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Namsung Kim

Publications and source records attributed to Namsung Kim.

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Understanding System Characteristics of Online Erasure Coding on Scalable, Distributed and Large-Scale SSD Array Systems

Large-scale systems with arrays of solid state disks (SSDs) have become increasingly common in many computing segments. To make such systems resilient, we can adopt erasure coding such as Reed-Solomon (RS) code as an alternative to replication because erasure coding can offer a significantly lower storage cost than replication. To understand the impact of using erasure coding on system performance and other system aspects such as CPU utilization and network traffic, we build a storage cluster consisting of approximately one hundred processor cores with more than fifty high-performance SSDs, and evaluate the cluster with a popular open-source distributed parallel file system, Ceph. Then we analyze behaviors of systems adopting erasure coding from the following five viewpoints, compared with those of systems using replication: (1) storage system I/O performance; (2) computing and software overheads; (3) I/O amplification; (4) network traffic among storage nodes; (5) the impact of physical data layout on performance of RS-coded SSD arrays. For all these analyses, we examine two representative RS configurations, which are used by Google and Facebook file systems, and compare them with triple replication that a typical parallel file system employs as a default fault tolerance mechanism. Lastly, we collect 54 block-level traces from the cluster and make them available for other researchers.

cs.DC

Enhanced high-temperature performance of GaN light-emitting diodes grown on silicon substrates

We compare the temperature dependence of optical and electrical characteristics of commercially available GaN light-emitting diodes (LEDs) grown on silicon and sapphire substrates. Contrary to conventional expectations, LEDs grown on silicon substrates, commonly referred to as GaN-on-Si LEDs, show less efficiency droop at higher temperatures even with more threading dislocations. Analysis of the junction temperature reveals that GaN-on-Si LEDs have a cooler junction despite sharing identical epitaxial structures and packaging compared to LEDs grown on sapphire substrates. We also observe a decrease in ideality factor with increase in ambient temperature for GaN-on-Si LEDs, indicating an increase in ideal diode current with temperature. Analysis of the strain and temperature coefficient measurements suggests that there is an increase in hole transport efficiency within the active region for GaN-on-Si LEDs compared to the LEDs grown on sapphire, which accounts for the less temperature-dependent efficiency droop.

cond-mat.mtrl-sci