SearcharxivSearch

arXiv subjects

N. Alem

Publications and source records attributed to N. Alem.

2 recordsLinked to original sources

Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$

Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.

cond-mat.mtrl-sci

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

cond-mat.mes-hall