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Nannan Luo

Publications and source records attributed to Nannan Luo.

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Negative Refraction of Terahertz Phonons via Interfacial Momentum Compensation

Negative refraction provides a route to steer and focus wave energy flow, but it remains difficult to realize for coherent terahertz (THz) phonons. The difficulty stems from conventional dispersion-based mechanisms, which require strongly anisotropic or negative-curvature dispersions, while the long-wavelength acoustic phonons most favorable for coherent transport are nearly isotropic. Here we overcome this limitation by introducing a momentum compensation mechanism mediated by discrete translational symmetry. Discrete translational symmetry parallel to the interface supplies a compensating tangential momentum, reopening transmitted channels beyond the conventional critical condition and enabling negative refraction when this compensation reverses the tangential component. Mode-resolved calculations for hBN/graphene heterostructures establish this mechanism in laterally stitched in-plane interfaces and show how twisted van der Waals moire superlattices shift the negative-refraction window to lower frequencies. These results identify periodic crystalline interfaces as symmetry-engineered elements for THz phonon momentum conversion and wavefront control.

cond-mat.mes-hall

Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors.

cond-mat.mtrl-sci