arXiv subjects

Nesta Benno Joseph

Publications and source records attributed to Nesta Benno Joseph.

9 recordsLinked to original sources

arXiv2025

Berry Curvature Dipole-induced Non-linear Hall Effect in Oxide Heterostructures

The observation of non-linear Hall effects in time-reversal invariant systems has established the intriguing role of band topology beyond Berry curvature in determining transport phenomena. Many of these non-linear responses owe their origin to the Berry curvature dipole (BCD), which, like the Berry curvature (monopole), is also an electronic band structure effect, but is routinely strongly constrained by crystalline symmetries. Here, we propose non-centrosymmetric transition metal oxide heterostructures as promising platforms for realizing and tuning BCD-induced non-linear Hall effects. Specifically, we investigate superlattices of the form $(\mathrm{Ba(Os,Ir)}\mathrm{O}_3)_n/(\mathrm{BaTiO}_3)_4$ ($n{=}1, 2$), comprising metallic perovskite layers ($\mathrm{BaOsO_3}$ or $\mathrm{BaIrO_3}$) sandwiched between insulating ferroelectric $\mathrm{BaTiO_3}$ (BTO). The ferroelectric distortion in BTO breaks inversion symmetry of the superlattice, giving rise to a finite BCD with two symmetry-allowed components of equal magnitude and opposite sign. Our first-principles calculations demonstrate that the magnitude of the BCD -- and consequently the nonlinear Hall response -- can be effectively tuned by varying the number of metallic layers or the choice of the B-site cation in these $\mathrm{ABO_3}$ perovskites. Since Rashba splitting and ferroelectric distortion in these systems are readily controllable via an external electric field or strain, the non-linear Hall response in these materials can be directly engineered. Our findings establish non-centrosymmetric oxide perovskite heterostructures as a versatile platform for exploring and manipulating BCD-driven non-linear transport phenomena.

cond-mat.mtrl-sci↗

arXiv2024

Chirality-tunable non-linear Hall effect

The non-linear generalization of the Hall effect has recently gained much attention, with a rapidly growing list of non-centrosymmetric materials that display higher-order Hall responses under time-reversal invariant conditions. The intrinsic second-order Hall response arises due to the first-order moment of Berry curvature -- termed Berry curvature dipole -- which requires broken inversion and low crystal symmetries. Chiral materials are characterized by their lack of improper symmetries such as inversion, mirror plane, and roto-inversion. Owing to this absence of symmetries, in this work, we propose chiral systems as ideal platforms to study the Berry curvature dipole-induced non-linear Hall effects. We use state-of-the-art first-principles computations, in conjunction with symmetry analyses, to explore a variety of chiral material classes -- metallic \ch{NbSi2}, semiconducting elemental Te, insulating HgS, and topological multifold semimetal CoSi. We present the emergence and tunability of the Berry curvature dipole in these chiral materials. In particular, we demonstrate that the two enantiomeric pairs exhibit an exactly opposite sign of the Berry curvature dipole. We complement our \textit{ab initio} findings with a general tight-binding minimal model and give estimates for non-linear Hall voltages, which are experimentally accessible. Our predictions put forward chiral materials as an emerging class of materials to realize non-linear Hall phenomena and highlight an as-yet-unexplored aspect of these systems.

cond-mat.mtrl-sci↗

arXiv2024

Non-linear Hall Effects: Mechanisms and Materials

This review presents recent breakthroughs in the realm of nonlinear Hall effects, emphasizing central theoretical foundations and recent experimental progress. We elucidate the quantum origin of the second-order Hall response, focusing on the Berry curvature dipole, which may arise in inversion symmetry broken systems. The theoretical framework also reveals the impact of disorder scattering effects on the nonlinear response. We further discuss the possibility of obtaining nonlinear Hall responses beyond the second order. We examine symmetry-based indicators essential for the manifestation of nonlinear Hall effects in time-reversal symmetric crystals, setting the stage for a detailed exploration of theoretical models and candidate materials predicted to exhibit sizable and tunable Berry curvature dipole. We summarize groundbreaking experimental reports on measuring both intrinsic and extrinsic nonlinear Hall effects across diverse material classes. Finally, we highlight some of the other intriguing nonlinear effects, including nonlinear planar Hall, nonlinear anomalous Hall, and nonlinear spin and valley Hall effects. We conclude with an outlook on pivotal open questions and challenges, marking the trajectory of this rapidly evolving field.

cond-mat.mes-hall↗

arXiv2024

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov-de Haas oscillations from Fermi surfaces, indicating highly coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity.

cond-mat.str-el↗

arXiv2023

Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene

The emergence of the fascinating non-linear Hall effect intrinsically depends on the non-zero value of the Berry curvature dipole. In this work, we predict that suitable strain engineering in layered van der Waals material phosphorene can give rise to a significantly large Berry curvature dipole. Using symmetry design principles, and a combination of feasible strain and staggered on-site potentials, we show how a substantial Berry curvature dipole may be engineered at the Fermi level. We discover that monolayer phosphorene exhibits the most intense Berry curvature dipole peak near 11.8% strain, which is also a critical point for the topological phase transition in pristine phosphorene. Furthermore, we have shown that the necessary strain value to achieve substantial Berry curvature dipole can be reduced by increasing the number of layers. We have revealed that strain in these van der Waals systems not only alters the magnitude of Berry curvature dipole to a significant value but allows control over its sign. We are hopeful that our predictions will pave way to realize the non-linear Hall effect in such elemental van der Waals systems.

cond-mat.mes-hall↗

arXiv2023

Electrically switchable giant Berry curvature dipole in silicene, germanene and stanene

The anomalous Hall effect in time-reversal symmetry broken systems is underpinned by the concept of Berry curvature in band theory. However, recent experiments reveal that the nonlinear Hall effect can be observed in non-magnetic systems without applying an external magnetic field. The emergence of nonlinear Hall effect under time-reversal symmetric conditions can be explained in terms of non-vanishing Berry curvature dipole arising from inversion symmetry breaking. In this work, we availed realistic tight-binding models, first-principles calculations, and symmetry analyses to explore the combined effect of transverse electric field and strain, which leads to a giant Berry curvature dipole in the elemental buckled honeycomb lattices -- silicene, germanene, and stanene. The external electric field breaks the inversion symmetry of these systems, while strain helps to attain an asymmetrical distribution of Berry curvature of a single valley. Furthermore, the topology of the electronic wavefunction switches from the band inverted quantum spin Hall state to normal insulating one at the gapless point. This band gap closing at the critical electric field strength is accompanied by an enhanced Berry curvature and concomitantly a giant Berry curvature dipole at the Fermi level. Our results predict the occurrence of an electrically switchable nonlinear electrical and thermal Hall effect in a new class of elemental systems that can be experimentally verified.

cond-mat.mes-hall↗

arXiv2023

Tunable Topology and Berry Curvature Dipole in Transition Metal Dichalcogenide Janus Monolayers

Janus transition metal dichalcogenides, with intrinsic mirror asymmetry, exhibit a wide array of interesting properties. In this work, we study Janus monolayers derived from WTe$_2$ using first-principles and tight-binding calculations. We discover that WSeTe and WSTe are topologically trivial, in contrast to the parent quantum spin Hall insulator WTe$_2$. Motivated by the growing interest in non-linear Hall effect, which also requires asymmetric structures, we investigate the Berry curvature and its dipole in these Janus systems and find that they exhibit strikingly large values of Berry curvature dipole, despite being in the topologically trivial phase. We track down the origin of this behaviour and put forth a low-energy massive Dirac model to understand the central features of our ab initio computations. Our predictions introduce Janus monolayers as promising new platforms for exploring as well as engineering non-linear Hall effect.

cond-mat.mes-hall↗

arXiv2023

Giant superlinear power dependence of photocurrent based on layered Ta$_2$NiS$_5$ photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. Here, we report the giant superlinear power dependence of photocurrent based on multi-layer Ta$_2$NiS$_5$. While the fabricated photodetector exhibits good sensitivity ($3.1 mS/W$ per square) and fast photoresponse ($31 μ$$s$), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from $1.5 μ$W/$μ$$m^{2}$ to $200 μ$W/$μ$$m^{2}$, the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, a prominent superlinearity is observed with a giant power exponent of $γ=1.5$. The unusual photoresponse can be explained by a two-recombination-center model where the distinct density of states of the recombination centers effectively closes all recombination channels. The fabricated photodetector is integrated into camera for taking photos with enhanced contrast due to the superlinearity. Our work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

physics.app-ph↗

arXiv2021

Topological Properties of Bulk and Bilayer 2M WS$_2$: A First-Principles Study

Recently discovered 2M phase of bulk WS$_2$ was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS$_2$. We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of the $Z_2$ invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS$_2$ as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the W $d$ and S $p$ states. By means of $Z_2$ invariant computations and a calculation of the edge states, we show that bilayer 2M WS$_2$ exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that BCD signals, which are absent in the centrosymmetric bulk 2M WS$_2$, can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.

cond-mat.mtrl-sci↗