arXiv subjects

Nicholas C. Plumb

Publications and source records attributed to Nicholas C. Plumb.

24 records · Page 2Linked to original sources

arXiv2017

Observation of a two-dimensional electron gas at CaTiO$_3$ film surfaces

The two-dimensional electron gas at the surface of titanates gathered attention due to its potential to replace conventional silicon based semiconductors in the future. In this study, we investigated films of the parent perovskite CaTiO$_3$, grown by pulsed laser deposition, by means of angular-resolved photoelectron spectroscopy. The films show a c(4x2) surface reconstruction after the growth that is reduced to a p(2x2) reconstruction under UV-light. At the CaTiO$_3$ film surface, a two-dimensional electron gas (2DEG) is found with an occupied band width of 400 meV. With our findings CaTiO$_3$ is added to the group of oxides with a 2DEG at their surface. Our study widens the phase space to investigate strontium and barium doped CaTiO$_3$ and the interplay of ferroelectric properties with the 2DEG at oxide surfaces. This could open up new paths to tailor two-dimensional transport properties of these systems towards possible applications.

cond-mat.mes-hall↗

arXiv2017

A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases

Engineered lattices in condensed matter physics, such as cold atom optical lattices or photonic crystals, can have fundamentally different properties from naturally-occurring electronic crystals. Here, we report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface within the heterostructure hosts a set of topologically-protected interface states, and by making the layers sufficiently thin, we demonstrate for the first time a hybridization of interface states across layers. In this way, our heterostructure forms an emergent atomic chain, where the interfaces act as lattice sites and the interface states act as atomic orbitals, as seen from our measurements by angle-resolved photoemission spectroscopy (ARPES). By changing the composition of the heterostructure, we can directly control hopping between lattice sites. We realize a topological and a trivial phase in our superlattice band structure. We argue that the superlattice may be characterized in a significant way by a one-dimensional topological invariant, closely related to the invariant of the Su-Schrieffer-Heeger model. Our topological insulator heterostructure demonstrates a novel experimental platform where we can engineer band structures by directly controlling how electrons hop between lattice sites.

cond-mat.mtrl-sci↗

arXiv2016

Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

cond-mat.supr-con↗

arXiv2015

Micro-metric electronic patterning of a topological band structure using a photon beam

In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system.

cond-mat.mtrl-sci↗

arXiv2015

Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

cond-mat.mtrl-sci↗

arXiv2014

Hallmarks of the Mott-Metal Crossover in the Hole Doped J=1/2 Mott insulator Sr2IrO4

The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. We investigate the evolution of electronic structure and dynamics of the hole-doped J=1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit multiple exotic features previously observed in doped cuprates - pseudogaps, Fermi "arcs", and marginal-Fermi-liquid-like electronic scattering rates, despite different mechanisms that forbid electron double-occupancy. We argue these universal features of the Mott-metal crossover are not related to preformed electron pairing, quantum criticality or density-wave formation as most commonly discussed. Instead, short-range antiferromagnetic correlations may play an indispensible role.

cond-mat.str-el↗