arXiv subjects
Publications and source records attributed to N. I. Rul.
The electrical, magnetic and optical properties of edge channels consisting of spin circuits that contain single carriers in nanostructures of silicon, silicon carbide and cadmium fluoride are investigated. It is demonstrated that due to the presence of chains of negative-U dipole centers at the boundaries of the spin circuits, the latter are Andreev molecules for generating terahertz radiation.
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300K, quantum Hall, 77K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface.
We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide that are confined by delta-barrier heavily doped with boron, which create the edge channels used as the phase controllers of electric signals. The formation of the negative-U dipole boron centers, which appear to confine the edge channels, results in the effective mass dropping and corresponding reduction of the electron-electron interaction thereby giving rise to the macroscopic quantum phenomena at high temperatures up to room temperature. The phase control of the longitudinal conductance is observed by changing either the magnitude of the source-drain current or the voltage applied to the external gate of the silicon nanosandwiches within the quantum Faraday effect.