arXiv subjects

Nadia Stelmashenko

Publications and source records attributed to Nadia Stelmashenko.

8 recordsLinked to original sources

arXiv2026

Competing magnetic states in a non-coplanar Kagome magnet

Non-collinear Kagome antiferromagnets (AFMs) Mn3X (X = Sn, Ga, Ge, Ir, Pt) can generate an anomalous Hall effect (AHE) despite vanishing net magnetization, enabled by broken time-reversal and inversion symmetries. However, strong in-plane anisotropy has limited studies of the AFM-AHE and electronic applications to coplanar spin configurations. Non-coplanar spin textures in these systems have been realized only in low temperature spin-glass states or at interfaces with heavy metals. Here, we report an intrinsic non-coplanar spin configuration persisting up to 400 K in cubic-phase Mn3Ge, originating from coexisting symmetric and antisymmetric exchange interactions. Competing magnetic states associated with this non-coplanar spin configuration give rise to an unconventional AHE with a magnetic-field-induced sign reversal and a hump-like feature. Our findings establish a platform for non-coplanar magnetism in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface

A change in a materials electrical resistance with magnetic field (magnetoresistance) results from quantum interference effects and, or spin-dependent transport, depending on materials properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; in contrast, ferromagnetic conductors support spin-dependent scattering, leading to giant magnetoresistance (GMR). By varying the thickness of Au between 4 and 28 nm in a EuS/Au/EuS spin-switches, we observe a crossover from weak anti-localization to interfacial GMR. The crossover is related to a magnetic proximity effect in Au due to electron scattering at the insulating EuS interface. The proximity-induced exchange field in Au suppresses weak anti-localization, consistent with Maekawa-Fukuyama theory. With increasing Au thickness, GMR emerges along with spin Hall magnetoresistance. These findings demonstrate spin transport governed by interfacial exchange fields, building a framework for spintronic functionality without metallic magnetism.

cond-mat.mtrl-sci↗

arXiv2024

Realisation of de Gennes$'$ Absolute Superconducting Switch with a Heavy Metal Interface

In 1966, Pierre-Gilles de Gennes proposed a non-volatile mechanism for switching superconductivity on and off in a magnetic device. This involved a superconductor (S) sandwiched between ferromagnetic (F) insulators in which the net magnetic exchange field could be controlled through the magnetisation-orientation of the F layers. Because superconducting switches are attractive for a range of applications, extensive studies have been carried out on $F/S/F$ structures. Although these have demonstrated a sensitivity of the superconducting critical temperature ($T_{c}$) to parallel (P) and antiparallel (AP) magnetisation-orientations of the F layers, corresponding shifts in $T_c$ (i.e., ${\Delta}T_c = T_{c,AP} - T_{c,P}$) are lower than predicted with ${\Delta}T_c$ only a small fraction of $T_{c,AP}$, precluding the development of applications. Here, we report $EuS/Au/Nb/EuS$ structures where EuS is an insulating ferromagnet, Nb is a superconductor and Au is a heavy metal. For P magnetisations, the superconducting state in this structure is quenched down to the lowest measured temperature of 20 mK meaning that ${\Delta}T_c/T_{c,AP}$ is practically 1. The key to this so-called absolute switching effect is a sizable spin-mixing conductance at the $EuS/Au$ interface which ensures a robust magnetic proximity effect, unlocking the potential of $F/S/F$ switches for low power electronics.

cond-mat.supr-con↗

arXiv2023

Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots

Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge state readout at the state-of-the-art. The assembly consist of a superconducting readout resonator interfaced to a silicon-on-insulator (SOI) chiplet containing quantum dots (QDs) in a high-$\kappa$ nanowire transistor. The superconducting chiplet contains resonant and coupling elements as well as $LC$ filters that, when interfaced with the silicon chip, result in a resonant frequency $f=2.12$ GHz, a loaded quality factor $Q=850$, and a resonator impedance $Z=470$ $\Omega$. Combined with the large gate lever arms of SOI technology, we achieve a minimum integration time for single and double QD transitions of 2.77 ns and 13.5 ns, respectively. We utilize the assembly to measure charge noise over 9 decades of frequency up to 500 kHz and find a 1/$f$ dependence across the whole frequency spectrum as well as a charge noise level of 4 $\mu$eV/$\sqrt{\text{Hz}}$ at 1 Hz. The modular microwave circuitry presented here can be directly utilized in conjunction with other quantum device to improve the readout performance as well as enable large bandwidth noise spectroscopy, all without the complexity of superconductor-semiconductor monolithic fabrication.

cond-mat.mes-hall↗

arXiv2021

Quantum Dot-Based Parametric Amplifiers

Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.

cond-mat.mes-hall↗

arXiv2021

Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot

Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done most accurately and scalably via Pauli spin blockade (PSB), however various mechanisms may lift PSB and complicate readout. In this work, we present an experimental observation of a new, highly prevalent PSB-lifting mechanism in a silicon double quantum dot due to incoherent tunneling between different spin manifolds. Through dispersively-detected magnetospectroscopy of the double quantum dot in 16 charge configurations, we find the mechanism to be energy-level selective and non-reciprocal for neighbouring charge configurations. Additionally, using input-output theory we report a large coupling of different electron spin manifolds of 7.90 $\mu$eV, the largest reported to date, indicating an enhanced spin-orbit coupling which may enable all-electrical qubit control.

cond-mat.mes-hall↗

arXiv2021

Thermal annealing enhancement of Josephson critical currents in ferromagnetic CoFeB

The electrical and structural properties of Co40Fe40B20 (CoFeB) alloy are tunable with thermal annealing. This is key in the optimization of CoFeB-based spintronic devices, where the advantageously low magnetic coercivity, high spin polarization, and controllable magnetocrystalline anisotropy are utilised. So far, there has been no report on superconducting devices based on CoFeB. Here, we report Nb/CoFeB/Nb Josephson devices and demonstrate an enhancement of the critical current by up to 700% following thermal annealing due to increased structural ordering of the CoFeB. The results demonstrate that CoFeB is a promising material for the development of superconducting spintronic devices.

cond-mat.supr-con↗

arXiv2019

A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation

Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has provided the highest fidelity is spin-to-charge conversion via singlet-triplet spin blockade, which can be detected in-situ using gate-based dispersive sensing. In systems with a complex energy spectrum, like silicon quantum dots, accurately identifying when singlet-triplet blockade occurs is hence of major importance for scalable qubit readout. In this work, we present a description of spin blockade physics in a tunnel-coupled silicon double quantum dot defined in the corners of a split-gate transistor. Using gate-based magnetospectroscopy, we report successive steps of spin blockade and spin blockade lifting involving spin states with total spin angular momentum up to $S=3$. More particularly, we report the formation of a hybridized spin quintet state and show triplet-quintet and quintet-septet spin blockade. This enables studies of the quintet relaxation dynamics from which we find $T_1 \sim 4 ~μs$. Finally, we develop a quantum capacitance model that can be applied generally to reconstruct the energy spectrum of a double quantum dot including the spin-dependent tunnel couplings and the energy splitting between different spin manifolds. Our results open for the possibility of using Si CMOS quantum dots as a tuneable platform for studying high-spin systems.

cond-mat.mes-hall↗