arXiv subjects

N. Massacret

Publications and source records attributed to N. Massacret.

11 recordsLinked to original sources

arXiv2025

Characterization of external cross-talk from silicon photomultipliers in a liquid xenon detector

The Light-only Liquid Xenon experiment (LoLX) employs a small-scale detector equipped with 96 Hamamatsu VUV4 silicon photomultipliers (SiPMs) submerged in 5 kg of liquid xenon (LXe) to perform characterization measurements of light production, transport and detection in xenon. In this work, we perform a novel measurement of the "external cross-talk" (ExCT) of SiPMs, where photons produced in the avalanche process escape the device and produce correlated signals on other SiPMs. SiPMs are the photodetector technology of choice for next generation rare-event search experiments; understanding the sources and effects of correlated noise in SiPMs is critical for producing accurate estimates of detector performance and sensitivity projections. We measure the probability to observe ExCT through timing correlation of detected photons in low-light conditions within LoLX. Measurements of SiPM ExCT are highly detector dependent; thus the ExCT process is simulated and modelled using the Geant4 framework. Using the simulation, we determine the average transport and detection efficiency for ExCT photons within LoLX, a necessary input to extract the expected ExCT probability from the data. For an applied overvoltage of 4 V and 5 V, we measure a mean number of photons emitted into the LXe per avalanche of $0.5^{+0.3}_{-0.2}$ and $0.6^{+0.3}_{-0.2}$, respectively. Using an optical model to describe photon transmission through the SiPM surface, this corresponds to an estimated photon yield inside the bulk silicon of $20^{+11}_{-9}$ and $25^{+12}_{-9}$ photons per avalanche. The relative increase in intensity of SiPM ExCT emission between 4 V and 5 V is consistent with expectation for the linear increase of gain with respect to overvoltage.

physics.ins-det↗

arXiv2023

An integrated online radioassay data storage and analytics tool for nEXO

Large-scale low-background detectors are increasingly used in rare-event searches as experimental collaborations push for enhanced sensitivity. However, building such detectors, in practice, creates an abundance of radioassay data especially during the conceptual phase of an experiment when hundreds of materials are screened for radiopurity. A tool is needed to manage and make use of the radioassay screening data to quantitatively assess detector design options. We have developed a Materials Database Application for the nEXO experiment to serve this purpose. This paper describes this database, explains how it functions, and discusses how it streamlines the design of the experiment.

physics.ins-det↗

arXiv2022

Performance of novel VUV-sensitive Silicon Photo-Multipliers for nEXO

Liquid xenon time projection chambers are promising detectors to search for neutrinoless double beta decay (0$νββ$), due to their response uniformity, monolithic sensitive volume, scalability to large target masses, and suitability for extremely low background operations. The nEXO collaboration has designed a tonne-scale time projection chamber that aims to search for 0$νββ$ of \ce{^{136}Xe} with projected half-life sensitivity of $1.35\times 10^{28}$~yr. To reach this sensitivity, the design goal for nEXO is $\leq$1\% energy resolution at the decay $Q$-value ($2458.07\pm 0.31$~keV). Reaching this resolution requires the efficient collection of both the ionization and scintillation produced in the detector. The nEXO design employs Silicon Photo-Multipliers (SiPMs) to detect the vacuum ultra-violet, 175 nm scintillation light of liquid xenon. This paper reports on the characterization of the newest vacuum ultra-violet sensitive Fondazione Bruno Kessler VUVHD3 SiPMs specifically designed for nEXO, as well as new measurements on new test samples of previously characterised Hamamatsu VUV4 Multi Pixel Photon Counters (MPPCs). Various SiPM and MPPC parameters, such as dark noise, gain, direct crosstalk, correlated avalanches and photon detection efficiency were measured as a function of the applied over voltage and wavelength at liquid xenon temperature (163~K). The results from this study are used to provide updated estimates of the achievable energy resolution at the decay $Q$-value for the nEXO design.

physics.ins-det↗

arXiv2022

NEXO: Neutrinoless double beta decay search beyond $10^{28}$ year half-life sensitivity

The nEXO neutrinoless double beta decay experiment is designed to use a time projection chamber and 5000 kg of isotopically enriched liquid xenon to search for the decay in $^{136}$Xe. Progress in the detector design, paired with higher fidelity in its simulation and an advanced data analysis, based on the one used for the final results of EXO-200, produce a sensitivity prediction that exceeds the half-life of $10^{28}$ years. Specifically, improvements have been made in the understanding of production of scintillation photons and charge as well as of their transport and reconstruction in the detector. The more detailed knowledge of the detector construction has been paired with more assays for trace radioactivity in different materials. In particular, the use of custom electroformed copper is now incorporated in the design, leading to a substantial reduction in backgrounds from the intrinsic radioactivity of detector materials. Furthermore, a number of assumptions from previous sensitivity projections have gained further support from interim work validating the nEXO experiment concept. Together these improvements and updates suggest that the nEXO experiment will reach a half-life sensitivity of $1.35\times 10^{28}$ yr at 90% confidence level in 10 years of data taking, covering the parameter space associated with the inverted neutrino mass ordering, along with a significant portion of the parameter space for the normal ordering scenario, for almost all nuclear matrix elements. The effects of backgrounds deviating from the nominal values used for the projections are also illustrated, concluding that the nEXO design is robust against a number of imperfections of the model.

nucl-ex↗

arXiv2021

Characterisation of SiPM Photon Emission in the Dark

In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark condition, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-based physics experiments. A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM, and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC). Spectral measurements of their light emission were taken with varying over-voltage in the wavelength range of 450--1020\,nm. For the FBK VUV-HD3, at an over-voltage of $12.1\pm1.0$\,V, we measure a secondary photon yield (number of photons ($γ$) emitted per charge carrier ($e^{-}$)) of $(4.04\pm0.02)\times 10^{-6}$ $γ/e^{-}$. The emission spectrum of the FBK VUV-HD3 contains an interference pattern consistent with thin-film interference. Additionally, emission microscopy images (EMMIs) of the FBK VUV-HD3 show a small number of highly localized regions with increased light intensity (hotspots) randomly distributed over the SiPM surface area. For the HPK VUV4 MPPC, at an over-voltage of $10.7\pm1.0$\,V, we measure a secondary photon yield of $(8.71\pm0.04)\times 10^{-6}$ $γ/e^{-}$. In contrast to the FBK VUV-HD3, the emission spectra of the HPK VUV4 don't show an interference pattern -- most likely due to a thinner surface coating. EMMIs of the HPK VUV4 also reveal a larger number of hotspots compared to the FBK VUV-HD3, especially in one of the corners of the device.

physics.ins-det↗

arXiv2021

Reflectivity of VUV-sensitive Silicon Photomultipliers in Liquid Xenon

Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25-36% at an angle of incidence of 20° for the four samples and increases to up to 65% at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.

physics.ins-det↗

arXiv2021

Event Reconstruction in a Liquid Xenon Time Projection Chamber with an Optically-Open Field Cage

nEXO is a proposed tonne-scale neutrinoless double beta decay ($0νββ$) experiment using liquid ${}^{136}Xe$ (LXe) in a Time Projection Chamber (TPC) to read out ionization and scintillation signals. Between the field cage and the LXe vessel, a layer of LXe ("skin" LXe) is present, where no ionization signal is collected. Only scintillation photons are detected, owing to the lack of optical barrier around the field cage. In this work, we show that the light originating in the skin LXe region can be used to improve background discrimination by 5% over previous published estimates. This improvement comes from two elements. First, a fraction of the $γ$-ray background is removed by identifying light from interactions with an energy deposition in the skin LXe. Second, background from ${}^{222}Rn$ dissolved in the skin LXe can be efficiently rejected by tagging the $α$ decay in the ${}^{214}Bi-{}^{214}Po$ chain in the skin LXe.

physics.ins-det↗

arXiv2020

Mechanical Ventilator Milano (MVM): A Novel Mechanical Ventilator Designed for Mass Scale Production in Response to the COVID-19 Pandemic

Presented here is the design of the Mechanical Ventilator Milano (MVM), a novel mechanical ventilator designed for rapid mass production in response to the COVID-19 pandemic to address the urgent shortage of intensive therapy ventilators in many countries, and the growing difficulty in procuring these devices through normal supply chains across borders. This ventilator is an electro-mechanical equivalent of the old and reliable Manley Ventilator, and is able to operate in both pressure-controlled and pressure-supported ventilation modes. MVM is optimized for the COVID-19 emergency, thanks to the collaboration with medical doctors in the front line. MVM is designed for large-scale production in a short amount of time and at a limited cost, as it relays on off-the-shelf components, readily available worldwide. Operation of the MVM requires only a source of compressed oxygen (or compressed medical air) and electrical power. Initial tests of a prototype device with a breathing simulator are also presented. Further tests and developments are underway. At this stage the MVM is not yet a certified medical device but certification is in progress.

physics.med-ph↗

arXiv2019

Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon

Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 micrometer micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 deg. incidence of three samples of VUV4 SiPMs is found to be 30.4+/-1.4%, 28.6+/-1.3%, and 28.0+/-1.3%, respectively. The PDE at normal incidence differs by +/-8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.

physics.ins-det↗

arXiv2019

Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths

Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.

physics.ins-det↗

arXiv2019

Characterization of SiPM Avalanche Triggering Probabilities

Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this paper, we introduce a physics motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs the induced avalanches are electron-driven in the ultra-violet and near-ultra-violet ranges, while they become increasingly hole-driven towards the near-infra-red range. The model has been successfully applied to characterize two Hamamatsu MPPCs and one FBK SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight on the electric field structure within SiPMs, which can explain the limitation of existing devices and be used to optimize the performance of future SiPMs.

physics.ins-det↗