arXiv subjects

Ngoc Han Tu

Publications and source records attributed to Ngoc Han Tu.

12 recordsLinked to original sources

arXiv2026

Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic

Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.

cond-mat.mes-hall↗

arXiv2025

High-temperature helical edge states in BiSbTeSe$_2$/graphene van der Waals heterostructure

Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential and the band inversion driven by enhanced spin-orbit interaction (SOI) through band hybridization enables us to realize a two-dimensional topological insulator (2D-TI). Here we report the realization of graphene 2D-TIs by epitaxial growth of three-dimensional topological insulator (3D-TI) BiSbTeSe$_2$ ultrathin films on graphene. By increasing the BiSbTeSe$_2$ thickness from 2 nm to 9 nm to enhance SOI on graphene, the electronic state is altered from the trivial Kekul${é}$ insulator to the 2D-TI. The nonlocal transport reveals the helical edge conduction which survives up to 200 K at maximum. Our graphene 2D-TI is stable, easy to make electrical contacts, and of high quality. It offers various applications including spin-current conversion and platforms for Majorana fermions in junctions to superconductors.

cond-mat.mes-hall↗

arXiv2025

Electrical control of a Kondo spin screening cloud

Quantitative analysis of quantum many-body systems, consisting of numerous itinerant electrons that interact with localized spins or electrons, is a long-standing issue. The Kondo cloud, a quantum many-body object of conduction electrons that screens a single localized spin, is the building block of such strongly correlated electronic systems. While quantitative analysis of the Kondo cloud associated with a single magnetic impurity is well established for uniform conduction electrons, the fundamental properties of a deformed Kondo cloud influenced by conduction electrons with a modulated density of states remain unsolved. Here we report engineering of the Kondo cloud deformation by confining a part of the cloud into a quantum box called the Kondo box that mimics realistic material systems. We demonstrate quantitative control of the Kondo cloud by developing a way of tuning quantum interference in the box and monitoring the Kondo entanglement. The temperature dependence of the entanglement reveals counterintuitively that the cloud shape is altered mainly outside the box although the quantum interference in the box is tuned. Our work provides a way to simulate various strongly correlated systems by integrating the Kondo cloud, which is not possible in the current theoretical framework.

cond-mat.mes-hall↗

arXiv2024

Semiconductor Circuits for Quantum Computing with Electronic Wave Packets

Standard approaches to quantum computing require significant overhead to correct for errors. The hardware size for conventional quantum processors in solids often increases linearly with the number of physical qubits, such as for transmon qubits in superconducting circuits or electron spin qubits in quantum dot arrays. While photonic circuits based on flying qubits do not suffer from decoherence or lack of potential scalability, they have encountered significant challenges to overcome photon loss in long delay circuits. Here, we propose an alternative approach that utilizes flying electronic wave packets propagating in solid-state quantum semiconductor circuits. Using a novel time-bin architecture for the electronic wave packets, hardware requirements are drastically reduced because qubits can be created on-demand and manipulated with a common hardware element, unlike the localized approach of wiring each qubit individually. The electronic Coulomb interaction enables reliable coupling and readout of qubits. Improving upon previous devices, we realize electronic interference at the level of a single quantized mode that can be used for manipulation of electronic wavepackets. This important landmark lays the foundation for fault-tolerant quantum computing with a compact and scalable architecture based on electron interferometry in semiconductors.

cond-mat.mes-hall↗

arXiv2019

Active spatial control of terahertz graphene plasmons by tailoring carrier density profile

Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit.

physics.app-ph↗

arXiv2018

Coupling between Quantum Hall Edge Channels on Opposite Sides of a Hall Bar

We investigate the coupling between quantum Hall (QH) edge channels (ECs) located at opposite sides of a 50-um-wide Hall bar by exciting a charged wavepacket in one EC and detecting time-dependent current in the other EC. In a QH state, the current shows a peak followed by a dip, demonstrating the existence of capacitive coupling across the incompressible two-dimensional electron system (2DES). The observed magnetic field dependence of the amplitude and time delay of the current suggests that the capacitance is affected by the presence of localized states. We also show that the dominant manner of the coupling changes gradually as the system changes between the QH and non-QH states.

cond-mat.str-el↗

arXiv2018

Plasmon Confinement by Carrier Density Modulation in Graphene

We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with their electric field mostly localized in the 1.7- or 6.3-um-wide ribbon arrays. We also show that plasmons are excited only in one of the micro-ribbon arrays when the Fermi energy of the other micro-ribbon array is set close to the charge neutrality point. These results indicate that plasmons can be confined by the carrier density modulation.

cond-mat.str-el↗

arXiv2017

Charge Fractionalization in Artificial Tomonaga-Luttinger Liquids with Controlled Interaction Strength

We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled quantum Hall edge channels (ECs) in graphene. The interaction strength of the artificial TLLs can be controlled through distance W between the ECs. We show that the fractionalization ratio r and the TLL mode velocity v vary with W. The experimentally obtained relation between v and r follows a unique function predicted by the TLL theory. We also show that charged wavepackets are reflected back and forth multiple times at both ends of the TLL region.

cond-mat.str-el↗

arXiv2017

Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition

Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layaers, on mica in a large-area (1 cm2) via catalyst free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well defined quantum oscillations arising from the topological surface states. Carrier mobility of 2500-5100 cm2(Vs)-1 is comparable to the high quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.

cond-mat.mes-hall↗

arXiv2017

Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states

We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity ($σ$), thermal conductivity ($κ$), and thermopower ($S$)) are accurately determined. Pure m-TSDS gives $S$=-44 μVK$^{-1}$, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK$^{-1}$ for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time ($τ$) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time $τ(E)$ beyond the Born approximation is essential for making intrinsic interpretations. Although $σ$ is protected on the m-TSDS, $κ$ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.

cond-mat.mtrl-sci↗

arXiv2016

In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$

A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

cond-mat.mtrl-sci↗

arXiv2014

Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.

cond-mat.mtrl-sci↗