arXiv subjects

N. P. Stepina

Publications and source records attributed to N. P. Stepina.

6 recordsLinked to original sources

arXiv2023

Indication of novel magnetoresistance mechanism in (Bi,Sb)$_2$(Te,Se)$_3$ 3D topological insulator thin films

Electron states with the spin-momentum-locked Dirac dispersion at the surface of a three-dimensional (3D) topological insulator are known to lead to weak antilocalization (WAL), i.e. low temperature and low-magnetic field quantum interference-induced positive magnetoresistance (MR). In this work we report on the MR measurements in (Bi,Sb)$_2$(Te,Se)$_3$ 3D topological insulator thin films epitaxially grown on Si(111), demonstrating an anomalous WAL amplitude. This anomalously high amplitude of WAL can not be explained by parabolic or linear MR and indicates the existence of an additional, MR mechanism. Another supporting observation is not linear in the classically weak magnetic field Hall effect in the same films. The increase of the low-field Hall coefficient, with respect to the higher-field value, reaches 10$\%$. We consistently explain both transport features within a two-liquid model, where the mobility of one of the components drops strongly in a weak magnetic field. We argue that this dependence may arise from the Zeeman field induced gap opening mechanism.

cond-mat.mes-hall↗

arXiv2020

Tunneling magnetoresistance in ensembles of ferromagnetic granules with exchange interaction and random easy axes of magnetic anisotropy

We study the tunneling magnetoresistance in the ensembles of ferromagnetic granules with random easy axes of magnetic anisotropy taking into account the exchange interaction between granules. It is shown that due to the exchange interaction magnetoresistance is effectively decoupled from magnetization, i.e. the strongest negative magnetoresistance can be observed at the field where magnetization is almost saturated. Under some conditions, the sign of magnetoresistance can be reversed and tunneling magnetoresistance can become positive at certain magnetic fields. Our theory agrees with measurements of magnetoresistance in ensembles of Fe granules in SiCxNy matrix.

cond-mat.mes-hall↗

arXiv2018

Hall effect in 2D systems with hopping transport and strong disorder

We reconsider the theory of Hall effect in the systems with hopping conduction. The purpose of the present study is to compare the percolation approach based on the optimal triad model with numerical simulations and recent experimental results. We show that, in the nearest neighbor hopping regime, the results of the percolation theory agree to the simulation. However, in the variable range hopping (VRH) regime, the optimal triad model fails to describe the numerical results. It is related to the extremely small probability to find the optimal triad of sites in the percolation cluster in the VRH regime. The contribution of these triads to the Hall effect appears to be small. We describe the Hall mobility in the VRH regime with the empirical law obtained from the numerical results. The law is in agreement with our recent experimental data in 2D quantum dot arrays with the hopping transport.

cond-mat.dis-nn↗

arXiv2013

Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance

Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave ($cw$) ESR and spin-echo methods. We find that the existence of quantum dot groups allows to increase the spin relaxation time in the system. Created structures allow us to change an effective localization radius of electrons by external magnetic field. With the localization radius close to the size of a quantum dot group, we obtain fourfold increasing spin relaxation time $T_1$, as compared to conventional homogeneous quantum dot arrays. This effect is attributed to averaging of local magnetic fields related to nuclear spins $^{29}$Si and stabilization of $S_z$-polarization during electron back-and-forth motion within a quantum dot group.

cond-mat.mes-hall↗

arXiv2013

Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder

Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found to be similar for all samples - it is negative in weak fields and becomes positive with increase of magnetic field. The result apparently contradicts to existing theories. To explain experimental data we suggest that clusters of overlapping quantum dots are formed. These clusters are assumed to have metal-like conductance, the charge transfer taking place via hopping between the clusters. Relatively strong magnetic field shrinks electron wave functions decreasing inter-cluster hopping and, therefore, leading to a positive magnetoresistance. Weak magnetic field acts on "metallic" clusters destroying interference of electron wave function corresponding to different paths (weak localization) inside clusters. The interference may be restricted either by inelastic processes, or by the cluster size. Taking into account WL inside clusters and hopping between them within the effective medium approximation we extract effective parameters characterizing charge (magneto) transport.

cond-mat.mes-hall↗

arXiv2012

Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods

Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.

cond-mat.mes-hall↗