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N. Markovic

Publications and source records attributed to N. Markovic.

15 recordsLinked to original sources

Stability Limits and Surface Chemistry of Ag Nanoparticles in Non-Adsorbing Electrolytes Probed by Bragg Coherent Diffractive Imaging

Surface chemistry is important across diverse fields such as corrosion and nanostructure synthesis. Unfortunately, many as-synthesized nanomaterials, including partially dealloyed nanoparticle catalysts for fuel cells, with highly active surfaces are not stable in their reactive environments, preventing widespread application. Thus, understanding instability by focusing on the structure-stability and defect-stability relationship at the nanoscale is crucial and will likely play an important role in meeting grand challenges. To this end, recent advances in imaging nanostructure stability have come via both electron, x-ray, and other techniques such as atomic force microscopy, but tend to be limited to specific sample environments and/or two-dimensional images. Here, we report investigations into the defect-stability relationship of silver nanoparticles to voltage-induced electrochemical dissolution imaged in-situ in three-dimensional (3D) detail by Bragg Coherent Diffractive Imaging (BCDI). We first determine the average dissolution kinetics by Stationary Probe Rotating Disk Electrode (SPRDE) in combination with inductively coupled plasma mass spectrometry (ICP-MS), which allows real-time in-situ measurement of Ag+ ions formation and the corresponding electrochemical current. We then observe the dissolution and redeposition processes in 3D with BCDI in single nanocrystals, providing unique insight about the role of surface strain, defects, and their coupling to the dissolution chemistry. The methods developed and the knowledge gained go well beyond a "simple" silver electrochemistry and are applicable to all electrocatalytic reactions where functional links between activity and stability are controlled by structure and defect dynamics.

cond-mat.mtrl-sci

Fabrication of sub-15nm aluminum wires by controlled etching

We describe a method for fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is simultaneously measured in-situ. The etching process can be stopped when the desired resistance is reached, and can be restarted at a later time. The resulting nanowires show a superconducting transition as a function of temperature and magnetic field that is consistent with their diameter. The width of the transition is similar to that of the lithographically defined wires, indicating that the etching process is uniform and that the wires are undamaged. This technique allows for precise control over the normal state resistance and can be used to create a variety of aluminum nanodevices.

cond-mat.mes-hall

Fabrication of One-Dimensional Programmable-Height Nanostructures via Dynamic Stencil Deposition

Dynamic stencil deposition (DSD) techniques offer a variety of fabrication advantages not possible with traditional lithographic processing, such as the the ability to directly deposit nanostructures with programmable height profiles. However, DSD systems have not enjoyed widespread usage due to their complexity. We demonstrate a simple, low-profile, portable, one-dimensional nanotranslation system that facilitates access to nanoscale DSD abilities. Furthermore we show a variety of fabricated programmable-height nanostructures, including parallel arrays of such structures, and suggest other applications that exploit the unique capabilities of DSD fabrication methods.

cond-mat.mes-hall

DC measurements of macroscopic quantum levels in a superconducting qubit structure with a time-ordered meter

DC measurements are made in a superconducting, persistent current qubit structure with a time-ordered meter. The persistent-current qubit has a double-well potential, with the two minima corresponding to magnetization states of opposite sign. Macroscopic resonant tunneling between the two wells is observed at values of energy bias that correspond to the positions of the calculated quantum levels. The magnetometer, a Superconducting Quantum Interference Device (SQUID), detects the state of the qubit in a time-ordered fashion, measuring one state before the other. This results in a different meter output depending on the initial state, providing different signatures of the energy levels for each tunneling direction. From these measurements, the intrawell relaxation time is found to be about 50 microseconds.

cond-mat.supr-con

Imaging the charge transport in arrays of CdSe nanocrystals

A novel method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting high resistances or very small diffusion coefficients.

cond-mat.mes-hall

Impact of time-ordered measurements of the two states in a niobium superconducting qubit structure

Measurements of thermal activation are made in a superconducting, niobium Persistent-Current (PC) qubit structure, which has two stable classical states of equal and opposite circulating current. The magnetization signal is read out by ramping the bias current of a DC SQUID. This ramping causes time-ordered measurements of the two states, where measurement of one state occurs before the other. This time-ordering results in an effective measurement time, which can be used to probe the thermal activation rate between the two states. Fitting the magnetization signal as a function of temperature and ramp time allows one to estimate a quality factor of 10^6 for our devices, a value favorable for the observation of long quantum coherence times at lower temperatures.

cond-mat.mes-hall

Quantum Phase Slips in Superconducting Nanowires

We have measured the resistance vs. temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1050 nm. With decreasing cross-sectional areas, the wires display increasingly broad resistive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to Tc and quantum phase slips (QPS) at low temperatures, but disagree with an earlier model based on a critical value of R_n/Rq. Our measurements provide strong evidence for QPS in thin superconducting wires.

cond-mat.supr-con

Electric Field Effect in Ultrathin Films near the Superconductor-Insulator Transition

The effect of an electric field on the conductance of ultrathin films of metals deposited on substrates coated with a thin layer of amorphous Ge was investigated. A contribution to the conductance modulation symmetric with respect to the polarity of the applied electric field was found in regimes in which there was no sign of glassy behavior. For films with thicknesses that put them on the insulating side of the superconductor-insulator transition, the conductance increased with electric field, whereas for films that were becoming superconducting it decreased. Application of magnetic fields to the latter, which reduce the transition temperature and ultimately quench superconductivity, changed the sign of the reponse of the conductance to electric field back to that found for insulators. We propose that this symmetric response to capacitive charging is a consequence of changes in the conductance of the a-Ge layer, and is not a fundamental property of the physics of the superconductor-insulator transition as previously suggested.

cond-mat.supr-con

Anomalous Hopping Exponents of Ultrathin Films of Metals

The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hopping conduction.

cond-mat.dis-nn

Tunable Charge Density Wave Transport in a Current-Effect Transistor

The collective charge density wave (CDW) conduction is modulated by a transverse single-particle current in a transistor-like device. Nonequilibrium conditions in this geometry lead to an exponential reduction of the depinning threshold, allowing the CDWs to slide for much lower bias fields. The results are in excellent agreement with a recently proposed dynamical model in which ''wrinkles'' in the CDW wavefronts are ''ironed'' by the transverse current. The experiment might have important implications for other driven periodic media, such as moving vortex lattices or ''striped phases'' in high-Tc superconductors.

cond-mat.str-el

The Superconductor-Insulator Transition in 2D

The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynamical critical exponent z. The phase diagram and the critical resistance have been studied as a function of film thickness and magnetic field. The results are discussed in terms of bosonic models of the superconductor-insulator transition, as well as the percolation models which predict finite dissipation at T=0.

cond-mat.supr-con

Thickness-Magnetic Field Phase Diagram at the Superconductor-Insulator Transition in 2D

The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found to be 1.2 for the zero field transition, and 1.4 for the finite field transition. Both results are different from the exponents found for the magnetic field tuned transition in the same system, 0.7.

cond-mat.dis-nn

New Universality Class at the Magnetic Field Tuned Superconductor-Insulator Transition?

The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by an applied magnetic field. A finite size scaling analysis has been carried out to determine the critical exponent product vz=0.7 for five films of different thicknesses and normal state resistances. This result differs from the exponents found in previous experiments on InOx and MoGe films. We discuss several possible reasons for this disagreement.

cond-mat.dis-nn

Evidence of a T=0 Quantum Critical Point Associated with the Crossover from Weak to Strong Localization

A crossover between logarithmic and exponential temperature dependence of the conductance (weak and strong localization) has been observed in ultrathin films of metals deposited onto substrates held at liquid helium temperatures. The resistance at the crossover is well defined by the onset of a nearly linear dependence of conductance on thickness at fixed temperature in a sequence of in situ evaporated films. The results of a finite size scaling analysis treating thickness as a control parameter suggest the existence of a T=0 quantum critical point which we suggest is a charge, or electron glass melting transition.

cond-mat.dis-nn

Evidence of Vortices on the Insulating Side of the Superconductor-Insulator Transition

The magnetoresistance of ultrathin insulating films of Bi has been studied with magnetic fields applied parallel and perpendicular to the plane of the sample. Deep in the strongly localized regime, the magnetoresistance is negative and independent of field orientation. As film thicknesses increase, the magnetoresistance becomes positive, and a difference between values measured in perpendicular and parallel fields appears, which is a linear function of the magnetic field and is positive. This is not consistent with the quantum interference picture. We suggest that it is due to vortices present on the insulating side of the superconductor-insulator transition.

cond-mat.dis-nn