arXiv subjects

Nianjheng Wu

Publications and source records attributed to Nianjheng Wu.

3 recordsLinked to original sources

arXiv2026

Quantum transport reveals spin glass correlations in a 2D network of TbPc$_{2}$ single-molecule magnets grafted on graphene

The low temperature magnetoresistance of graphene functionalized by an array of magnetic Terbium Phthalocyanines molecules is found to exhibit a magnetic field-dependent 1/f noise, along with universal conductance fluctuations (UCFs) typical of a mesoscopic phase-coherent sample. A thorough analysis of the magnetic field, temperature and chemical potential dependence of this 1/f noise and UCFs reveals that long range, 2D Ising spin-glass like, magnetic correlations are induced in graphene through exchange interactions between the magnetic molecules and charge carriers in graphene. These experiments show that graphene functionalized with organic molecules constitutes a versatile platform for the investigation of magnetic phase transitions in two dimensions.

cond-mat.mes-hall↗

arXiv2023

Engineering 2D material exciton lineshape with graphene/h-BN encapsulation

Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.

cond-mat.mes-hall↗

arXiv2022

Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening

The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monolayers are investigated to disentangle the factors contributing to inhomogeneous broadening of exciton absorption lines in TMDs using electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). In addition, monolayer roughness in each configuration was determined from tilt series of electron diffraction patterns by assessing the broadening of diffraction spots by comparison with simulations. From our experiments, the main factors that play a role in linewidth broadening can be classified in increasing order of importance by: monolayer roughness, surface cleanliness, and substrate-induced charge trapping. Furthermore, because high-energy electrons are used as a probe, electron beam-induced damage on bare TMD monolayer is also revealed to be responsible for irreversible linewidth increases. \textit{h}-BN not only provides clean surfaces of TMD monolayer, and minimal charge disorder, but can also protect the TMD from irradiation damage. This work provides a better understanding of the mechanisms by which \textit{h}-BN remains, to date, the most compatible material for 2D material encapsulation, facilitating the realization of intrinsic material properties to their full potential.

cond-mat.mes-hall↗