductor-Dielectric-Metal Solar Absorbers with High Spectral Selectivity

An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emission losses. Here, we model, fabricate, and characterize a highly selective semiconductor-dielectric-metal (Ga0.46In0.54As - MgF2 - Ag) solar absorber with an extremely sharp transition from high to low absorptance. The thin semiconductor serves as a selective filter, absorbing photons with wavelengths shorter than the bandgap and transmitting those with longer wavelengths. The highly reflective dielectric-metal rear mirror allows the structure to have very low emittance for longer wavelengths. These characteristics provide the absorber with a measured solar absorptance >91% below the bandgap wavelength and infrared emittance <5% at 100 C above the bandgap wavelength. This transition wavelength can be tuned by modifying the semiconductor composition, and modeling indicates that the absorber's optical properties should be stable at high temperatures, making the structure a good candidate for unconcentrated to highly concentrated solar thermal energy conversion.

physics.optics↗

arXiv2021

Thermophotovoltaic Efficiency of 40%

We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junction devices comprising high-quality III-V materials with band gaps between 1.0 and 1.4 eV that are optimized for high emitter temperatures of 1900-2400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using high-reflectivity back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 +/- 1)% operating at a power density of 2.39 W/cm2 under an irradiance of 30.4 W/cm2 and emitter temperature of 2400°C. A 1.2/1.0 device reached a maximum efficiency of (39.3 +/- 1)% operating at a power density of 1.8 W/cm2 under an irradiance of 20.1 W/cm2 and emitter temperature of 2127°C. These cells can be integrated into a TPV system for thermal energy grid storage (TEGS) to enable dispatchable renewable energy. These new TPV cells enable a pathway for TEGS to reach sufficiently high efficiency and sufficiently low cost to enable full decarbonization of the grid. Furthermore, the high demonstrated efficiency also gives TPV the potential to compete with turbine-based heat engines for large-scale power production with respect to both cost and performance, thereby enabling possible usage in natural gas or hydrogen-fueled electricity production.

physics.app-ph↗

arXiv2021

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

physics.app-ph↗

arXiv2021

Engineering the reciprocal space for ultrathin GaAs solar cells

III-V solar cells dominate the high efficiency charts, but with significantly higher cost than other solar cells. Ultrathin III-V solar cells can exhibit lower production costs and immunity to short carrier diffusion lengths caused by radiation damage, dislocations, or native defects. Nevertheless, solving the incomplete optical absorption of sub-micron layers presents a challenge for light-trapping structures. Simple photonic crystals have high diffractive efficiencies, which are excellent for narrow-band applications. Random structures a broadband response instead but suffer from low diffraction efficiencies. Quasirandom (hyperuniform) structures lie in between providing high diffractive efficiency over a target wavelength range, broader than simple photonic crystals, but narrower than a random structure. In this work, we present a design method to evolve a simple photonic crystal into a quasirandom structure by modifying the spatial-Fourier space in a controlled manner. We apply these structures to an ultrathin GaAs solar cell of only 100 nm. We predict a photocurrent for the tested quasirandom structure of 25.3 mA/cm$^2$, while a planar structure would be limited to 16.1 mA/cm$^2$. The modified spatial-Fourier space in the quasirandom structure increases the amount of resonances, with a progression from discrete number of peaks to a continuum in the absorption. The enhancement in photocurrent is stable under angle variations because of this continuum. We also explore the robustness against changes in the real-space distribution of the quasirandom structures using different numerical seeds, simulating variations in a self-assembly method.

physics.optics↗

arXiv2020

Solar Thermoradiative-Photovoltaic Energy Conversion

We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems.

physics.app-ph↗

arXiv2018

Thermal Energy Grid Storage Using Multijunction Photovoltaics

As the cost of renewable energy falls below fossil fuels, the most important challenge to enable widespread sustainable power generation has become making renewables dispatchable. Low cost energy storage can provide this dispatchability, but there is no clear technology that can meet the need. Pumped hydroelectric and compressed air storage have low costs, but they are geographically constrained. Similarly, lithium-ion batteries are becoming ubiquitous, but even their lower bounding asymptote cost is too high to enable cost-competitive dispatchable renewables. Here, we introduce a concept based on thermal energy grid storage (TEGS) using a multijunction photovoltaic heat engine (MPV) with promising initial experimental results that could meet the low cost required to enable cost competitive dispatchable renewables. The approach exploits an important tradeoff between the accession of an extremely low cost per unit energy stored, by storing heat instead of electricity directly, while paying the penalty of a lower round trip efficiency. To understand why this tradeoff is advantageous, we first introduce a framework for evaluating storage technologies that treats round trip efficiency (RTE) as a variable, in addition to cost per unit energy stored (CPE) and cost per unit power (CPP). It is from this perspective that the TEGS-MPV concept offers a compelling economic proposition.

physics.app-ph↗

arXiv2016

Self Duality and a possible Hall-insulator phase near the superconductor-to-insulator transition in two-dimensional indium-oxide films

We combine measurements of the longitudinal ($ρ_{xx}$) and Hall ($ρ_{xy}$) resistivities of disordered two dimensional amorphous indium-oxide films to study the magnetic-field tuned superconductor to insulator transition (H-SIT) in the $T \to 0$ limit. At the critical field, $H_c$, the full resistivity tensor is $T$ independent with $ρ_{xx}(H_c) = h/4e^2$ and $ρ_{xy}(H_c)=0$ within experimental uncertainty in all films (i.e. these appear to be "universal" values), this is strongly suggestive that there is a particle-vortex self-duality at $H=H_c$. The transition separates the (presumably) superconducting state at $H H_c$, at which the Hall resistance is $T$ independent and roughly equal to its classical value, $ρ_{xy}\approx H/nec$, marks an additional crossover to a highfield regime (probably to a Fermi-insulator) in which $ρ_{xy} > H/nec$ and possibly diverges as $T\to 0$. We also highlight a profound analogy between the H-SIT and quantum-Hall liquid to insulator transitions (QHIT).

cond-mat.supr-con↗

arXiv2015

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100$^{\circ}$C to 350$^{\circ}$C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 $Ω$cm$^2$ for samples bonded at 200$^{\circ}$C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga$_{0.5}$In$_{0.5}$P/Si tandem solar cells operating at one sun or low concentration conditions.

cond-mat.mtrl-sci↗

arXiv2007

The approach to a superconductor-to-Bose-insulator transition in disordered films

Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches $R_Q = h/4e^2$ and the scaling of the resistance is consistent with quantum percolation, and therefore with the predictions of the dirty boson model.

cond-mat.supr-con↗