arXiv subjects

Neil Moffat

Publications and source records attributed to Neil Moffat.

4 recordsLinked to original sources

arXiv2025

Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation

We present the design and simulation of a 30 $\mathrm{\mu m}$ thick 4H-SiC Low Gain Avalanche Diode (LGAD) optimized for high-voltage operation. A 2.4 $\mathrm{\mu m}$ thick epitaxially grown gain layer enables controlled internal amplification up to 1 kV reverse bias, while maintaining full depletion below 500 V. Electrical characteristics, including I-V, C-V, and gain behavior, were simulated in Synopsys Sentaurus Technology Computer-Aided Design (TCAD) using a quasi-1D geometry and verified across process-related variations in gain layer parameters. To ensure high-voltage stability and proper edge termination, a guard structure combining deep etched trenches and deep $p^+$ junction termination extension (JTE) implants was designed. TCAD simulations varying the guard structure dimensions yielded an optimized design with a breakdown voltage above 2.4 kV. A corresponding wafer run is currently processed at IMB-CNM, Barcelona.

physics.ins-det↗

arXiv2024

Laboratory and beam-test performance study of a 55$~\mu$m pitch iLGAD sensor bonded to a Timepix3 readout chip

This contribution reports on characterisation results of a large-area (2$~\mathrm{cm}^2$) small pitch (55$~\mu$m) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. The ilGAD sensors were produced by Micron Semiconductor Ltd with the goal to obtain good gain uniformity and maximise the fill-factor -- an issue present with standard small-pitch LGAD designs. We have conducted detailed performance evaluations using both X-ray calibrations and beam tests. An X-ray fluorescence setup has been used to obtain energy calibration and to identify the optimal operating settings of the new devices, whereas the extensive beam tests allowed for a detailed evaluation of the detector performance. The beam-tests were performed at the CERN SPS North Area H6 beamline, using a 120 GeV/c pion beam. The reference tracking and time-stamping is achieved by a Timepix3-based beam telescope setup. The results show a gain of around 5 with very good uniformity, measured across the whole gain area, as well as a hit time resolution down to 1.3 ns without correcting for the time-walk effects. Furthermore, it is shown that the gain opens the possibility of a good X-ray energy resolution down to 4.5 keV.

physics.ins-det↗

arXiv2022

Overview of CNM LGAD results: Boron Si-on-Si and epitaxial wafers

Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. The moderate gain of these sensors, together with the relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate the effect of pile-up at the HL-LHC the ATLAS and CMS experiments have chosen the LGAD technology for the High Granularity Timing Detector (HGTD) and for the End-Cap Timing Layer (ETL), respectively. A full characterization of recent productions of LGAD sensors fabricated at CNM has been carried out before and after neutron irradiation up to 2.5 $\times$ 10$^{15}$ n$_{eq}$/cm$^{2}$ . Boron-doped sensors produced in epitaxial and Si-on-Si wafers have been studied. The results include their electrically characterization (IV and bias voltage stability) and performance studies (charge and time resolution) for single pad devices with a Sr-90 radioactive source set-up. The behaviour of the Inter-Pad region for irradiated 2 $\times$ 2 LGAD arrays, using the Transient Current Technique (TCT), is shown. The results indicate that the Si-on-Si devices with higher resistivity perform better than the epitaxial ones.

physics.ins-det↗

arXiv2022

First Results for the pLGAD Sensor for Low-Penetrating Particles

Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have been developed for applications in High Energy Physics, but lack two characteristics needed for the measurement of low-energy protons (<60 keV): a thin entrance window (in the order of tens of nm) and the efficient amplification of signals created near the sensor's surface (in a depth below 1 um). In this paper we present the so-called proton Low Gain Avalanche Detector (pLGAD) sensor concept and some results from characterization of the first prototypes of the sensor. The pLGAD is specifically designed to detect low-energy protons, and other low-penetrating particles. It will have a higher detection efficiency than non-silicon technologies, and promises to be a lot cheaper and easier to operate than competing silicon technologies.

physics.ins-det↗