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Myriam Rihani

Publications and source records attributed to Myriam Rihani.

3 recordsLinked to original sources

Cryogenic nonlinear processes in thin-film lithium niobate

Photonic integrated circuits operating at cryogenic temperatures are necessary for many quantum technologies such as quantum transduction, integrated single-photon emitters and detectors, as well as deep-space communication and sensing devices. Thin-film lithium niobate (TFLN) is an emerging platform that is a strong candidate for fully integrated quantum photonics, offering low loss, fast electro-optic reconfigurability, nonlinear quantum light sources, and the ability to host quantum emitters and single-photon detectors. To interface TFLN with technologies that require cryogenic operation, like superconducting single-photon detectors, microwave-to-optical transducers, and solid-state quantum emitters, it is important to study its optical and electrical properties from room temperature down to cryogenic temperatures. Here, we investigate linear and nonlinear photonic devices, including racetrack resonators, Mach-Zehnder modulators and periodically poled waveguides in TFLN using a cryogenic fiber probe station with full temperature control down to 5 K. We quantify a shift in resonances, a 22% increase in electro-optic modulator half-wave voltage, a blue shift of 18 nm for Type-0 phase-matching as well as a red shift of 64 nm for Type-II phase-matching as the sample temperature decreases. Our study of nonlinear processes in a cryogenic environment will contribute towards developing novel devices for inter-platform quantum information processing, secure communication, and enhanced sensing.

physics.optics

Trap-dependent current suppression of optically excited III-V nanowires at cryogenic temperatures

The advancement of quantum technology networks necessitates high-speed, low-thermal load, and minimal-noise communication links between cryogenic and room-temperature components. At the heart of modern telecommunication, lay optical interconnects allowing for large data transfer capabilities via optical fibers. However, cryogenic photonic technologies remain largely unexplored and require a detailed understanding of material behavior and defect dynamics at low temperatures. In this work, we present the first comprehensive study of integrated III-V heterostructures operating at cryogenic temperatures down to 5K. Using an integrated n-InP/i-InGaAs/p-InP/p-InGaAs stack monolithically grown on silicon, we identify a temperature-dependent current-lowering mechanism arising from trap states becoming increasingly active below 140K. We demonstrate for the first time that these traps can be equivalently excited and controlled through either thermal or optical energy, revealing a dual modulation mechanism. These findings provide new insights into carrier transport and defect behavior in III-V heterostructures at cryogenic temperatures, advancing the field of cryogenic photonics and offering a non-destructive approach for identifying and characterizing material impurities in integrated quantum and optoelectronic devices.

physics.optics

High-temperature growth of ultra thin NbTiN films on lithium niobate for integrated single photon detection

Lithium niobate-on-insulator (LNOI) is an emerging photonic platform with high potential for scalable quantum information processing due to its strong second-order nonlinearity. However, little progress has been made in developing on-chip single-photon detectors on LNOI. Niobium titanium nitride (NbTiN) superconducting nanowire single-photon detectors (SNSPDs) are a promising candidate for this application. In this work, we use DC reactive magnetron sputtering to grow high-quality NbTiN thin films using an ultra-high vacuum deposition system with a base pressure lower than $2\times 10^{-10}$ mbar. Enabled by the low concentration of background impurities in this system, we investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature ($T_{c}$) of 12.3 K grown at a substrate temperature of 825 K. We find that the NbTiN films grow in the (111) orientation and evolve from a porous pillar structure when grown at low temperatures to densely packed fibrous grains at higher temperatures. Furthermore, we demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LNOI platform and investigate the obtained interface quality. Lastly, we fabricate SNSPDs from the NbTiN film on LNOI and characterize the detector performance.

cond-mat.supr-con