N. Sherlekar | Searcharxiv

arXiv2026

Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect

Bright electroluminescence (EL) from dopant-free ambipolar lateral p-n junctions in GaAs/AlGaAs single heterointerface (SH) heterostructures is used to probe neutral free excitons arising from two-dimensional electron and hole gases (2DEGs and 2DHGs). The EL spectra reveal both the heavy-hole neutral free exciton (X$^0$) and the high-energy free exciton of the H band (HE). A combination of transition energies, lifetimes, spatial emission profiles, and temperature dependences points to a predominantly two-dimensional character for these excitons at the SH. For X$^0$, the EL peak energies (1515.5-1515.7 meV) lie slightly above the corresponding bulk GaAs photoluminescence (PL) line at 1515.3 meV, while time-resolved measurements yield markedly shorter lifetimes for EL than for PL (337 ps vs. 1610 ps), consistent with recombination in a confined interfacial layer. The HE exciton exhibits a Stark blueshift under forward bias below threshold, and its energies and lifetimes (down to 575 ps) are tuned by the topgate voltage; above threshold, HE emission is quenched in favor of X$^0$. Finally, the tidal effect $-$ a form of pulsed EL generated by swapping the topgate voltage polarity in ambipolar field-effect transistors $-$ produces an X$^0$ line at the same energy as in the lateral p-n junction and reproduces the characteristic nonmonotonic frequency dependence of the brightness previously observed in quantum-well heterostructures, again indicating a 2D-like origin. Taken together, these results show electrically generated and controllable 2D-like excitons (HE and X$^0$), thereby bridging 2D exciton physics and 2DEG/2DHG platforms in dopant-free GaAs/AlGaAs SH devices.

cond-mat.mes-hall↗

arXiv2024

Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor

We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoing carriers of opposite charge to meet and recombine radiatively. We develop a model to explain the carrier dynamics that underpins the frequency response of the pulsed electroluminescence intensity. Higher mobilities enable larger active emission areas than previous reports, as well as stable emission over long timescales.

cond-mat.mes-hall↗

arXiv2017

Path to perfect photon entanglement with a quantum dot

Realizing perfect two-photon entanglement from quantum dots has been a long-standing scientific challenge. It is generally thought that the nuclear spins limit the entanglement fidelity through spin flip dephasing processes. However, this assumption lacks experimental support. Here, we show dephasing-free two-photon entanglement from an Indium rich single quantum dot comprising of nuclear spin 9/2 when excited quasi-resonantly. This remarkable finding is based on a perfect match between our entanglement measurements with our model that assumes no dephasing and takes into account the detection system's timing jitter and dark counts. We discover that neglecting the detection system is responsible for not reaching perfect entanglement in the past and not the nuclear spins. Therefore, the key to unity entanglement from quantum dots comprises of a resonant excitation scheme and a detection system with ultra-low timing jitter and dark counts.

quant-ph↗