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Nathan D. Orloff

Publications and source records attributed to Nathan D. Orloff.

4 recordsLinked to original sources

Nonlinear Characterization of Thin-Film LiNbO3 Acoustic Filters

Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promising mmWave platforms, first-order antisymmetric (A1) mode laterally excited bulk acoustic resonators (XBARs) in thin-film lithium niobate (LiNbO3) have perhaps the most impressive linear performance. Despite these advances, there are few reports of nonlinear characterization of LiNbO3 filters at mmWaves. Here, we address this gap by developing a new nonlinear methodology for high-frequency filters. The result is a methodology for performing power-dependent S-parameters and third-order intermodulation (IMD3) measurements. To test our methodology, we fabricated filters on transferred single-crystal LiNbO3 films on sapphire (Al2O3) and silicon (Si) substrates with amorphous silicon (aSi) sacrificial layer. At 21.8 GHz, the filters on Al2O3 demonstrated an insertion loss of 1.48 dB, a 3 dB fractional bandwidth (FBW) of 17.7%, and in-band third-order input intercept points (IIP3) of 50.8 dBm. At 21.6 GHz, the filters on silicon demonstrated an insertion loss of 2.47 dB, a 3 dB FBW of 18.6%, and in-band IIP3 of 46.5 dBm. The nonlinear results conclusively show that thermal stability and passband distortion improved on the Al2O3 substrate, confirming that substrate selection plays a pivotal role in mitigating nonlinearity in acoustic front-end modules.

eess.SP

Emergence of millimeter-wave resonances in self-assembled ferroelectric metamaterials

Resonators are a key component in modern communications and computing. As demand and technological advances push component requirements into the terahertz regime, there is significant research devoted to the search for resonances at these frequencies. While uniform solid-state materials usually do not intrinsically feature resonances in this frequency range, self-assembled periodic arrays of ferroelectric nanodomains may provide an engineering route to design millimeter-wave properties. Here, we utilize prototypical dielectric-ferroelectric SrTiO3/PbTiO3 superlattices to robustly design periodic ferroelectric nano-scale domains. Phase field simulations predict an emergent domain breathing mode in complex polar textures and state-of-the-art millimeter-wave characterization shows evidence for such emergent resonances up to hundreds of GHz. Complex polar textures in these superlattices lead to emergent piezoelectric properties that also result in millimeter-wave resonances, which are predicted by second principles methods and confirmed by direct measurement. The principles investigated in this work suggest a new modality for ferroelectrics in the design of millimeter-wave electronics.

cond-mat.mtrl-sci

Breaking symmetry to create a parallel-plate varactor dielectric with unparalleled microwave performance

Voltage-tunable capacitors (varactors) are key to microwave circuits. Tunable dielectric varactors outperform competing technologies in almost every relevant metric but usually suffer from high dielectric loss. In contrast, Ruddlesden-Popper (RPs) dielectric thin films have remarkably low microwave loss. Unfortunately, their crystallographic symmetry has until recently dictated an in-plane device structure, precluding the favorable out-of-plane parallel-plate varactor design for minimized size and maximized electric field in the tunable dielectric. Guided by theory, we report RPs akin to the widely studied tunable microwave dielectric BaxSr1-xTiO3. Assembling these same atoms into the first RP phase with broken out-of-plane symmetry, we achieve a low-loss, out-of-plane tunable dielectric thin film. The highest performing film, (ATiO3)nAO film with A = Ba0.45Sr0.55 and n = 8, unlocks a tenfold improvement in the figure of merit for out-of-plane tunable dielectrics at 10 GHz, paving the way for a new generation of tunable monolithic microwave integrated circuits.

cond-mat.mtrl-sci

Acoustic resonators above 100 GHz

Piezoelectric resonators are a common building block for signal processing because of their miniature size, low insertion loss, and high quality factor. As consumer electronics push to millimeter waves frequencies, designers must increase the operating frequency of the resonator. The current state-of-the-art approach to increase the operating frequency is to decrease the thickness of the piezoelectric film to shorten the acoustic wavelength or to use higher order modes. Unfortunately, maintaining high crystal quality typically requires thicker piezoelectric layers. Thinner layers suffer from higher defect densities and increased surface damping, which degrade the electromechanical coupling and quality factor. While acoustic high order modes can also increase operating frequency, the electromechanical coupling rapidly decreases with increasing mode number. Here, we overcome these limitations by utilizing a piezoelectric stack of three layers of lithium niobate with alternating crystallographic orientations to preferentially support higher order modes and thereby enhance the electromechanical coupling without degrading the quality factor. Our approach improves the figure of merit of millimeter-wave acoustic resonators by roughly an order of magnitude greater compared to state-of-the-art piezoelectric resonators above 60 GHz. This concept of alternating crystallographic orientations facilitates a new path to develop millimeter wave resonators with high figures of merit, low insertion loss, and miniature footprints, enabling new applications in millimeter wave signal processing and computing.

physics.app-ph