arXiv subjects

Natalie D. Foster

Publications and source records attributed to Natalie D. Foster.

4 recordsLinked to original sources

arXiv2026

Predicting the Slow Drift of Nuclear Spin Noise in Semiconductor Spin Qubits

The dynamics of a nuclear spin bath generates magnetic noise that is a key contributor to the decoherence of electron spin qubits in electrostatically-defined quantum dots. In this paper, we extend the cluster correlation expansion (CCE) technique, which has proven useful for predicting solid-state qubit coherence times across various settings but is limited to shorter time scales, to incorporate stochastic treatments of cluster dynamics in order to efficiently predict slow drifting Overhauser fields over longer time scales. This approach combines quantum evolution with classical rate matrices to enable simulation across a wide range of temporal regimes required to simulate, for example, the long-time convergence of the ergodic $T_2^*$ from Ramsey experiments. Our methodology is validated against experimental data from various silicon spin qubit systems, demonstrating a strong agreement between simulation and measurement of Ramsey experiments presented in the form of $T_2^*$ versus averaging time, autocorrelation functions, as well as power spectral densities. Furthermore, we demonstrate significant back-action effects through modeling and experiment; specifically, the dynamics of the nuclear spin bath depends upon the electron spin occupation schedule. Finally, our modeling quantitatively predicts the benefits from compensating for the slow drift of Overhauser fields in qubit operations. Our findings indicate that compensating for an Overhauser rotation measured $\Delta t$ in the past results in an effective $T_2^*$, which we denote $\tilde{T}_2^*(\Delta t)$ for clarity, under certain scenarios of interest, can be one or two orders of magnitude larger than the ergodic $T_2^*$ if the Overhauser rotation is re-characterized every 100 milliseconds; that is, $\tilde{T}_2^*(\Delta t = 100~{\rm ms})$ can be $10$ to $100$ times larger than $T_2^*$.

cond-mat.mes-hall↗

arXiv2026

Anisotropic spin-valley coupling in SiMOS and Si/SiGe quantum dots

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for electron spin qubit performance, as intravalley and intervalley SOC can significantly perturb the operation of electron spin qubits. While these interactions can be harnessed to drive coherent rotations in a singlet-triplet qubit, coupling to low-lying excited valley states can lead to undesirable spin relaxation when valley splitting is on resonance with the Zeeman energy. In this work, we measure the angular dependence of the interfacial spin-orbit interaction as a function of the direction and magnitude of an applied external magnetic field in SiMOS and Si/SiGe heterostructures, two common material platforms for silicon spin qubits. We construct a physical model that accurately infers intra- and inter-valley SOC physics from fits to the data, allowing for a direct comparison between these two material systems. For the devices measured we find that, while the $g$-factor differences are comparable, the SiMOS QDs exhibit an order of magnitude larger spin-valley coupling than for Si/SiGe. Moreover, we find that the angular dependence of the spin-valley coupling is similar for both devices, with similar magnetic field orientations minimizing the spin-valley coupling. Our work points towards operational schemes for optimizing spin-valley coupling to avoid or exploit this mechanism for qubit operation.

cond-mat.mes-hall↗

arXiv2024

Dephasing and error dynamics affecting a singlet-triplet qubit during coherent spin shuttling

Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving a long-range interaction is by coherent electron spin shuttling through an array of silicon quantum dots. In order to execute many shuttling operations with high fidelity, it is essential to understand the dynamics of qubit dephasing and relaxation during the shuttling process in order to mitigate them. However, errors arising after many repeated shuttles are not yet well documented. Here, we probe decay dynamics contributing to dephasing and relaxation of a singlet-triplet qubit during coherent spin shuttling over many $N$ repeated shuttle operations. We find that losses are dominated by magnetic dephasing for small $N<10^3$ and by incoherent shuttle errors for large $N>10^3$. Additionally, we estimate shuttle error rates below $1\times10^{-4}$ out to at least $N=10^3$, representing an encouraging figure for future implementations of spin shuttling to entangle distant qubits.

cond-mat.mes-hall↗

arXiv2022

Thermal activation of low-density Ga implanted in Ge

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of rapid thermal anneal temperature and implant density. We show that for our implant conditions the activation is best for anneal temperatures between 400 and 650 $^\circ$C, with a maximum activation of 64% at the highest fluence. Below 400 $^\circ$C, remaining implant damage results in defects that act as superfluous carriers, and above 650 $^\circ$C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 64% as the implant fluence increased from $6\times10^{10}$ to $6\times10^{12}$ cm$^{-2}$. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.

cond-mat.mtrl-sci↗