arXiv subjects

N. C. Bristowe

Publications and source records attributed to N. C. Bristowe.

9 recordsLinked to original sources

arXiv2026

Hidden Magnetic Octupolar Order driven by Spin-Orbit coupling in KFeF$_3$

Phase transitions are typically driven by symmetry-breaking structural distortions that lift electronic degeneracies, yet in some cases, these transitions may be driven by a hidden order without conventional structural signatures. Here, we demonstrate that the 3$d$ perovskite, KFeF$_3$, hosts such a hidden instability. Using a combination of high-resolution powder diffraction, magnetometry, symmetry-based analysis and first principles calculations, we reveal that while the 90 K cubic to rhombohedral transition arises from conventional magnetostriction accompanying antiferromagnetic order, a second transition at 40 K lowers the symmetry to monoclinic without any detectable Jahn-Teller distortion or translational symmetry-breaking. Symmetry-based Landau analysis supports a hidden zone centered magnetic octupole order parameter, whose improper coupling accounts for the weak ferromagnetism and pronounced symmetry-breaking strain. Density functional calculations show that spin-orbit coupling suppresses the competing Jahn-Teller instability, and thereby favors higher rank magnetic multipolar degrees of freedom. These findings establish KFeF$_3$ as a model system in which the competing energy scales between spin-orbit coupling and orbital degeneracy result in the emergence of hidden, multipolar order. We show that the control of such magnetic, multipolar order could, in principle, provide a route to induce altermagnetism.

cond-mat.str-el↗

arXiv2025

Goldstone-mediated polar instability in hexagonal barium titanate

We discover a rare structural manifestation of the Goldstone paradigm in a hexagonal polytype of the archetypal ferroelectric BaTiO3. First-principles calculations confirm the Goldstone character of the order parameter, and high-resolution diffraction measurements link this to a quasi-continuous domain texture in the vicinity of the low-temperature phase transitions. Our findings highlight how changes in structural topology may be exploited to realize rich polar topologies in bulk ferroelectric perovskites.

cond-mat.mtrl-sci↗

arXiv2019

Spin interactions and magnetic order in the iron oxychalcogenides BaFe2Q2O

The ability to tune the iron chalcogenides BaFe2Q3 from Mott insulators, to metals and then superconductors with applied pressure has renewed interest in low-dimensional iron chalcogenides and oxychalcogenides. We report here a combined experimental and theoretical study on the iron oxychalcogenides BaFe2Q2O (Q=S, Se) and show that their magnetic behaviour results from nearest-neighbour magnetic exchange interactions via oxide and selenide anions of similar strength, with properties consistent with more localised electronic structures than those of BaFe2Q3 systems.

cond-mat.str-el↗

arXiv2012

One-dimensional half-metallic interfaces of two-dimensional honeycomb insulators

We study zigzag interfaces between insulating compounds that are isostructural to graphene, specifically II-VI, III-V and IV-IV two-dimensional (2D) honeycomb insulators. We show that these one-dimensional interfaces are polar, with a net density of excess charge that can be simply determined by using the ideal (integer) formal valence charges, regardless of the predominant covalent character of the bonding in these materials. We justify this finding on fundamental physical grounds, by analyzing the topology of the formal polarization lattice in the parent bulk materials. First principles calculations elucidate an electronic compensation mechanism not dissimilar to oxide interfaces, which is triggered by a Zener-like charge transfer between interfaces of opposite polarity. In particular, we predict the emergence of one dimensional electron and hole gases (1DEG), which in some cases are ferromagnetic half-metallic.

cond-mat.mes-hall↗

arXiv2012

Electrochemical ferroelectric switching: The origin of polarization reversal in ultrathin films

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show that the system does not polarize unless charged defects or adsorbates form at the surface. We propose electrochemical processes as the most likely origin of this charge. The ferroelectric polarization of the film adapts to the bound charge generated on its surface by redox processes when poling the film. This, in turn, alters the band alignment at the bottom electrode interface, explaining the observed tunneling electroresistance. Our conclusions are supported by energetics calculated for varied electrochemical scenarios.

cond-mat.mes-hall↗

arXiv2011

Proposal of a one-dimensional electron gas in the steps at the LaAlO$_3$-SrTiO$_3$ interface

The two-dimensional electron gas (2DEG) at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has become one of the most fascinating and highly-debated oxide systems of recent times. Here we propose that a one-dimensional electron gas (1DEG) can be engineered at the step edges of the LAO/STO interface. These predictions are supported by first principles calculations and electrostatic modeling which elucidate the origin of the 1DEG as an electronic reconstruction to compensate a net surface charge in the step edge. The results suggest a novel route to increasing the functional density in these electronic interfaces.

cond-mat.mes-hall↗

arXiv2011

Surface defects and conduction in polar oxide heterostructures

The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the mobility of the interfacial two-dimensional electron gas (2DEG) is lower than desirable. Therefore to progress, the highly debated origin of the 2DEG must be understood. Here we present a case for surface redox reactions as the origin of the 2DEG, in particular surface O vacancies, using a model supported by first principles calculations that describes the redox formation. In agreement with recent spectroscopic and transport measurements, we predict a stabilization of such redox processes (and hence Ti 3$d$ occupation) with film thickness beyond a critical value, which can be smaller than the critical thickness for 2D electronic conduction, since the surface defects generate trapping potentials that will affect the interface electron mobility. Several other recent experimental results, such as lack of core level broadening and shifts, find natural explanation. Pristine systems will likely require changed growth conditions or modified materials with a higher vacancy free energy.

cond-mat.mes-hall↗

arXiv2011

The net charge at interfaces between insulators

The issue of the net charge at insulating oxide interfaces is shortly reviewed with the ambition of dispelling myths of such charges being affected by covalency and related charge density effects. For electrostatic analysis purposes, the net charge at such interfaces is defined by the counting of discrete electrons and core ion charges, and by the definition of the reference polarisation of the separate, unperturbed bulk materials. The arguments are illustrated for the case of a thin film of LaAlO$_3$ over SrTiO$_3$ in the absence of free carriers, for which the net charge is exactly 0.5$e$ per interface formula unit, if the polarisation response in both materials is referred to zero bulk values. Further consequences of the argument are extracted for structural and chemical alterations of such interfaces, in which internal rearrangements are distinguished from extrinsic alterations (changes of stoichiometry, redox processes), only the latter affecting the interfacial net charge. The arguments are reviewed alongside the proposal of Stengel and Vanderbilt [Phys. Rev. B {\bf 80}, 241103 (2009)] of using formal polarisation values instead of net interfacial charges, based on the interface theorem of Vanderbilt and King-Smith [Phys. Rev. B {\bf 48}, 4442 (1993)]. Implications for non-centrosymmetric materials are discussed, as well as for interfaces for which the charge mismatch is an integer number of polarisation quanta.

cond-mat.mtrl-sci↗

arXiv2009

Oxide superlattices with alternating p and n interfaces

The physics of oxide superlattices is considered for pristine (001) multilayers of the band insulators LaAlO3 and SrTiO3 with alternating p and n interfaces. First principles results and a model of capacitor plates offer a simple paradigm to understand their dielectric properties and the insulator to metal transition (IMT) at interfaces with increasing layer thickness. The charge at insulating interfaces is found to be as predicted from the formal ionic charges, not populations. Different relative layer thicknesses produce a spontaneous polarization of the system, and allow manipulation of the interfacial electron gas. Large piezoresistance effects can be obtained from the sensitivity of the IMT to lateral strain. Carrier densities are found to be ideal for exciton condensation.

cond-mat.mes-hall↗