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Naseem Bouchhar

Publications and source records attributed to Naseem Bouchhar.

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Overview of the ALICE ITS3 Upgrade

The ALICE experiment will replace its three innermost tracking layers with the Inner Tracking System 3 (ITS3) during LHC Long Shutdown 3. This upgrade introduces the first fully cylindrical, wafer-scale silicon vertex detector, utilising Monolithic Active Pixel Sensors (MAPS) fabricated in a 65nm CMOS process. By thinning sensors to 50$\mu$m and bending them to radii as small as 19mm, the design achieves a self-supporting structure that eliminates traditional support material. Wafer-scale stitching enables 27cm-long seamless sensors with integrated power and signal distribution, removing the need for flexible printed circuits within the active volume. These innovations, combined with a move from water to air cooling, reduce the material budget to less than 0.09%X$_0$ per layer. The R&D program has been validated through full-scale prototypes (MOSS, MOST), which demonstrated stitching feasibility, high yield, and radiation hardness. Engineering models confirmed the feasibility of air-convection cooling, indicating effective thermal management and structural stability. This contribution summarises the key advances in stitched sensor development, mechanical integration, and the path toward the final qualification model.

physics.ins-det

Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: the monolithic stitched sensor (MOSS)

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026-2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 $\times$ 25.9 cm, thinned to 50 $\mu$m. The chip architecture, in-pixel front-end, laboratory and in-beam characterisation, susceptibility to single-event effects, and series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development.

physics.ins-det