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Negar Ashari Astani

Publications and source records attributed to Negar Ashari Astani.

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Quantum-Inspired Ising Machines for Quantum Chemistry Calculations

Four decades after Richard Feynman's famous remark, we have reached a stage at which nature can be simulated quantum mechanically. Quantum simulation is among the most promising applications of quantum computing. However, like many quantum algorithms, it is severely constrained by noise in near-term hardware. Quantum-inspired algorithms provide an attractive alternative by avoiding the need for error-prone quantum devices. In this study, we demonstrate that the coherent Ising machine and simulated bifurcation algorithms can accurately reproduce the electronic energy profiles of H_2 and H_2O, capturing their essential energetic features. Notably, we obtain computational times of 1.2 s and 2.4 s for the H_2 and H_2O profiles, respectively, representing a substantial speed-up compared to gate-based quantum computing approaches, which typically require at least 6 s to compute a single molecular geometry with comparable accuracy. These results highlight the potential of quantum-inspired approaches for scaling to larger molecular systems and for future applications in chemistry and materials science.

quant-ph

Valence and conduction bands engineering in halide perovskites for solar cell applica- tions

We performed ab initio simulations aimed at identifying the atomistic and electronic structure origin of the high valence and conduction band, and band gap tunability of halide perovskites. We found that the two key ingredients are the overlap between bivalent cation and halide atomic orbitals, and the electronic charge of the bottom of the conduction band (CBM) state on the Sn or Pb atoms. In particular, we found that lower gaps are associated to higher negative antibonding overlap, and higher CBM charge on the bivalent cation. Both overlap and CBM charge on Sn/Pb can be tuned by the chemical nature of halide, bi and monovalent cation, as well as the symmetry of crystal structure. On the basis of our results we provide some practical rules to tune the valence band maximum, conduction band minimum, and band gap in this class of materials.

cond-mat.mtrl-sci