arXiv subjects

N. Haberkorn

Publications and source records attributed to N. Haberkorn.

At least 19 recordsLinked to original sources

arXiv2022

Low-temperature thermal expansion of the topological material candidates $β$-PtBi$_2$ and $β$-Bi$_2$Pd

We report on the low-temperature ($T <$ 120 K) thermal expansion of the bismuth-based topological semimetal $β$-PtBi$_2$ and topological superconductor $β$-Bi$_2$Pd candidates. The linear thermal-expansion coefficient of tetragonal $β$-Bi$_2$Pd shows a pronounced anisotropy between the $a$- and $c$-axis while the volume thermal-expansion coefficient $α_V$($β$-Bi$_2$Pd) is considerable larger than $α_V$($β$-PtBi$_2$). The coefficient $α_V$($β$-PtBi$_2$) nearly matches the experimental specific heat, from which a Debye temperature $θ_D =$ 199 K is obtained. On the other hand, $α_V$($β$-Bi$_2$Pd) reasonably fits the Debye model with $θ_D =$ 138 K, extracted from the low-temperature specific heat. An almost constant Grüneisen parameter $Γ\approx$ 2 is obtained for both compounds. No magnetostriction is observed in any of both compounds up to $μ_0 H =$ 16 T. We compare our results with other Bi-based topological materials.

cond-mat.str-el↗

arXiv2021

Nanocrystalline superconducting $γ$-Mo$_2$N ultra-thin films for single-photon detectors

We analyze the influence of the surface passivation produced by oxides on the superconducting properties of $γ$-Mo$_2$N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo$_2$N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time $\approx$ 45 ps. This value is promising for its applications in single-photon detectors.

cond-mat.supr-con↗

arXiv2020

Tuning the magneto-electrical properties of multiferroic multilayers through interface strain and disorder

Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effects on the superlattices with different structural characteristics. The crystalline structure was characterized by X-Ray diffraction and transmission electron microscopy. The magnetic and electronic properties were investigated by SQUID magnetometry and resistance measurements. The results show that both strain and structural disorder can significantly affect the physical properties of the systems. Compressive strain tends to increase the competition between the magnetic interactions decreasing the ferromagnetism of the samples and the localization of the charge carrier through the electron-phonon interaction. Tensile strain reduces the charge carrier localization, increasing the ferromagnetic transition temperature. Structural defects have a stronger influence on the magnetic properties than on the transport properties, reducing the ferromagnetic transition temperature while increasing the magnetic hardness of the superlattices. These results help to further understand the role of strain and interface effects in the magnetic and transport properties of manganite based multiferroic systems.

cond-mat.mtrl-sci↗

arXiv2020

Josephson coupling in high-T$_c$ superconducting junctions using ultra-thin BaTiO$_3$ barriers

We study the electrical transport of vertically-stacked Josephson tunnel junctions using GdBa$_2$Cu$_3$O$_{7-d}$ electrodes and a BaTiO$_3$ barrier with thicknesses between 1 nm and 3 nm. The junctions with an area of 20 mm x 20 mm were fabricated combining optical lithography and ion etching using GdBa$_2$Cu$_3$O$_{7-d}$ (16 nm) / BaTiO$_3$ (1 - 3 nm) / GdBa$_2$Cu$_3$O$_{7-d}$ (16 nm) trilayers growth by sputtering on (100) SrTiO$_3$. Current-voltage measurements at low temperatures show a Josephson coupling for junctions with BaTiO$_3$ barriers of 1 nm and 2 nm. Reducing the barrier thickness bellow a critical thickness seems to suppress the ferroelectric nature of the BaTiO$_3$. The Josephson coupling temperature is strongly reduced for increasing barrier thicknesses, which may be related to the suppression of the superconducting critical temperature in the bottom GdBa$_2$Cu$_3$O$_{7-d}$ due to stress. The Josephson energies at 12 K are of $\approx$ 1.5 mV and $\approx$ 7.5 mV for BaTiO$_3$ barriers of 1 nm and 2 nm. Fraunhofer patterns are consistent with fluctuations in the critical current due to structural inhomogeneities in the barriers. Our results are promising for the development of Josephson junctions using high-T$_c$ electrodes with energy gaps much higher than those usually present in conventional low-temperature superconductors.

cond-mat.supr-con↗

arXiv2019

Microstructural control of the transport properties of $β$-FeSe films grown by sputtering

We have investigated the correlation between structural and transport properties in sputtered $β$-FeSe films grown onto SrTiO$_3$ (100). The growth parameters, such as substrate temperature and thickness, have been varied in order to explore different regimes. In the limit of textured thick films, we found promising features like an enhanced $T_{\rm c}\sim12\,$K, a relatively high $H_{\rm c2}$ and a low anisotropy. By performing magnetoresistance and Hall coefficient measurements, we investigate the influence of the disorder associated with the textured morphology on some features attributed to subtle details of the multi-band electronic structure of $β$-FeSe. Regarding the superconductor-insulator transition (SIT) induced by reducing the thickness, we found a non-trivial evolution of the structural properties and morphology associated with a strained initial growth and the coalescence of grains. Finally, we discuss the origin of the insulating behavior in high-quality stressed epitaxial thin films. We found that a lattice distortion, described by the Poisson's coefficient associated with the lattice parameters \textit{a} and \textit{c}, may play a key role.

cond-mat.supr-con↗

arXiv2019

Electrical conductivity in extremely disordered molybdenum oxynitrides thin films

We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %, and the remaining 10 % was adjusted with mixtures N$_2$:O$_2$ (varying from pure N$_2$ to pure O$_2$). The crystalline and electronic structures and the electrical transport of the films depend on the chemical composition. Thin films grown using oxygen mixtures up 2 % have gamma-Mo$_2$N phase and display superconductivity. The superconducting critical temperature T$_c$ reduces from ~ 6.8 K to below 3.0 K as the oxygen increases. On the other hand, films grown using oxygen mixtures richer than 2 % are mostly amorphous. The electrical transport shows a semiconductor-like behavior with variable-range hopping conduction at low temperatures. The analysis of the optical properties reveals that the samples have not a defined semiconductor band gap, which can be related to the high structural disorder and the excitation of electrons in a wide range of energies

cond-mat.mtrl-sci↗

arXiv2019

Improving the Josephson energy in High-T$_c$ superconducting junctions for ultra-fast electronics

We report the electrical transport in vertical Josephson tunnel junctions (area 400 $μm$$^2$) using GdBa$_2$Cu$_3$O$_7$$_{-δ}$ electrodes and SrTiO$_3$ as an insulating barrier (with thicknesses between 1 nm and 4 nm). The results show Josephson coupling for junctions with SrTiO$_3$ barriers of 1 nm and 2 nm. The latter displays a Josephson of 8.9 mV at 12 K. This value is larger than the usually observed in planar arrays of junctions. Our results are promising for the development of superconducting electronic devices in the terahertz regime.

cond-mat.supr-con↗

arXiv2018

In-field dependences of the critical current density J$_c$ in GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors produced by Zr irradiation and post-annealing at low temperatures

We report the influence of 6 MeV Zr$^{4+}$ irradiation and post-irradiation annealing (200 °C) in the in-field dependences of the critical current densities J$_c$ of 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors grown by co-evaporation. Samples were irradiated with 6 MeV Zr$^{4+}$ and fluences between 2.3x10$^{11}$ cm$^{-2}$ and 3x10$^{12}$ cm$^{-2}$. The correlation between the superconducting critical temperature T$_c$ and in-field dependences of critical current densities J$_c$ has been analyzed. In addition, random disorder introduced by irradiation was reduced by thermal annealed at 200 °C. The analysis of our experimental findings indicates that the optimal irradiation (reducing random disorder by annealing) results in the suppression of the self-field J$_c$ of $\simeq$ 10 $\%$ and in-field J$_c$ enhancements nearly doubled at about 5 T. A clear correlation between T$_c$, disorder and self-field J$_c$ is observed. Additional random disorder and nanoclusters suppress systematically T$_c$ and increase the flux creep relaxation at intermediate temperatures (reducing the characteristic glassy $μ$ value).

cond-mat.supr-con↗

arXiv2018

Synthesis of nanocrystalline d-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive DC sputtering at room temperature

We report on the synthesis and characterization of nanocrystalline delta-MoN by crystallization of amorphous thin films grown on (100) Si by reactive sputtering at room temperature. Films with chemical composition MoN were grown using a deposition pressure of 5mTorr with a reactive mixture of Ar/(Ar+N2)=0.5. The as-grown films display mostly amorphous structure. Nanocrystalline delta-MoN phase is obtained after annealing at temperatures above 600 °C. The superconducting critical temperature Tc depends on film thickness. Thick films (170 nm) annealed at 700 °C for 30 min display a Tc = 11.2 K (close to the one reported for bulk specimens: 13 K), which is gradually suppressed to 7.2 K for 40 nm thick delta-MoN films. Our results provide a simple method to synthesize superconducting nitride thin films on silicon wafers with Tc above the ones observed for conventional superconductors such as Nb.

cond-mat.mtrl-sci↗

arXiv2017

Vortex dynamics in $β$-FeSe single crystals: effects of proton irradiation and small inhomogeneous stress

We report on the critical current density Jc and the vortex dynamics of pristine and 3 MeV proton irradiated (cumulative dose equal to 2x10^16 cm^-2) $β$-FeSe single crystals. We also analyze a remarkable dependence of the superconducting critical temperature Tc, Jc and the flux creep rate S on the sample mounting method. Free-standing crystals present Tc =8.4(1)K, which increases to 10.5(1)K when they are fixed to the sample holder by embedding them with GE-7031 varnish. On the other hand, the irradiation has a marginal effect on Tc. The pinning scenario can be ascribed to twin boundaries and random point defects. We find that the main effect of irradiation is to increase the density of random point defects, while the embedding mainly reduces the density of twin boundaries. Pristine and irradiated crystals present two outstanding features in the temperature dependence of the flux creep rate: S(T) presents large values at low temperatures, which can be attributed to small pinning energies, and a plateau at intermediate temperatures, which can be associated with glassy relaxation. From Maley analysis, we observe that the characteristic glassy exponent μ changes from ~ 1.7 to 1.35-1.4 after proton irradiation.

cond-mat.supr-con↗

arXiv2017

Effect of the nitrogen-argon gas mixtures on the superconductivity properties of reactively sputtered molybdenum nitride thin films

We report on the superconducting properties of molybdenum nitride thin films grown by reactive DC sputtering at room temperature with a N2:Ar mixture. Thin films grown using 5 % N2 concentration display Tc = 8 K, which is gradually reduced and abruptly disappears for 40 % N2 concentration. This suppression can be associated with changes in the nitrogen stoichiometry from Mo2N to MoN. Our results provide an effective and simple path to prepare Mo2Nx thin films with tunable Tc, which is relevant for the investigation of the fundamental properties and for technological applications.

cond-mat.mtrl-sci↗

arXiv2017

Effect of mixed pinning landscapes produced by 6 MeV Oxygen irradiation on the resulting critical current densities J$_c$ in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors grown by co-evaporation

We report the influence of crystalline defects introduced by 6 MeV $^{16}$O$^{3+}$ irradiation on the critical current densities J$_c$ and flux creep rates in 1.3 $μ$m thick GdBa$_2$Cu$_3$O$_{7-d}$ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2x10$^{13}$ cm$^{-2}$ and 4x10$^{14}$ cm$^{-2}$. At temperatures below 40 K with the magnetic field applied parallel (H//c) and at 45° (H//45°) to the c-axis, the in-field J$_c$ dependences can be significantly improved by irradiation. For doses of 1x10$^{14}$ cm$^{-2}$ the J$_c$ values at $μ$$_0$H = 5 T are doubled without affecting significantly the J$_c$ at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H//c and H//45° in pristine films presents characteristic glassy exponents $μ$ = 1.63 and $μ$ = 1.45, respectively. For samples irradiated with 1x10$^{14}$ cm$^{-2}$, these values drop to $μ$ = 1.45 and $μ$ =1.24, respectively.

cond-mat.supr-con↗

arXiv2015

Weak pinning and vortex bundles in anisotropic Ca$_{10}$(Pt$_4$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ single crystals

We report the magnetic field -- temperature ($H-T$) phase diagram of Ca$_{10}$(Pt$_4$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ ($x\approx 0.05$) single crystals, which consists of normal, vortex liquid, plastic creep and elastic creep phases. The upper critical field anisotropy is determined by a radio frequency technique via the measurements of magnetic penetration depth, $λ$. Both, irreversibility line, $H_{irr}(T)$, and flux creep line, $H^{SPM}(T)$, are obtained by measuring the magnetization. We find that $H_{irr}(T)$ is well described by the Lindemann criterion with parameters similar to those for cuprates, while small $H^{SPM}(T)$ results in a wide plastic creep regime. The flux creep rates in the elastic creep regime are in qualitative agreement with the collective creep theory for random point defects. A gradual crossover from a single vortex to a bundles regime is observed. Moreover, we obtain $λ(4~ \text K) = 260(26)$ nm through the direct measurement of the London penetration depth by magnetic force microscopy.

cond-mat.supr-con↗

arXiv2013

Two-band effect on the vortex dynamics and critical current density in an anisotropic MgB$_2$ thin film

We report the influence of intrinsic superconducting parameters on the vortex dynamics and the critical current densities of a MgB$_2$ thin film. The small magnetic penetration depth of λ= 50 nm at T=4 K is related to a clean π-band, and transport and magnetization data show an upper critical field similar to those reported in clean single crystals. We find a high self-field critical current density Jc, which is strongly reduced with applied magnetic field, and attribute this to suppression of the superconductivity in the π-band. The temperature dependence of the creep rate S(T) at low magnetic field can be explained by a simple Anderson-Kim mechanism. The system shows high pinning energies at low field that are strongly suppressed by high field, which is consistent with a two-band contribution.

cond-mat.supr-con↗

arXiv2013

Intrinsic superconducting properties and vortex dynamics in heavily overdoped Ba(Fe$_{0.86}$Co$_{0.14}$)$_2$As$_2$ single crystal

In this work we report the influence of intrinsic superconducting parameters on the vortex dynamics in an overdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ (x=0.14) single crystal. We find a superconducting critical temperature of 13.5 K, magnetic penetration depth $λ_{ab}$(0) = 660 $\pm$ 50 nm, coherence length $ξ_{ab}$(0) = 5 nm, and the upper critical field anisotropy $γ_{T\rightarrow Tc}$ $\approx$ 3.7. In fact, the Ginzburg-Landau model may explain the angular dependent $H_{c2}$ for this anisotropic three-dimensional superconductor. The vortex phase diagram, in comparison with the optimally doped compound, presents a narrow collective creep regime. In addition, we found no sign of correlated pinning along the c axis. Our results show that vortex core to defect size ratio and $λ$ play an important role in the resulting vortex dynamics in materials with similar intrinsic thermal fluctuations.

cond-mat.supr-con↗

arXiv2013

Ferromagnetic bubble clusters in Y$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films

We studied the ferromagnetic topology in a Y$_{0.67}$Ca$_{0.33}$MnO$_3$ thin film with a combination of magnetic force microscopy and magnetization measurements. Our results show that the spin-glass like behavior, reported previously for this system, could be attributed to frustrated interfaces of the ferromagnetic clusters embedded in a non-ferromagnetic matrix. We found temperature dependent changes of the magnetic topology at low temperatures, which suggests a non-static Mn$^{3+}$/Mn$^{4+}$ ratio.

cond-mat.str-el↗

arXiv2012

Magnetic penetration-depth measurements of a suppressed superfluid density of superconducting Ca$_{0.5}$Na$_{0.5}$Fe$_2$As$_2$ single crystals by proton irradiation

We report on the dramatic effect of random point defects, produced by proton irradiation, on the superfluid density $ρ_{s}$ in superconducting Ca$_{0.5}$Na$_{0.5}$Fe$_2$As$_2$ single crystals. The magnitude of the suppression is inferred from measurements of the temperature-dependent magnetic penetration depth $λ(T)$ using magnetic force microscopy. Our findings indicate that a radiation dose of 2$\times10^{16}$cm$^{-2}$ produced by 3 MeV protons results in a reduction of the superconducting critical temperature $T_{c}$ by approximately 10%. % with no appreciable change in the slope of the upper critical fields. In contrast, $ρ_{s}(0)$ is suppressed by approximately 60%. This break-down of the Abrikosov-Gorkov theory may be explained by the so-called "Swiss cheese model", which accounts for the spatial suppression of the order parameter near point defects similar to holes in Swiss cheese. Both the slope of the upper critical field and the penetration depth $λ(T/T_{c})/λ(0)$ exhibit similar temperature dependences before and after irradiation. This may be due to a combination of the highly disordered nature of Ca$_{0.5}$Na$_{0.5}$Fe$_2$As$_2$ with large intraband and simultaneous interband scattering as well as the $s^\pm$-wave nature of short coherence length superconductivity.

cond-mat.supr-con↗

arXiv2012

Direct measurement of the magnetic penetration depth by magnetic force microscopy

We present an experimental approach using magnetic force microscopy for measurements of the absolute value of the magnetic penetration depth $λ$ in superconductors. $λ$ is obtained in a simple and robust way without introducing any tip modeling procedure via direct comparison of the Meissner response curves for a material of interest to those measured on a reference sample. Using a well-characterized Nb film as a reference, we determine the absolute value of $λ$ in a Ba(Fe$_{0.92}$Co$_{0.08}$)$_{2}$As$_{2}$ single crystal and a MgB$_2$ thin film through a comparative experiment. Our apparatus features simultaneous loading of multiple samples, and allows straightforward measurement of the absolute value of $λ$ in superconducting thin film or single crystal samples.

cond-mat.supr-con↗