Nicolò M. della Ventura

arXiv2026

Reversible Modulation of Thermal Conductivity in GaN through Strain-Field Screening around Dislocations

Crystalline defects are generally regarded as static phonon scatterers that irreversibly suppress thermal transport. Here we show that elastic strain can reversibly modify dislocation-associated strain fields and strongly alter heat conduction. Using in situ strain-dependent time-domain thermoreflectance measurements, we observe a reversible enhancement of thermal conductivity in GaN by 23% under only 0.21% uniaxial strain. High-resolution X-ray diffraction reveals progressive narrowing of the symmetric (0002) reflection, indicating a reduction in the distribution of lattice rotations and heterogeneous strain. High-resolution electron backscatter diffraction directly shows that the spatial autocorrelations of multiple strain components decay over progressively shorter distances with applied strain, providing real-space evidence for enhanced screening of long-range strain fields. Raman spectroscopy further shows a non-monotonic evolution of the $E_{2}^{\mathrm{high}}$ phonon linewidth near the onset of the thermal-conductivity increase. Together, these results support a picture in which elastic strain reversibly reconfigures pinned dislocation lines and shortens the spatial range of their heterogeneous strain fields, thereby reducing phonon scattering. Our work establishes defect-associated strain correlations as a tunable degree of freedom for controlling thermal transport in crystalline solids.

cond-mat.mtrl-sci↗

arXiv2025

Orientation-Adaptive Virtual Imaging of Defects using EBSD

EBSD is a foundational technique for characterizing crystallographic orientation, phase distribution, and lattice strain. Embedded within EBSD patterns lies latent information on dislocation structures, subtly encoded due to their deviation from perfect crystallinity - a feature often underutilized. Here, a novel framework termed orientation-adaptive virtual apertures (OAVA) is introduced. OAVAs enable the generation of virtual images tied to specific diffraction conditions, allowing the direct visualization of individual dislocations from a single EBSD map. By dynamically aligning virtual apertures in reciprocal space with the local crystallographic orientation, the method enhances contrast from defect-related strain fields, mirroring the principles of diffraction-contrast imaging in TEM, but without sample tilting. The approach capitalizes on the extensive diffraction space captured in a single high-quality EBSD scan, with its effectiveness enhanced by modern direct electron detectors that offer high-sensitivity at low accelerating voltages, reducing interaction volume and improving spatial resolution. We demonstrate that using OAVAs, identical imaging conditions can be applied across a polycrystalline field-of-view, enabling uniform contrast in differently oriented grains. Furthermore, in single-crystal GaN, threading dislocations are consistently resolved. Algorithms for the automated detection of dislocation contrast are presented, advancing defect characterization. By using OAVAs across a wide range of diffraction conditions in GaN, the visibility/invisibility of defects, owing to the anisotropy of the elastic strain field, is assessed and linked to candidate Burgers vectors. Altogether, OAVA offers a new and high-throughput pathway for orientation-specific defect characterization with the potential for automated, large-area defect analysis in single and polycrystalline materials.

cond-mat.mtrl-sci↗