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Nathaniel J. Huáng

Publications and source records attributed to Nathaniel J. Huáng.

2 recordsLinked to original sources

Revealing antenna-molecule coupling using virtual gain from synthetic complex frequency analysis

Synthetic complex frequency waves (CFWs) enhance spectral and spatial resolution by compensating loss through virtual gain. This approach is particularly useful in nano-photonics where loss is intrinsically linked to strong field confinement and system size. Here, we apply CFWs to metasurfaces composed of Fano-resonant plasmonic antennas with lithographically tunable coupling between the weak and strong coupling regimes and where loss may be reduced to the Drude damping limit. We quantitatively assess the impact of the virtual gain to find that, while reducing loss, internal coupling rates remain invariant. While the exceptional point associated with strong light-matter coupling is invariant under virtual gain, the cooperativity of Fano interference is enhanced. When the metasurfaces are functionalised with a molecular monolayer, CFWs are thus able to reveal a molecule's vibrational modes, even when obscured by loss, and allow direct extraction of the plasmon-molecule coupling strength. We thus use CFW analysis as a quantitative tool for revealing and assessing light matter-coupling.

physics.optics↗

Quantum anomalous Hall effect for metrology

The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges -- among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path towards an QAHE resistance standard realized in magnetically doped (Bi,Sb)$_2$Te$_3$ systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges as well as modern strategies to overcome them.

cond-mat.mes-hall↗