arXiv subjects

N. Dontschuk

Publications and source records attributed to N. Dontschuk.

15 recordsLinked to original sources

arXiv2025

Photoelectric detection of single spins in diamond by optically controlled discharge of long-lived trap states

Electrical detection methods for solid-state spins are attractive for quantum technologies, being readily chip-scalable and not subject to the small photon budgets of single emitters. However, realising electrical spin readout in wide-bandgap materials with similar fidelity and bandwidth to optical approaches remains challenging. Here, we introduce a photoelectrical spin readout scheme that detects spin information stored long-term as trapped electrical charges. Using nitrogen-vacancy (NV) centres in diamond as a model system, spin-dependent photoionisation generates charge carriers that are stored in long-lived trap states at a diamond-metal Schottky junction. On-demand illumination of the junction under electrical bias releases stored charge, yielding a photocurrent transient proportional to the amount of trapped charge and hence spin state. Spin readout after coherent control of single NVs is demonstrated using charge readout in a protocol we call charge-capture detected magnetic resonance (CCDMR), and we use charge-based imaging to identify charge carrier generation and trapping processes. Our results establish CCDMR as a new technique for solid-state spin qubit readout, combining attaractive features of electrical detection with the stability of long-lived charge traps in wide-bandgap materials.

quant-ph↗

arXiv2024

Quantum electrometry of non-volatile space charges in diamond

The microscopic electric environment surrounding a spin defect in a wide-bandgap semiconductor plays a determining role in the spin coherence and charge stability of a given qubit and has an equally important role in defining the electrical properties of the host material. Here, we use electrometry of quantum defects embedded within a diamond to observe stable, micron-scale space charge distributions formed from trapped photogenerated charges. These space charges grow under optical illumination in the presence of an applied electric field, eventually screening the applied electric field entirely over a spatial extent of tens of microns due to charge carrier drift and capture. Our measurements suggest that these space charge fields originate from widely-dispersed spatial configurations of nitrogen charges. Our results have important consequences for electrometry and photoelectric detection using qubits in wide-bandgap semiconductors.

cond-mat.mes-hall↗

arXiv2024

3D-mapping and manipulation of photocurrent in an optoelectronic diamond device

Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies.

cond-mat.mtrl-sci↗

arXiv2022

On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond

Dense, near-surface (within 10 nm) ensembles of nitrogen-vacancy (NV) centres in diamond are rapidly moving into prominence as the workhorse of a variety of envisaged applications, ranging from the imaging of fast-fluctuating magnetic signals to the facilitation of nuclear hyperpolarisation. Unlike their bulk counterparts, near-surface ensembles suffer from charge stability issues and reduced NV formation efficiency due to the diamond surface's role as a vacancy sink during annealing and an electron sink afterwards. To this end, work is ongoing to determine the best methods for producing high-quality ensembles in this regime. Here we examine the prospects for creating such ensembles cost-effectively by implanting nitrogen-rich type Ib diamond with electron donors, aiming to exploit the high bulk nitrogen density to combat surface-induced band bending in the process. This approach has previously been successful at creating deeper ensembles, however we find that in the near-surface regime there are fewer benefits over nitrogen implantation into pure diamond substrates. Our results suggest that control over diamond surface termination during annealing is key to successfully creating high-yield near-surface NV ensembles generally, and implantation into type Ib diamond may be worth revisiting once that has been accomplished.

cond-mat.other↗

arXiv2022

Varied magnetic phases in a van der Waals easy-plane antiferromagnet revealed by nitrogen-vacancy center microscopy

Interest in van der Waals materials often stems from a desire to miniaturise existing technologies by exploiting their intrinsic layered structure to create near atomically-thin components that do not suffer from surface defects. One appealing property is easily-switchable yet robust magnetic order, a quality only sparsely demonstrated in the case of in-plane anisotropy. In this work, we use widefield nitrogen-vacancy (NV) center magnetic imaging to measure the properties of individual flakes of CuCrP$_2$S$_6$, a multiferroic van der Waals magnet known to exhibit weak easy-plane anisotropy in the bulk. We chart the crossover between in-plane ferromagnetism in thin flakes down to the trilayer, and the bulk behaviour dominated by a low-field spin-flop transition. Further, by exploiting the directional dependence of NV center magnetometry, we are able to observe an instance of a predominantly out-of-plane ferromagetic phase near zero field, in contradiction with expectation and previous experiments on the bulk material. We attribute this to the presence of surface anisotropies arising from the sample preparation process or exposure to the ambient environment, which is expected to have more general implications for a broader class of weakly anisotropic van der Waals magnets.

cond-mat.mes-hall↗

arXiv2021

An Integrated Widefield Probe for Practical Diamond Nitrogen-Vacancy Microscopy

The widefield diamond nitrogen-vacancy (NV) microscope is a powerful instrument for imaging magnetic fields. However, a key limitation impeding its wider adoption is its complex operation, in part due to the difficulty of precisely interfacing the sensor and sample to achieve optimum spatial resolution. Here we demonstrate a solution to this interfacing problem that is both practical and reliably minimizes NV-sample standoff. We built a compact widefield NV microscope which incorporates an integrated widefield diamond probe with full position and angular control, and developed a systematic alignment procedure based on optical interference fringes. Using this platform, we imaged an ultrathin (1 nm) magnetic film test sample, and conducted a detailed study of the spatial resolution. We reproducibly achieved an estimated NV-sample standoff (and hence spatial resolution) of at most $\sim2~μ$m across a $\sim0.5$ mm field of view. Guided by these results, we suggest future improvements for approaching the optical diffraction limit. This work is a step towards realizing a widefield NV microscope suitable for routine high-throughput mapping of magnetic fields.

cond-mat.mes-hall↗

arXiv2020

Improved current density and magnetisation reconstruction through vector magnetic field measurements

Stray magnetic fields contain significant information about the electronic and magnetic properties of condensed matter systems. For two-dimensional (2D) systems, stray field measurements can even allow full determination of the source quantity. For instance, a 2D map of the stray magnetic field can be uniquely transformed into the 2D current density that gave rise to the field and, under some conditions, into the equivalent 2D magnetisation. However, implementing these transformations typically requires truncation of the initial data and involves singularities that may introduce errors, artefacts, and amplify noise. Here we investigate the possibility of mitigating these issues through vector measurements. For each scenario (current reconstruction and magnetisation reconstruction) the different possible reconstruction pathways are analysed and their performances compared. In particular, we find that the simultaneous measurement of both in-plane components ($B_x$ and $B_y$) enables near-ideal reconstruction of the current density, without singularity or truncation artefacts, which constitutes a significant improvement over reconstruction based on a single component (e.g. $B_z$). On the other hand, for magnetisation reconstruction, a single measurement of the out-of-plane field ($B_z$) is generally the best choice, regardless of the magnetisation direction. We verify these findings experimentally using nitrogen-vacancy magnetometry in the case of a 2D current density and a 2D magnet with perpendicular magnetisation.

physics.app-ph↗

arXiv2020

Epitaxial growth of SiC on (100) Diamond

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced widefield quantum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays

Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter regime for this purpose, but their applicability to widefield sensing with NV ensembles remains largely unexplored. Here we fabricate and characterize closely-packed arrays of diamond nanopillars, each hosting its own dense, near-surface ensemble of NV centres. We explore the optimal geometry for diamond nanopillars hosting NV ensembles and realise enhanced spin and photoluminescence properties which lead to increased measurement sensitivities (greater than a factor of 3) when compared to unpatterned surfaces. Utilising the increased measurement sensitivity, we image the mechanical stress tensor in each nanopillar across the arrays and show the fabrication process has negligible impact on in-built stress compared to the unpatterned surface. Our results demonstrate that photonic nanostructuring of the diamond surface is a viable strategy for increasing the sensitivity of ensemble-based widefield sensing and imaging.

physics.optics↗

arXiv2018

Apparent delocalisation of the current flow in metallic wires observed with diamond nitrogen-vacancy magnetometry

We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic micro-wires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centres engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically-detected magnetic resonance spectroscopy. The in-plane magnetic field (i.e. parallel to the diamond surface) is found to be significantly weaker than predicted, while the out-of-plane field also exhibits an unexpected modulation. We show that the measured magnetic field is incompatible with Ampere's circuital law or Gauss's law for magnetism when we assume that the current is confined to the metal, independent of the details of the current density. This result was reproduced in several diamond samples, with a measured deviation from Ampere's law by as much as 94(6)\%. To resolve this apparent magnetic anomaly, we introduce a generalised description whereby the current is allowed to flow both above the NV sensing layer (including in the metallic wire) and below the NV layer (i.e. in the diamond). Inversion of the Biot-Savart law within this two-channel description leads to a unique solution for the two current densities, which completely explains the data, is consistent with the laws of classical electrodynamics and indicates a total NV-measured current that closely matches the electrically-measured current. However, this description also leads to the surprising conclusion that in certain circumstances the majority of the current appears to flow in the diamond substrate rather than in the metallic wire, and to spread laterally in the diamond by several micrometres away from the wire. No electrical conduction was observed between nearby test wires, ruling out a conventional conductivity effect. [...]

cond-mat.mes-hall↗

arXiv2018

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.

cond-mat.mtrl-sci↗

arXiv2018

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.

cond-mat.mtrl-sci↗

arXiv2018

Magnetic noise from ultra-thin abrasively deposited materials on diamond

Sensing techniques based on the negatively charged nitrogen-vacancy (NV) centre in diamond have emerged as promising candidates to characterise ultra-thin and 2D materials. An outstanding challenge to this goal is isolating the contribution of 2D materials from undesired contributions arising from surface contamination, and changes to the diamond surface induced by the sample or transfer process. Here we report on such a scenario, in which the abrasive deposition of trace amounts of materials onto a diamond gives rise to a previously unreported source of magnetic noise. By deliberately scratching the diamond surface with macroscopic blocks of various metals (Fe, Cu, Cr, Au), we are able to form ultra-thin structures (i.e. with thicknesses down to $<1$\,nm), and find that these structures give rise to a broadband source of noise. Explanation for these effects are discussed, including spin and charge noise native to the sample and/or induced by sample-surface interactions, and indirect effects, where the deposited material affects the charge stability and magnetic environment of the sensing layer. This work illustrates the high sensitivity of NV noise spectroscopy to ultra-thin materials down to sub-nm regimes -- a key step towards the study of 2D electronic systems -- and highlights the need to passivate the diamond surface for future sensing applications in ultra-thin and 2D materials.

cond-mat.mes-hall↗

arXiv2018

Proximity-induced artefacts in magnetic imaging with nitrogen-vacancy ensembles in diamond

Magnetic imaging with ensembles of nitrogen-vacancy (NV) centres in diamond is a recently developed technique that allows for quantitative vector field mapping. Here we uncover a source of artefacts in the measured magnetic field in situations where the magnetic sample is placed in close proximity (a few tens of nm) to the NV sensing layer. Using magnetic nanoparticles as a test sample, we find that the measured field deviates significantly from the calculated field, in shape, amplitude and even in sign. By modelling the full measurement process, we show that these discrepancies are caused by the limited measurement range of NV sensors combined with the finite spatial resolution of the optical readout. We numerically investigate the role of the stand-off distance to identify an artefact-free regime, and discuss an application to ultrathin materials. This work provides a guide to predict and mitigate proximity-induced artefacts that can arise in NV-based wide-field magnetic imaging, and also demonstrates that the sensitivity of these artefacts to the sample can make them a useful tool for magnetic characterisation.

cond-mat.mes-hall↗

arXiv2018

Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond

We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy ($4-30$~keV) and dose ($5\times10^{11}-10^{13}$~ions/cm$^2$) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at $\geq1100^\circ$C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving $\approx10$-17~nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications.

cond-mat.mtrl-sci↗