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Natalia V. Alexeeva

Publications and source records attributed to Natalia V. Alexeeva.

4 recordsLinked to original sources

Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice

Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to investigate high-frequency phenomena induced by the Bragg reflections and negative differential velocity of the miniband electrons. Effects of parametric gain in the superlattices at different strengths of dissipation have been earlier discussed in a number of theoretical works, but their experimental demonstrations are so far absent. Here, we report on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice subjected to a dc bias and a microwave pump. We argue that the dissipative parametric mechanism originates from a periodic variation of the negative differential velocity. It enforces excitation of slow electrostatic waves in the superlattice which provide a significant enhancement of the gain coefficient. This work paves the way for a development of a miniature solid-state parametric generator of GHz\nobreakdash--THz frequencies operating at room temperature.

cond-mat.mes-hall

Terahertz Bloch oscillator with a modulated bias

Electrons performing Bloch oscillations in an energy band of a dc-biased superlattice in the presence of weak dissipation can potentially generate THz fields at room temperature. The realization of such Bloch oscillator is a long-standing problem due to the instability of a homogeneous electric field in conditions of negative differential conductivity. We establish the theoretical feasibility of stable THz gain in a long superlattice device in which the bias is quasistatically modulated by microwave fields. The modulation waveforms must have at least two harmonics in their spectra.

cond-mat.mes-hall

THz parametric gain in semiconductor superlattices in the absence of electric domains

We theoretically show that conditions for THz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an unbiased high-frequency electric field on a superlattice causes a periodic variation of energy and effective mass of miniband electrons. This parametric effect can result in a significant gain at some even harmonic of the pump frequency without formation of electric domains and corruption from pump harmonics.

cond-mat.mes-hall

Suppressed absolute negative conductance and generation of high-frequency radiation in semiconductor superlattices

We show that space-charge instabilities (electric field domains) in semiconductor superlattices are the attribute of absolute negative conductance induced by small constant and large alternating electric fields. We propose the efficient method for suppression of this destructive phenomenon in order to obtain a generation at microwave and THz frequencies in devices operating at room temperature. We theoretically proved that an unbiased superlattice with a moderate doping subjected to a microwave pump field provides a strong gain at third, fifth, seventh, etc. harmonics of the pump frequency in the conditions of suppressed domains.

cond-mat.mes-hall