arXiv subjects

Nathaniel Findling

Publications and source records attributed to Nathaniel Findling.

3 recordsLinked to original sources

arXiv2026

Spin-wave softening across the uniform-to-stripe domain transition in iron garnet film

Spin-wave spectra across transitions between uniform and textured phases can offer deep insight into both symmetry-breaking physics and self-assembled magnonic bands. However, experiments require a material platform that combines low damping, well-defined textures, and spectroscopic access. Here, we study a Bi-doped iron-garnet film with perpendicular magnetic anisotropy (PMA), which undergoes a uniform-to-stripe-domain transition as a function of in-plane magnetic field. Real-space imaging by magnetic force microscopy reveals field-reorientable stripe domains aligned with the in-plane field, while reciprocal-space measurements using thermal microfocused Brillouin light scattering ($\mu$-BLS) reveal the softening of a low-frequency spin-wave branch near the transition and the appearance of additional modes in the stripe-domain state. Calculated dispersion relations identify finite-$k$ softening in the Damon-Eshbach geometry ($k \perp M$), with the corresponding wavelength matching the stripe periodicity at the transition. In addition, a $\mu$-BLS spectral model reproduces the measured mode frequencies and relative intensities at selected fixed fields. Micromagnetic simulations capture the field-driven formation of the stripe state and reproduce the experimental thermal $\mu$-BLS spectra. Our findings establish BiYIG with PMA as a model low-damping platform for studying spin-wave freezing, stripe-domain modes, and reconfigurable magnonic band structures.

cond-mat.mes-hall↗

arXiv2024

On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact

The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.

cond-mat.mtrl-sci↗

arXiv2023

Ferroelectricity in tetragonal ZrO$_2$ thin films

We report on the crystal structure and ferroelectric properties of epitaxial ZrO$_2$ films ranging from 7 to 42 nm thickness grown on La$_{0.67}$Sr$_{0.33}$MnO$_3$-buffered (110)-oriented SrTiO$_3$ substrate. By employing X-ray diffraction, we confirm a tetragonal phase at all investigated thicknesses, with slight in-plane strain due to the substrate in the thinnest films. Further confirmation of the tetragonal phase was obtained through Infrared absorption spectroscopy with synchrotron light, performed on ZrO$_2$ membrane transferred onto a high resistive Silicon substrate. Up to a thickness of 31 nm, the ZrO$_2$ epitaxial films exhibit ferroelectric behavior, at variance with the antiferroelectric behavior reported previously for the tetragonal phase in polycrystalline films. However, the ferroelectricity is found here to diminish with increasing film thickness, with a polarization of about 13 $\mu$C.cm$^{-2}$ and down to 1 $\mu$C.cm$^{-2}$ for 7 nm and 31 nm-thick ZrO$_2$ films, respectively. This highlights the role of thickness reduction, substrate strain, and surface effects in promoting polarization in the tetragonal ZrO$_2$ thin films. These findings provide new insights into the ferroelectric properties and structure of ZrO$_2$ thin films, and open up new directions to investigate the origin of ferroelectricity in ZrO$_2$ and to optimize this material for future applications.

cond-mat.mtrl-sci↗