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Nicholas Hougland

Publications and source records attributed to Nicholas Hougland.

3 recordsLinked to original sources

A superconducting quantum circuit single artificial atom maser

We demonstrate a circuit QED analog of an atomic micromaser that utilizes an artificial, multi level atom, pumped into a population-inverted state by a microwave tone, as the gain medium. Our demonstration is enabled by the flexibility of the circuit QED platform, which allowed us to precisely engineer the level-structure, coupling, and dissipation of the micromaser components. Our device shows rich physics and perhaps points to ways to use the recent developments in the domain of microwave quantum circuits to probe the domain of maser physics.

quant-ph

Sketched Nanoscale KTaO3-Based Superconducting Quantum Interference Device

The discovery of two-dimensional superconductivity in LaAlO3/KTaO3 (111) and (110) interfaces has raised significant interest in this system. In this manuscript we report the first successful fabrication of a superconducting quantum interference device (DC-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope (c-AFM) lithography which can reversibly control the conductivity at the LAO/KTO(110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current, Ic(B), with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit-coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.

cond-mat.supr-con

Theory of engineering flat bands in graphene using doubly-periodic electrostatic gating

We explore the use of applied electrical potentials to induce band flattening in graphene for bands near zero energy. We consider various families of doubly periodic potentials and simulate their effect on the electronic band structure using a tight-binding and a continuum approach. From these families, we find that an applied potential with symmetries of wallpaper group 17, in particular a Kagome potential, works best for inducing a high degree of band flattening for a range of realistic potential amplitudes and periods. Our work indicates that it should be possible to engineer the band structure of graphene using electrostatic gating, thus enabling a new approach to the development of graphene-based metamaterials.

cond-mat.mes-hall