arXiv subjects

N. S. Averkiev

Publications and source records attributed to N. S. Averkiev.

At least 19 recordsLinked to original sources

arXiv2026

Fine structure of the cyclotron resonance in heterobilayers of proximitized graphene and transition metal dichalcogenides

A monolayer graphene and its Dirac electrons can be equipped with an enhanced spin-orbit coupling (SOC) when proximitized by other van der Waals (vdW) materials, such as transition metal dichalcogenides (TMDs). In this work we analyze the cyclotron resonance (CR) absorption of such heterobilayers at quantizing magnetic fields in the presence of proximity-induced spin interactions, including the spin-pseudospin Rashba coupling. We evaluate the spin-textured wave functions of the Landau levels and calculate the absorption spectrum paying special attention to its spin proximity induced modifications. We reveal the formation of a fine double-peak structure of the main interband CR transitions, as well as the presence of additional spin-flip absorption, the combined cyclotron resonance (CCR), centered at different resonant frequencies. The selection rules for CCRs are identified and complemented by the perturbation theory analysis. We also discuss the polarization dependence of the absorption and the proximity-induced emerging magneto-optical responses. Our theory explains the effect of proximity-induced spin interactions for Dirac electrons cyclotron resonance and points out at its experimental verifications.

cond-mat.mes-hall↗

arXiv2025

Disordered quantum antiferromagnetism in doped semiconductors: Density of states approach

We present a theoretical study of the exchange interaction in a system of spatially disordered magnetic moments. A typical example of such a system is an impurity semiconductor, whose magnetic properties are associated with the exchange interaction of the impurity atoms. In this study, we consider the case of antiferromagnetic exchange interaction, which we describe by the Heisenberg Hamiltonian. To calculate the magnetic properties of the disordered system, we employ the density of states method. Our calculations demonstrate a good quantitative agreement with the dependence of the Si:P magnetic susceptibility on temperature in a wide range of impurity concentrations and temperatures.

cond-mat.str-el↗

arXiv2025

Bisingular surface polaritons at the interface of two uniaxial media

In some anisotropic bulk media (for example, biaxial weakly absorbing crystals) there are special directions along which the plane wave field distribution has a singular profile of the form $\propto (\mathbf{n} \mathbf{r}) \exp(i q \mathbf{n} \mathbf{r})$. They are also known as Voigt waves. Similar singular profiles also arise in the theory of surface electromagnetic waves in anisotropic media. In this work we have considered surface polaritons at the interface of two, generally different, uniaxial media. Optic axis of both media is parallel to the interface. One of the specific solutions, called bisingular, greatly simplifies the dispersion equation for surface polaritons. In this case the analytical solution in closed form is found and existence conditions have been determined. It is shown that bisingular surface polariton exists only for certain angles between the optic axes, which are found from two cubic equations. All parameters of the bisingular surface polariton depend only on permittivities and this angle. If one medium is weakly anisotropic, or both media are almost the same then two angles exist. In the general case of two arbitrary media there can be from two to six such angles.

physics.optics↗

arXiv2024

Optical Orientation of Mn$^{2+}$ Spins in Bulk (Zn, Mn)Se Induced by Magnetic Field

The optical orientation of Mn$^{2+}$ spins in the first excited state $^4$T$_1$ was experimentally observed in bulk (Zn, Mn)Se ($x_\mathrm{Mn}=0.01$) in the an external magnetic field of up to $6\,$T in Faraday geometry. This occurred during quasi-resonant continuous wave circularly polarized photoexcitation of the intracenter d-d transitions. A non-monotonic dependence of the thermal circular polarization of the intracenter photoluminescence on the magnetic field was observed. A theoretical model is proposed to describe the selection rules for resonant optical d-d transitions of an isolated Mn$^{2+}$ ion in a ZnSe cubic crystal. These rules are based on the analysis of the total angular momentum symmetry for the ground ($^6$A$_1$) and first excited ($^4$T$_1$) states of the Mn$^{2+}$ ion. This discussion neglects the specific mechanism for spin-flip processes in a d-shell of the ion during optical excitation. The analysis is founded on the rotational symmetry of the effective total angular momenta and parity for each state as a whole. Additionally, the Jahn-Teller coupling of the excited state orbital parts with tetragonal ($e$-type) local distortions of the crystal lattice is considered. This coupling results in the segregation of cubic axes and spin projections on these axes due to weak spin-orbit and spin-spin coupling in the excited state. This leads to energy splitting for spin states with their projections of $\pm 1/2$ and $\pm 3/2$ on each axis distinguished by specific Jahn-Teller distortion in the corresponding atomic potential minimum. By introducing two different times of relaxation to reach thermodynamic equilibrium for $\pm 1/2$ and $\pm 3/2$ states in each Jahn-Teller configuration, an angle dependent optical orientation contribution in photoluminescence polarization arises in the presence of a magnetic field.

cond-mat.mes-hall↗

arXiv2024

Emergent equilibrium and quantum criticality in a two-photon dissipative oscillator

We study the dissipative phase transition in a quantum oscillator with two-photon drive and two-photon dissipation. Using the semi-classical Langevin equation and the Fokker-Plank approach, we construct a theory of non-perturbative quantum fluctuations and go beyond the semi-classical approximation. We demonstrate the mapping of a two-photon quantum dissipative oscillator onto a classical equilibrium model of a nonlinear classical oscillator in a colored-noise environment. Then, we justify the applicability of the Landau theory for a given dissipative phase transition. To do that, we explicitly demonstrate the Boltzmann-like form of stationary distribution function depending on the effective temperature, which is determined by the frequency detuning and the rates of two-photon drive and dissipation. In addition, we provide a description of the quantum critical region and obtain critical exponents that appear to be in very good agreement with numerical simulations.

quant-ph↗

arXiv2023

Phase diagram of a ferromagnetic semiconductor. The origin of superparamagnetism

We study the theoretical model of a ferromagnetic semiconductor as a system of randomly distributed Ising spins with a long-range exchange interaction. Using the density-of-states approach, we analytically obtain the magnetic susceptibility and heat capacity over a wide range of temperatures and magnetic fields. It is shown that the finite system of spins in magnetic field less than a certain critical field is in a superparamagnetic state due to thermodynamic fluctuations. The complex phase structure of a ferromagnetic semiconductor is discussed.

cond-mat.str-el↗

arXiv2023

Optical orientation of excitons in hybrid metal-semiconductor nanostructures

We demonstrate the possibility of the optical orientation of excitons in the near field of the metal grating that covers a semiconductor nanostructure. Excitons generated this way have the wave vector greater than the wave vector of the incident radiation. We suggest that optical orientation method is applicable to study the fine structure and kinetics of the hot excitons in semiconductor quantum well.

cond-mat.mes-hall↗

arXiv2023

Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence

In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This fact is in accordance with the previous hypothesis of deformation dependence of Mn acceptors in GaAs fine energy structure obtained from Raman spectroscopy, and we show that this dependence has the same magnitude. Also, we resolve here the problem of a substantial high temperature mismatch between well-developed theory and experimental data for the static magnetic susceptibility of Mn ions in GaAs. We show by numerical estimates and calculations that quite a strong parametric dependence of the exchange coupling value on GaAs lattice expansion determines the high temperature (above $50~$K) magnetic susceptibility reduction as well.

cond-mat.mtrl-sci↗

arXiv2022

Shot noise in resonant tunneling: Role of inelastic scattering

We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of this statement by deriving a general Landaur-Büttiker-type formula that expresses the current noise and Fano factor in a one-dimensional conductor through inelastic scattering amplitudes. For a double-barrier structure, exact scattering amplitudes are calculated in the presence of a time-dependent potential. As an example of dephasing potential, we consider the one induced by equilibrium phonons. We calculate transmission coefficients of a double-barrier structure for these two types of phonon-induced dephasing. In the case of diffusive phase relaxation valid for one dimension phonons, the resonant level has a Lorentzian shape. For phonons whith high dimensions logarithmic dephasing realized which leads to an unusual shape of the size-quantized level characterized by the two energy scales. We further calculate the Fano factor for these types of dephasing, using exact expressions for inelastic transmission and reflection amplitudes. It turned out that when an integer number of levels fall into the energy window of width eV, where V is the voltage applied to the structure, the Fano factor is really insensitive to inelastic processes inside the structure and coincides with the prediction of phenomenological models with an accuracy of small corrections depending on these processes. On the contrary, at low voltages, when the eV window is smaller than the level width, this dependence is particularly pronounced and the phenomenological formula does not work.

cond-mat.mes-hall↗

arXiv2021

Dissipative phase transition in systems with two-photon drive and nonlinear dissipation near the critical point

We study dissipative phase transition near the critical point for a system with two-photon driving and nonlinear dissipation. The proposed mean-field theory, which explicitly takes into account quantum fluctuations, allowed us to describe properly the evolution dynamics of the system and to demonstrate the new effects in the steady-state. We show that the presence of quantum fluctuations leads to a power-law dependence of the anomalous average at the phase transition point, with which the critical exponent is associated. Also, we investigate the effect of the quantum fluctuations on the critical point renormalization and demonstrate the existence of a two-photon pump threshold. It is noteworthy that the obtained results are in a good agreement with the numerical simulations.

quant-ph↗

arXiv2021

Anisotropic magnetoresistance and memory effect in bulk systems with extended defects

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direction becomes parallel to the defects axis. This effect gives rise to a significant magnetoresistance anisotropy already for an isotropic Fermi surface and no spin-orbit effects. The proposed resistivity feature can be used to detect one-dimensional scattering defects in these systems.

cond-mat.mes-hall↗

arXiv2021

Spin relaxation in diluted magnetic semiconductors. GaMnAs as example

We report on study of magnetic impurities spin relaxation in diluted magnetic semiconductors above Curie temperature. Systems with a high concentration of magnetic impurities where magnetic correlations take place were studied. The developed theory assumes that main channel of spin relaxation is mobile carriers providing indirect interactions between magnetic impurities. Our theoretical model is supported by experimental measurements of manganese spin relaxation time in GaMnAs by means of spin-flip Raman scattering. It is found that with temperature increase spin relaxation rate of ferromagnetic samples increases and tends to that measured in paramagnetic sample.

cond-mat.mtrl-sci↗

arXiv2020

Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.

cond-mat.other↗

arXiv2020

Sign-reversal electron magnetization in Mn-doped semiconductor structures

The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.

cond-mat.mes-hall↗

arXiv2019

Chiral spin structure of electron gas in systems with magnetic skyrmions

The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.

cond-mat.mes-hall↗

arXiv2019

Chiral spin ordering of electron gas in solids with broken time reversal symmetry

In this work we manifest that an electrostatic disorder in conducting systems with broken time reversal symmetry universally leads to a chiral ordering of the electron gas giving rise to skyrmion-like textures in spatial distribution of the electron spin density. We describe a microscopic mechanism underlying the formation of the equilibrium chiral spin textures in two-dimensional systems with spin-orbit interaction and exchange spin splitting. We have obtained analytical expressions for spin-density response functions and have analyzed both local and non-local spin response to electrostatic perturbations for systems with parabolic-like and Dirac electron spectra. With the proposed theory we come up with a concept of controlling spin chirality by electrical means.

cond-mat.mes-hall↗

arXiv2018

Two components of donor-acceptor recombination in compensated semiconductors. Analytical model of spectra in presence of electrostatic fluctuations

We report numerical and analytical studies of the donor-acceptor recombination in compensated semiconductors. Our calculations take into account random electric fields of charged impurities which are important in non zero compensation case. We show that the donor-acceptor optical spectrum can be described as a sum of two components: monomolecular and bimolecular. In the low compensation limit we develop two analytical models for both types of the recombination. Also our numerical simulation predicts that these two components of the photoluminescence spectra can be resolved under certain experimental conditions.

cond-mat.mes-hall↗

arXiv2018

General theory of topological Hall effect in systems with chiral spin textures

We present a consistent theory of the topological Hall effect (THE) in 2D magnetic systems with disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity tensor on the basis of the Boltzmann kinetic equation taking into account the asymmetric scattering on skyrmions via the collision integral. Our theory describes both the adiabatic regime, when THE arises from a spin Hall effect and the non-adiabatic scattering when THE is due to purely charge transverse currents. We analyze the dependence of THE resistivity on a chiral spin texture structure,as well as on material parameters. We discuss the crossover between spin and charge regimes of THE driven by the increase of skyrmion size, the features of THE due to the variation of the Fermi energy, and the exchange interaction strength; we comment on the sign and magnitude of THE

cond-mat.mes-hall↗