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N. A. Bogoslovskiy

Publications and source records attributed to N. A. Bogoslovskiy.

3 recordsLinked to original sources

Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach

We present a theoretical study of the exchange interaction in a system of spatially disordered magnetic moments. A typical example of such a system is an impurity semiconductor, whose magnetic properties are associated with the exchange interaction of the impurity atoms. In this study, we consider the case of antiferromagnetic exchange interaction, which we describe by the Heisenberg Hamiltonian. To calculate the magnetic properties of the disordered system, we employ the density of states method. Our calculations demonstrate a good quantitative agreement with the dependence of the Si:P magnetic susceptibility on temperature in a wide range of impurity concentrations and temperatures.

cond-mat.str-el↗

Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism

We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states approach, we analytically obtain the magnetic susceptibility and heat capacity over a wide range of temperatures and magnetic fields. It is shown that the finite system of spins in magnetic field less than a certain critical field is in a superparamagnetic state due to thermodynamic fluctuations. The complex phase structure of a ferromagnetic semiconductor is discussed.

cond-mat.str-el↗

Two components of donor-acceptor recombination in compensated semiconductors. Analytical model of spectra in presence of electrostatic fluctuations

We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged impurities which are important in non zero compensation case. We show that the donor-acceptor optical spectrum can be described as a sum of two components: monomolecular and bimolecular. In the low compensation limit we develop two analytical models for both types of the recombination. Also our numerical simulation predicts that these two components of the photoluminescence spectra can be resolved under certain experimental conditions.

cond-mat.mes-hall↗