arXiv subjects

Myung-Ho Bae

Publications and source records attributed to Myung-Ho Bae.

At least 19 recordsLinked to original sources

arXiv2026

Non-magnetic spin splitting driven by spin-valley-layer coupling in multilayer WSe2

Transition metal dichalcogenides provide a platform for exploring spin-valley physics, offering a promising approach to electric-field-driven spin control for low-power spintronic and quantum devices. Here, we demonstrate electric-field-induced spin splitting in the Q and Q' valleys of multilayer n-type WSe2 using quantum-point-contact spectroscopy. Systematic modulations in four distinct conductance quantization steps, providing direct evidence of spin-valley-layer coupling-driven spin-resolved density of states, are achieved by tuning the out-of-plane gate voltage. Notably, the electric-field-induced spin splitting significantly dominate the magnetic-field-induced valley-Zeeman effect (i.e., ~7 meV for a displacement field change of ~0.08 V/nm vs. ~2 meV for a magnetic field of B = 9 T), demonstrating a powerful, non-magnetic manipulation of spin states. This ability to manipulate spin states by gate voltage is crucial for advancing next-generation low-power spintronic and quantum information technologies.

cond-mat.mes-hall↗

arXiv2025

Method for rapid estimation of the energy-time covariance matrix of single electrons

The ability to emit and control single electrons in a dynamical manner enables their use in electron quantum optics and sensing. To characterize the electron states emitted with energy far above the Fermi energy, a dynamic barrier has been used. In this work, we extract the energy-time covariance matrix of single electrons by analyzing the energy variance obtained from the transconductance through the dynamic barrier. This method enables efficient and precise characterization of electron states, especially when a sinusoidal waveform is used. An effective phase-space area and the elliptical distribution are constructed from the covariance matrix and qualitatively compared with the distribution reconstructed from a tomographic method. The area constrained by the uncertainty relation serves as a measure of proximity to the quantum limit. Our results demonstrate an efficient method for characterizing electron states, paving the way for their application in quantum technologies.

cond-mat.mes-hall↗

arXiv2019

Genuine Ohmic van der Waals contact between indium and MoS2

The formation of an ideal van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces is a critical step for the development of high-performance and energy-efficient electronic and optoelectronic applications based on the two-dimensional (2D) semiconductors. In overcoming the key chal-lenges of the conventional metal deposition process that leads to an uncontrol-lable Schottky barrier height and high contact resistance, notable advances were recently made by transferring atomically flat metal thin films or thermally evapo-rating indium/gold alloy. However, the realization of an ideal vdW contact be-tween an elemental metal and TMDC through the evaporation process is yet to be demonstrated, and particularly the evidence of an Ohmic contact between three-dimensional metallic electrodes and TMDCs is still unavailable. Herein, we report the fabrication of atomically clean metal/TMDC contacts by evaporating metals at a relatively low thermal energy and subsequently cooling the substrate holder down to 100 K by liquid nitrogen, achieving for the indium (In)/molybdenum disulfide (MoS2) case an accumulation-type Ohmic contact with a metal-induced electron doping density of 10$^{12}$/cm$^2$. We find that the transport at the In/MoS2 contact is dominated by the field-emission mechanism over a wide temperature range from 2.4 to 300 K, and the contact resistance reaches 600 Ohm um and 1,000 Ohm um at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Based on first-principles calculations, we find that the na-ture of the ideal In/MoS2 vdW contact is characterized by the formation of in-gap states within TMDC together with the abrupt and rigid shift of the TMDC band.

cond-mat.mes-hall↗

arXiv2019

Evidence for universality of tunable-barrier electron pumps

We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported measurements of the pump current with relative total uncertainties around $10^{-6}$ or less. Combined with theoretical models of electron capture by the pumps, these experimental data exhibits encouraging evidence that the pumps operate according to a universal mechanism, independent of the details of device design. Evidence for robustness of the pump current against changes in the control parameters is at a more preliminary stage, but also encouraging, with two studies reporting robustness of the pump current against three or more parameters in the range of $\sim\!5 \times 10^{-7}$ to $\sim\!2 \times 10^{-6}$. This review highlights the need for an agreed protocol for tuning the electron pump for optimal operation, as well as more rigorous evaluations of the robustness in a wide range of pump designs.

cond-mat.mes-hall↗

arXiv2019

Energy dissipation in van der Waals two-dimensional devices

Understanding the physics underlying energy dissipation is necessary for the effective thermal management of devices based on two-dimensional (2D) materials and requires insights into the interplay between heat generation and diffusion in such materials. We review the microscopic mechanisms that govern Joule heating and energy dissipation processes in 2D materials such as graphene, black phosphorus and semiconducting transition metal dichalcogenides. We discuss the processes through which non-equilibrium charge carriers, created either transiently through photoexcitation or at steady state by a large electric field, undergo energy relaxation with the lattice and the substrate We also discuss how these energy dissipation processes are affected by the device configuration (heterostructure, substrate material including hexagonal boron nitride, etc) as the use of different substrates, encapsulation, disorder, etc can introduce or remove scattering processes that change the energy relaxation pathways. Finally, we discuss how the unique carrier scattering dynamics in graphene-based vdW heterostructures can be exploited for optoelectronic applications in light emission and photodetection.

cond-mat.mes-hall↗

arXiv2018

Thermal Transport Across Graphene Step Junctions

Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to 9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device reveal that graphene layers are relatively decoupled, and the low thermal conductance of the device is determined by the resistance between the two dis-tinct graphene layers. In these conditions the junction plays a negligible effect. To prove that the decoupling between layers controls thermal transport in the junction, the heat flow in both directions was measured, showing no evidence of thermal asymmetry or rectification (within experimental error bars). For large-area graphene applications, this signifies that small bilayer (or multilayer) islands have little or no contribution to overall thermal transport.

cond-mat.mes-hall↗

arXiv2017

Transport spectroscopy for Paschen-Back splitting of Landau levels in InAs nanowires

The coupling of electron orbital motion and spin leads to nontrivial changes in energy-level structures, leading to various spectroscopies and applications. In atoms, such spin-orbit coupling (SOC) causes anomalous Zeeman splitting, known as the Paschen-Back (PB) effect, in the pres-ence of a strong magnetic field. In solids, SOC generates energy-band inversion or splitting, a prerequisite for topological phases or Majorana fermions, at zero or weak magnetic fields. Here, we present the first observation of PB splitting of Landau levels (LLs) in indium arsenide nan-owires in a strong-field regime. Our energy-resolved transport spectroscopy results indicated the presence of LL-dependent anomalous Zeeman splitting in these nanowires, analogous to the atomic PB effect. This result was found to be in good agreement with a theoretical analysis based on Rashba SOC. Our findings also suggested a way of generating spin-resolved electron transport in nanowires.

cond-mat.mes-hall↗

arXiv2017

Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices

Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially resolved Raman thermometry on an electrically biased graphene channel and its hBN substrate to study the energy dissipation mechanism in graphene/hBN heterostructures. By comparing the temperature profile along the biased graphene channel with that along the hBN substrate, we found that the thermal boundary resistance between the graphene and hBN was in the range of (1-2) x 10^(-7) m^(2) KW^(-1) from ~100 C to the onset of graphene break-down at ~600 C in air. Consideration of an electro-thermal transport model together with the Raman thermometry conducted in air showed that local doping occurred under a strong electric field played a crucial role in the energy dissipation of the graphene/hBN device up to T ~ 600 C.

cond-mat.mes-hall↗

arXiv2017

Ultrafast Graphene Light Emitter

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

cond-mat.mes-hall↗

arXiv2017

Bright visible light emission from graphene

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of state-of-the-art photodetectors, optical modulators, and plasmonic devices. In addition, electrically biased graphene on SiO2 substrates can be used as a low-efficiency emitter in the mid-infrared range. However, emission in the visible range has remained elusive. Here we report the observation of bright visible-light emission from electrically biased suspended graphenes. In these devices, heat transport is greatly minimised; thus hot electrons (~ 2800 K) become spatially localised at the centre of graphene layer, resulting in a 1000-fold enhancement in the thermal radiation efficiency. Moreover, strong optical interference between the suspended graphene and substrate can be utilized to tune the emission spectrum. We also demonstrate the scalability of this technique by realizing arrays of chemical-vapour-deposited graphene bright visible-light emitters. These results pave the way towards the realisation of commercially viable large-scale, atomically-thin, flexible and transparent light emitters and displays with low-operation voltage, and graphene-based, on-chip ultrafast optical communications.

cond-mat.mes-hall↗

arXiv2016

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique, called voltage-modulated thermoreflectance (VMTR), to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG=0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1 . We propose two possible explanations for the observed ΔG. First, since the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces un-der electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; i.e., only <2 % of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of 4x10^12 cm-2.

cond-mat.mes-hall↗

arXiv2014

Substrate-supported thermometry platform for nanomaterials like graphene, nanotubes, and nanowires

We demonstrate a substrate-supported thermometry platform to measure thermal conduction in nanomaterials like graphene, with no need to suspend them. We use three-dimensional simulations and careful uncertainty analysis to optimize the platform geometry and to obtain the sample thermal conductivity. The lowest thermal sheet conductance that can be sensed with <50% error is ~25 nW/K at room temperature, indicating applicability of this platform to graphene or polymer thin films, nanotube or nanowire arrays, even a single Si nanowire. The platform can also be extended to plastic substrates, and could find wide applicability in circumstances where fabrication challenges and low yield associated with suspended platforms must be avoided.

cond-mat.mtrl-sci↗

arXiv2014

Quantum coherence and population transfer in a driven cascade three-level artificial atom

We present an experimental investigation on the spectral characteristics of an artificial atom "transmon qubit" constituting a three-level cascade system (Ξ-system) in the presence of a pair of external driving fields. We observe two different types of Autler-Townes (AT) splitting: type I, where the phenomenon of two-photon resonance tends to diminish as the coupling field strength increases, and type II, where this phenomenon mostly stays constant. We find that the types are determined by the cooperative effect of the decay rates and the field strengths. Theoretically analyzing the density-matrix elements in the weak-field limit where the AT effect is suppressed, we single out events of pure two-photon coherence occurring owing to constructive quantum interference.

cond-mat.supr-con↗

arXiv2013

Ballistic to diffusive crossover of heat flow in graphene ribbons

Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the phonon mean free path (mfp). Here, we find that short, quarter-micron graphene samples reach ~35% of the ballistic heat conductance limit up to room temperature, enabled by the relatively large phonon mfp (~100 nm) in substrate-supported graphene. In contrast, patterning similar samples into nanoribbons (GNRs) leads to a diffusive heat flow regime that is controlled by ribbon width and edge disorder. In the edge-controlled regime, the GNR thermal conductivity scales with width approximately as ~W^{1.8+/-0.3}, being about 100 W/m/K in 65-nm-wide GNRs, at room temperature. Manipulation of device dimensions on the scale of the phonon mfp can be used to achieve full control of their heat-carrying properties, approaching fundamentally limited upper or lower bounds.

cond-mat.mes-hall↗

arXiv2012

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to 15%. Heating effects are reduced if the supporting insulator is thinned, or in shorter channel devices by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of ~30-300 ns, dominated by the thickness of the supporting insulator and that of device capping layers (a behavior also expected in ultrathin body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors.

cond-mat.mes-hall↗

arXiv2012

Transport Measurement of Andreev Bound States in a Kondo-Correlated Quantum Dot

We report transport measurements of gate-tunable Andreev bound states in a carbon nanotube quantum dot coupled to two superconducting leads. In particular, we observe clear features of two types of Kondo ridges, which can be understood in terms of the interplay between the Kondo effect and superconductivity. In the first type (type I), the coupling is strong and the Kondo effect is dominant. Levels of the Andreev bound states display anti-crossing in the middle of the ridge. On the other hand, crossing of the two Andreev bound states is shown in the second type (type II) together with the 0-$π$ transition of the Josephson junction. Our scenario is well understood in terms of only a single dimensionless parameter, $k_BT_K^{min}/Δ$, where $T_K^{min}$ and $Δ$ are the minimum Kondo temperature of a ridge and the superconducting order parameter, respectively. Our observation is consistent with measurements of the critical current, and is supported by numerical renormalization group calculations.

cond-mat.mes-hall↗

arXiv2012

Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm2/V/s, comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ~2 x 10^9 A/cm2, the highest reported for nanoscale CVD graphene interconnects. At temperatures below ~5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.

cond-mat.mes-hall↗

arXiv2011

Microwave Enhancement of Phase Slip Rate in Quasi One-Dimensional Superconducting Nanowires

We study current-voltage (V-I) characteristics of short superconducting nanowires of length ~ 100 nm exposed to microwave radiation of frequencies between 100 MHz and 15 GHz. The radiation causes a decrease of the average switching current of the wire. This suppression of the switching current is modeled assuming that there is one-to-one correspondence between Little's phase slips and the experimentally observed switching events. At some critical power P* of the radiation a dissipative dynamic superconducting state occurs as an extra step on the V-I curve. It is identified as a phase slip center (PSC). With the dependence of the switching currents and the standard deviations observed at the transitions (i) from a constant supercurrent state to a normal state and (ii) from a constant superconducting state to a PSC state, we conclude that both of the two types of the switching events are triggered by the same microscopic event, namely a single Little's phase slip. We show that the Skocpol-Beasely-Tinkham model is not applicable to our microwave-driven phase slip centers, since it leads to an unphysical small estimated value of the size of the dissipative core of the PSC. Through the analysis of the witching current distributions at a sufficiently low temperature, we also present evidence that the quantum phase slip play a role in switching events under microwaves.

cond-mat.supr-con↗