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N. I. Medvedeva

Publications and source records attributed to N. I. Medvedeva.

12 recordsLinked to original sources
arXiv2012

Work hardening behavior in a steel with multiple TRIP mechanisms

Transformation induced plasticity (TRIP) behavior was studied in steel with composition Fe-0.07C-2.85Si-15.3Mn-2.4Al-0.017N that exhibited two TRIP mechanisms. The initial microstructure consisted of both ε- and α-martensites with 27% retained austenite. TRIP behavior in the first 5% strain was predominately austenite transforming to ε-martensite (Stage I), but upon saturation of Stage I, the ε-martensite transformed to α-martensite (Stage II). Alloy segregation also affected the TRIP behavior with alloy rich regions producing TRIP just prior to necking. This behavior was explained by first principle calculations that revealed aluminum significantly affected the stacking fault energy in Fe-Mn-Al-C steels by decreasing the unstable stacking fault energy and promoting easy nucleation of ε-martensite. The addition of aluminum also raised the intrinsic stacking fault energy and caused the ε-martensite to be unstable and transform to α-martensite under further deformation. The two stage TRIP behavior produced a high strain hardening exponent of 1.4 and led to ultimate tensile strength of 1165 MPa and elongation to failure of 35%.

cond-mat.mtrl-sci↗
arXiv2012

First-principles study of the Mn, Al and C distribution and their effect on the stacking fault energies in austenite

We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities have influence on the stacking fault energies only when located within a few interatomic layers near stacking fault. As a result, the stacking fault energy does not depend on the average concentration of impurities in matrix, but is highly sensitive to the concentration of the impurities in the vicinity of stacking fault defect. We predict that manganese shows a slight tendency for segregation near SF, while carbon prefers to be located far from the stacking fault region. Both aluminum and carbon impurities linearly increase the SFE, while the formation of Mn-C pairs and short range Al-ordering restrain the SFE growth. Short range order in Fe-Al-C alloys strongly affects the energy barrier for nucleation of dislocations and may lead to softening phenomenon.

cond-mat.mtrl-sci↗
arXiv2004

Electronic structure of silver-deficient hexagonal AgB$_2$

Electronic structure and cohesive properties of metastable hexagonal AgB_{2} and silver-deficient borides Ag_{0.875}B_{2} and Ag_{0.750}B_{2} were investigated by means of the projected augmented wave method in the framework of the density functional theory (VASP package). We found that the density of states at the Fermi level for nonstoichiometric diborides is almost constant within a range of vacancy content up to 25%. The formation energy of metal vacancies in silver diboride is the least among all 4d metal diborides, i.e. for AgB_{2} is possible to expect the wide homogeneity region.

cond-mat.mtrl-sci↗
arXiv2004

Electronic band structure and chemical bonding in the novel antiperovskite ZnCNi3 as compared with 8-K superconductor MgCNi3

Energy band structure of the discovered ternary perovskite-like compound ZnCNi3 reported by Park et al (2004) as a non-superconducting paramagnetic metal was investigated using the FLMTO-GGA method. The electronic bands, density of states, Fermi surface, charge density and electron localization function distributions for ZnCNi3 are obtained and analyzed in comparison with the isoelectronic and isostructural 8K superconductor MgCNi3. The effect of external pressure on the electronic states of ZnCNi3 and MgCNi3 is studied.

cond-mat.supr-con↗
arXiv2003

Electronic properties of NiCl$_2$ tubular nanostructures

Atomic models of zigzag (n, 0)- and armchair (n,n)-like NiCl2 nanotubes (n = 4 - 29) formed by rolling (100) single layers of the bulk NiCl2 which crystallizes in the CdCl2-type structure, are constructed and their electronic properties and bond indices are investigated using the tight-binding band theory. The calculations performed show that all the considered nanotubes in non-magnetic state are uniformly metallic-like. The density of states at the Fermi level contains a considerable contribution from Ni3d states, its value depends on the atomic configuration and diameter of the tubes. The Ni-Cl covalent bonds were found in NiCl2 tubes, whereas Ni-Ni and Cl-Cl covalent interactions are almost absent. According our estimations, the zigzag (n, 0)-like NiCl2 nanotubes are more energetically favorable.

cond-mat.mtrl-sci↗
arXiv2002

Band structure of new superconducting AlB_2-like ternary silicides M(Al_{0.5}Si_{0.5})_2 and M(Ga_{0.5}Si_{0.5})_2 (M= Ca, Sr and Ba)

The electronic band structures of the new superconducting (with T_c up to 7.7K) ternary silicides M(A_{0.5}Si_{0.5})_2 (M= Ca, Sr, Ba; A= Al, Ga) in the AlB_2-type structure have been investigated using the full-potential LMTO method. The calculations showed that the trend in transition temperatures doesn't follow the changes in the density d-states at the Fermi level and probably is associated with phonon-mode frequencies.

cond-mat.supr-con↗
arXiv2002

Electronic Properties of TiO$_2$ Nanotubes

quasi-one-dimensional (1D) titania nanostructures - single-walled nanotubes formed by rolling [101] planes of TiO$_2$ (anatase phase) are modeled and their electronic properties and bond orders indices are studied using the tight-binding band theory. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. It was established that the zigzag (n,0) nanotubes configurations are more likely to form when the diameters are larger 1 nm. The Ti-O covalent bonds were found to be the strongest interactions in TiO$_2$ tubes, whereas Ti-Ti bonds proved to be much weaker.

cond-mat.mtrl-sci↗
arXiv2002

Effect of metal vacancies on the electronic band structure of hexagonal Nb, Zr and Y diborides

Energy band structures of metal-deficient hexagonal diborides M$_{0.75}$B$_2$ (M = Nb, Zr and Y) were calculated using the full-potential LMTO method. The metal vacancies change the density of states near the Fermi level and this effect is quite different for III-V group transition metal diborides. Contradictory data on superconductivity in diborides may be supposed to be connected with nonstoichiometry of samples. Vacancy formation energies are estimated and analyzed.

cond-mat.supr-con↗
arXiv2001

Electric field gradients in s-, p- and d-metal diborides and the effect of pressure on the band structure and T$_c$ in MgB$_2$

Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band structure and particularly to the M-B hybridization. The strong charge anisotropy at the B site in MgB$_2$ is completely defined by the valence electrons - a property which sets MgB$_2$ apart from other diborides. The boron EFG in MgB$_2$ is weakly dependent of applied pressure: the B p electron anisotropy increases with pressure, but it is partly compensated by the increase of core charge assymetry. The concentration of holes in bonding $σ$ bands is found to decrease slightly from 0.067 to 0.062 holes/B under a pressure of 10 GPa. Despite a small decrease of N(E$_F$), the Hopfield parameter increases with pressure and we believe that the main reason for the reduction under pressure of the superconducting transition temperature, T$_c$, is the strong pressure dependence of phonon frequencies, which is sufficient to compensate the electronic effects.

cond-mat.supr-con↗
arXiv2001

Electronic properties and Fermi surfaces MgCNi$_{3}$ and related intermetallics

The band structure of the new perovskite-like superconductor MgCNi$_{3}$ was studied by the self-consistent FP-LMTO method. The superconducting properties of MgCNi$_{3}$ are associated with an intensive peak in the density of Ni3d states near the Fermi level. The absence of superconductivity for nonstoichiometric compositions MgC$_{1-x}$Ni$_{3}$ is due to the transition of the system to the magnetic state. The possibility of superconductivity was discussed for intermetallics ScBNi$_{3}$, InBNi$_{3}$, MgCCo$_{3}$ and MgCCu$_{3}$ which are isostructural with MgCNi$_{3}$.

cond-mat.supr-con↗
arXiv2001

Electronic structure of superconducting MgB2 and related binary and ternary borides

First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simulation of a number of $MgB_2$-based ternary systems using a supercell approach demonstrates that (i) the electron doping of $MgB_2$ (i.e., $MgB_{2-y}X_y$ with X=Be, C, N, O) and the creation of isoelectronic defects in the boron sublattice (nonstoichiometric $MgB_{y<2}$) are not favorable for superconductivity, and (ii) a possible way of searching for similar MTSC should be via hole doping of $MgB_2$ (i.e., $Mg_{1-x}M_xB_2$ with M=Be, Ca, Li, Na, Cu, Zn) or $CaB_2$ or via creating layered superstructures of the $MgB_2/CaB_2$ type. A recent report of superconductivity in Cu doped $MgB_2$ supports this view.

cond-mat.supr-con↗