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Narges Dalvand

Publications and source records attributed to Narges Dalvand.

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Phase-aware Inverse Design for Silicon Photonic Logic Gates

Inverse design has emerged as a powerful strategy for realizing compact photonic devices; however, its application to logic operations remains constrained by challenges in physical interpretability, architectural generality, and experimental validation. This work introduces an experimentally validated, unified, and physics-driven inverse design framework that implements all fundamental Boolean logic gates within a single silicon photonic architecture. Devices are fabricated within a 2 x 2 um^2 design region on a silicon-on-insulator platform, representing one of the smallest areas reported for photonic logic elements. By integrating amplitude, phase, and energy conservation into a composite figure of merit, the proposed approach enables direct control over constructive and destructive interference. Consequently, all logic functions, including XOR and three-input NAND/NOR operations, are achieved using a standardized configuration with two logical inputs and a bias port. Experimental results exhibit good agreement with numerical simulations across the C-band, confirming both the predictive accuracy and fabrication robustness of the method. Performance benchmarking reveals competitive contrast ratios compared to previous implementations, while providing a unified and scalable design strategy. These findings establish a physically interpretable and experimentally validated paradigm for inverse-designed photonic logic, advancing the development of compact, integrated optical computing systems.

physics.optics

Integrated Silicon Nitride Devices via Inverse Design

Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive index contrast of SiN is often considered a limitation for creating compact and efficient devices. Here, we present three freeform SiN devices-a coarse wavelength-division multiplexer, a five-mode mode-division multiplexer, and a polarization beam splitter-while systematically benchmarking both the design capability and the fabrication repeatability and robustness of inverse-designed components. We demonstrate up to a 1200x reduction in footprint while maintaining relatively large minimum feature sizes of up to 160 nm, showing that inverse-designed SiN devices can be as compact as their silicon counterparts. These results enable high-density integration in SiN photonics and pave the way for multidimensional data transmission and quantum applications, as the inverse design technique can be applied to different SiN thicknesses and is potentially extendable to other low- and mid-index platforms.

physics.optics