arXiv subjects

Nguyen H. Le

Publications and source records attributed to Nguyen H. Le.

13 recordsLinked to original sources

arXiv2026

Mitigating many-body quantum crosstalk with tensor-network robust control

Quantum crosstalk poses a major challenge to scaling up quantum computations as its strength is typically unknown and its effect accumulates exponentially as system size grows. Here, we show that many-body robust control can be utilized to suppress unwanted couplings during multi-qubit gate operations and state preparation. By combining tensor network simulations with the GRAPE algorithm, and leveraging an efficient random sampling over noise ensembles, our method overcomes the exponential scaling of the Hilbert space. We demonstrate its effectiveness for designing control solutions for high-fidelity implementations of parallel X gates and parallel CNOT on a chain of 50 qubits, and for realizing a 30-qubit GHZ state and the ground state of a 20-qubit Heisenberg model. In the presence of many-body quantum crosstalk due to parasitic interaction between neighboring qubits, robust control results in order-of magnitude improvement in fidelity for large system sizes. These findings pave the way for more reliable operations on near-term quantum processors.

quant-ph↗

arXiv2026

Fast thermal state preparation beyond native interactions

While questions on quantum simulation of ground state physics are mostly focussed on the realization of effective interactions, most work on quantum simulation of thermal physics explores the realization of dynamics towards a thermal mixed state under native interactions. Many open questions that could be answered with quantum simulations, however, involve thermal states with respect to synthetic interactions. We present a framework based solely on unitary dynamics to design quantum simulations for thermal states with respect to Hamiltonians that include non-native interactions, suitable for both present-day digital and analogue devices. By classical means, our method finds the control sequence to reach a target thermal state for system sizes well out of reach of state-vector or density-matrix control methods, even though quantum hardware is required to explicitly simulate the thermal state dynamics. With the illustrative example of the cluster Ising model that includes non-native three-body interactions, we find that required experimental resources, such as the total evolution time, are independent of temperature and criticality.

quant-ph↗

arXiv2025

Amplitude-noise-resilient entangling gates for trapped ions

Noise resilience of quantum information processing is a crucial precondition to reach the fault-tolerance threshold. While resilience to many types of noise can be achieved through suitable control schemes, resilience to amplitude noise seems to be elusive within the common harmonic approximation for the bus mode of trapped ions. We show that weak an-harmonicities admit control schemes that achieve amplitude noise-resilience consistent with state-of-the-art experimental requirements, and that the required an-harmonicities can be achieved with current standards of micro-structured traps or even the intrinsically an-harmonic Coulomb interaction. This approach applies broadly to any platform that employs a bosonic bus as a qubit coupler.

quant-ph↗

arXiv2024

Robust implicit quantum control of interacting spin chains

Robust quantum control can achieve noise-resilience of quantum systems and quantum technological devices. While the need for noise-resilience grows with the number of fluctuating quantities, and thus typically with the number of qubits, most numerically exact optimal control techniques are limited to systems of few interacting qubits. This paper exploits quantum control that avoids explicit reference to quantum states in exponentially large Hilbert space. Exemplary control protocols for spin chains are discussed in terms of noise-resilient preparation of highly entangled states.

quant-ph↗

arXiv2024

Quantum control without quantum states

We show that combining ideas from the fields of quantum invariants and of optimal control can be used to design optimal quantum control solutions without explicit reference to quantum states. The states are specified only implicitly in terms of operators to which they are eigenstates. The scaling in numerical effort of the resultant approach is not given by the typically exponentially growing effort required for the specification of a time-evolved quantum state, but it is given by the effort required for the specification of a time-evolved operator. For certain Hamiltonians, this effort can be polynomial in the system size. We describe how control problems for state preparation and the realization of propagators can be formulated in this approach, and we provide explicit control solutions for a spin chain with an extended Ising Hamiltonian. The states considered for state-preparation protocols include eigenstates of Hamiltonians with more than pairwise interactions, and these Hamiltonians are also used for the definition of target propagators. The cost of describing suitable time-evolving operators grows only quadratically with the system size, allowing us to construct explicit control solutions for up to 50 spins. While sub-exponential scaling is obtained only in special cases, we provide several examples that demonstrate favourable scaling beyond the extended Ising model.

quant-ph↗

arXiv2022

Scalable and robust quantum computing on qubit arrays with fixed coupling

We propose a scheme for scalable and robust quantum computing on two-dimensional arrays of qubits with fixed longitudinal coupling. This opens the possibility for bypassing the device complexity associated with tunable couplers required in conventional quantum computing hardware. Our approach is based on driving a subarray of qubits such that the total multi-qubit Hamiltonian can be decomposed into a sum of commuting few-qubit blocks, and then efficient optimization of the unitary evolution within each block. Each driving pulse can implement a target gate on the driven qubits, and at the same time implement identity gates on the neighbouring undriven qubits, cancelling any unwanted evolution due to the constant qubit-qubit interaction. We show that it is possible to realise a universal set of quantum gates with high fidelity on the basis blocks, and by shifting the driving pattern one can realise an arbitrary quantum circuit on the array. Allowing for imperfect Hamiltonian characterisation, we use robust optimal control to obtain fidelities around 99.99% despite 1% uncertainty in the qubit-qubit and drive-qubit couplings, and a detuning uncertainty at 0.1% of the qubit-qubit coupling strength. This robust feature is crucial for scaling up as parameter uncertainty is significant in large devices.

quant-ph↗

arXiv2021

Robust optimal control of interacting multi-qubit systems for quantum sensing

Realising high fidelity entangled states in controlled quantum many-body systems is challenging due to experimental uncertainty in a large number of physical quantities. We develop a robust optimal control method for achieving this goal in finite-size multi-qubit systems despite significant uncertainty in multiple parameters. We demonstrate its effectiveness in the generation of the Greenberger-Horne-Zeilinger state on a star graph of capacitively coupled transmons, and discuss its crucial role for achieving the Heisenberg limit of precision in quantum sensing.

quant-ph↗

arXiv2021

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

cond-mat.mtrl-sci↗

arXiv2020

Rydberg Entangling Gates in Silicon

In this paper, we propose a new Rydberg entangling gate scheme which we demonstrate theoretically to have an order of magnitude improvement in fidelities and speed over existing protocols. We find that applying this gate to donors in silicon would help overcome the strenuous requirements on atomic precision donor placement and substantial gate tuning, which so far has hampered scaling. We calculate multivalley Rydberg interactions for several donor species using the Finite Element Method, and show that induced electric dipole and Van der Waals interactions, calculated here for the first time, are important even for low-lying excited states. We show that Rydberg gate operation is possible within the lifetime of donor excited states with 99.9% fidelity for the creation of a Bell state in the presence of decoherence.

quant-ph↗

arXiv2020

Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices

Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi-Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk-boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su-Schrieffer-Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain.

cond-mat.mes-hall↗

arXiv2019

Giant non-linear susceptibility of hydrogenic donors in silicon and germanium

Implicit summation is a technique for the conversion of sums over intermediate states in multiphoton absorption and the high-order susceptibility in hydrogen into simple integrals. Here, we derive the equivalent technique for hydrogenic impurities in multi-valley semiconductors. While the absorption has useful applications, it is primarily a loss process; conversely, the non-linear susceptibility is a crucial parameter for active photonic devices. For Si:P, we predict the hyperpolarizability ranges from $χ^{(3)}/n_{\text{3D}}=2.9 $ to $580 \times 10^{-38}$ $\text{m}^5/\text{V}^2$ depending on the frequency, even while avoiding resonance. Using samples of a reasonable density, $n_{\text{3D}}$, and thickness, $L$, to produce third-harmonic generation at 9 THz, a frequency that is difficult to produce with existing solid-state sources, we predict that $χ^{(3)}$ should exceed that of bulk InSb and $χ^{(3)}L$ should exceed that of graphene and resonantly enhanced quantum wells.

cond-mat.mes-hall↗

arXiv2019

Optically Controlled Entangling Gates in Randomly Doped Silicon

Randomly-doped silicon has many competitive advantages for quantum computation; not only is it fast to fabricate but it could naturally contain high numbers of qubits and logic gates as a function of doping densities. We determine the densities of entangling gates in randomly doped silicon comprising two different dopant species. First, we define conditions and plot maps of the relative locations of the dopants necessary for them to form exchange interaction mediated entangling gates. Second, using nearest neighbour Poisson point process theory, we calculate the doping densities necessary for maximal densities of single and dual-species gates. We find agreement of our results with a Monte Carlo simulation, for which we present the algorithms, which handles multiple donor structures and scales optimally with the number of dopants and use it to extract donor structures not captured by our Poisson point process theory. Third, using the moving average cluster expansion technique, we make predictions for a proof of principle experiment demonstrating the control of one species by the orbital excitation of another. These combined approaches to density optimization in random distributions may be useful for other condensed matter systems as well as applications outside physics.

quant-ph↗

arXiv2018

Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wavefunction. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

cond-mat.mes-hall↗