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N. J. Ekins-Daukes

Publications and source records attributed to N. J. Ekins-Daukes.

3 recordsLinked to original sources

Identifying optimal photovoltaic technologies for underwater applications

Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct access to water and therefore circumvents the need for field testing during initial trials of development. Employing LEDs to simulate underwater solar spectra at various depths, we compare Si and CdTe solar cells, two commercially available technologies, with GaInP cells, a technology with a wide band gap close to ideal for underwater solar harvesting. We use this method to show that while Si cells outperform both CdTe and GaInP under terrestrial AM1.5G solar irradiance, both CdTe and GaInP outperform Si at depths > 2 m, with GaInP cells operating with underwater efficiencies exceeding 51%.

physics.app-ph↗

Singlet fission and tandem solar cells reduce thermal degradation and enhance lifespan

The economic value of a photovoltaic installation depends upon both its lifetime and power conversion efficiency. Progress towards the latter includes mechanisms to circumvent the Shockley- Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG enhanced silicon cell architectures result in lower cell operating temperatures, increasing the device lifetime compared to standard c-Si cells. Also demonstrated are further advantages from MEG enhanced silicon cells: (i) the device architecture can completely circumvent the need for current-matching; and (ii) upon degradation, tetracene, a candidate singlet fission (a form of MEG) material, is transparent to the solar spectrum. The combination of (i) and (ii) mean that the primary silicon device will continue to operate with reasonable efficiency even if the singlet fission layer degrades. The lifespan advantages of singlet fission enhanced silicon cells, from a module perspective, are compared favorably alongside the highly regarded perovskite/silicon tandem and conventional c-Si modules.

physics.app-ph↗

Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence

The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have very low non-radiative recombination rate and high radiative efficiency compared to the control InGaP sample. Along with the analyses of PL emission spectrum and external quantum efficiencies, it suggests that this is due to small confinement potentials in the conduction band but high confinement potentials in the valence band. These results explain several features found in InGaP/InGaAsP MQW solar cells previously.

cond-mat.mtrl-sci↗