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Nicola Zorzi

Publications and source records attributed to Nicola Zorzi.

16 recordsLinked to original sources

Measurement of the $^{99}$Tc $β$ spectrum with Silicon Drift Detectors

The need for reliable calculations of Nuclear Matrix Elements is compelling for the next generation of neutrinoless double-beta decay experiments. This requires nuclear models to be validated against experimental data, such as non-unique forbidden $β$ decays, which have been found sensitive to details in nuclear calculations, most importantly to the renormalization of the axial and vector currents. %, parametrized as a quenching of $g_A$ and $g_V$. We report here a measurement of the 2$^{nd}$ forbidden $^{99}$Tc $β$ spectrum performed for the first time with Silicon Drift Detectors, state-of-the-art semiconductor detectors for low-energy spectroscopy. We designed a novel hybrid spectrometer using a LYSO crystal read by a SiPM to precisely calibrate our main detector and to accurately measure the background. We then compared our measured spectrum with one obtained using cryogenic calorimeters, as well as with predictions from the Realistic Shell Model. Starting from Realistic Shell Model calculations performed with Bare decay operators, we carried out a Bayesian analysis to extract the average quenching factors required to reproduce both the measured spectral shape and the experimental half-life, obtaining $q_{g_A}=0.40(1)$ and $q_{g_V}=0.47(1)$. These values quantify the average renormalization of the axial and vector currents, respectively, and were compared with those predicted by RSM calculations employing Effective decay operators, thereby providing a benchmark for assessing the ability of the model to describe the second-forbidden $β$ decay of $^{99}\mathrm{Tc}$. More broadly, this comparison tests the reliability of the theoretical framework also used to predict $0νββ$ nuclear matrix elements.

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Extended X-ray energy characterization of SIDDHARTA-2 large-area Silicon Drift Detectors up to 50 keV

The SIDDHARTA-2 experiment at the DA$Φ$NE collider of INFN-LNF performs high precision light kaonic atoms X-ray spectroscopy to investigate the kaon-nucleon(s) strong interaction in the low-energy (O(10 keV)) regime. A large area Silicon Drift Detectors (SDDs) system has been developed to carry out these measurements. The collaboration aims to extend the measurements campaign to higher mass kaonic atoms, which exhibit transition lines at increased X-ray energies. In this context, the spectroscopic response of the SIDDHARTA-2 SDD system was investigated in terms of linearity and energy resolution up to 50 keV. An accuracy of the energy calibration procedure $ΔE/E < 10^{-3}$ was achieved.

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The Wide Field Monitor (WFM) of the China-Europe eXTP (enhanced X-ray Timing and Polarimetry) mission

The eXTP mission is a major project of the Chinese Academy of Sciences (CAS), with a large involvement of Europe. Its scientific payload includes four instruments: SFA, PFA, LAD and WFM. They offer an unprecedented simultaneous wide-band Xray timing and polarimetry sensitivity. A large European consortium is contributing to the eXTP study, both for the science and the instrumentation. Europe is expected to provide two of the four instruments: LAD and WFM; the LAD is led by Italy and the WFM by Spain. The WFM for eXTP is based on the design originally proposed for the LOFT ESA M3 mission, that underwent a Phase A feasibility study. It will be a wide field of view X-ray monitor instrument working in the 2-50 keV energy range, achieved with large-area Silicon Drift Detectors (SDDs), similar to the ones used for the LAD but with better spatial resolution. The WFM will consist of 3 pairs of coded mask cameras with a total combined field of view (FoV) of 90x180 degrees at zero response and a source localisation accuracy of ~1 arc min. The main goal of the WFM is to provide triggers for the target of opportunity observations of the SFA, PFA and LAD, in order to perform the core science programme, dedicated to the study of matter under extreme conditions of density, gravity and magnetism. In addition, the unprecedented combination of large field of view and imaging capability, down to 2 keV, of the WFM will allow eXTP to make important discoveries of the variable and transient X-ray sky, and provide X-ray coverage of a broad range of astrophysical objects covered under 'observatory science', such as gamma-ray bursts, fast radio bursts, gravitational wave electromagnetic counterparts. In this paper we provide an overview of the WFM instrument, explaining its design, configuration, and anticipated performance.

astro-ph.IM↗

STROBE-X High Energy Modular Array (HEMA)

The High Energy Modular Array (HEMA) is one of three instruments that compose the STROBE-X mission concept. The HEMA is a large-area, high-throughput non-imaging pointed instrument based on the Large Area Detector developed as part of the LOFT mission concept. It is designed for spectral timing measurements of a broad range of sources and provides a transformative increase in sensitivity to X-rays in the energy range of 2--30 keV compared to previous instruments, with an effective area of 3.4 m$^{2}$ at 8.5 keV and an energy resolution of better than 300 eV at 6 keV in its nominal field of regard.

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The XGIS instrument on-board THESEUS: the detection plane and on-board electronics

The X and Gamma Imaging Spectrometer instrument on-board the THESEUS mission (selected by ESA in the framework of the Cosmic Vision M5 launch opportunity, currently in phase A) is based on a detection plane composed of several thousands of single active elements. Each element comprises a 4.5x4.5x30 mm 3 CsI(Tl) scintillator bar, optically coupled at both ends to Silicon Drift Detectors (SDDs). The SDDs acts both as photodetectors for the scintillation light and as direct X-ray sensors. In this paper the design of the XGIS detection plane is reviewed, outlining the strategic choices in terms of modularity and redundancy of the system. Results on detector-electronics prototypes are also described. Moreover, the design and development of the low-noise front-end electronics is presented, emphasizing the innovative architectural design based on custom-designed Application-Specific Integrated Circuits (ASICs).

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The X/Gamma-ray Imaging Spectrometer (XGIS) on-board THESEUS: design, main characteristics, and concept of operation

THESEUS is one of the three missions selected by ESA as fifth medium class mission (M5) candidates in its Cosmic Vision science program, currently under assessment in a phase A study with a planned launch date in 2032. THESEUS is designed to carry on-board two wide and deep sky monitoring instruments for X/gamma-ray transients detection: a wide-field soft X-ray monitor with imaging capability (Soft X-ray Imager, SXI, 0.3 - 5 keV), a hard X-ray, partially-imaging spectroscopic instrument (X and Gamma Imaging Spectrometer, XGIS, 2 keV - 10 MeV), and an optical/near-IR telescope with both imaging and spectroscopic capability (InfraRed Telescope, IRT, 0.7 - 1.8 $μ$m). The spacecraft will be capable of performing fast repointing of the IRT to the error region provided by the monitors, thus allowing it to detect and localize the transient sources down to a few arcsec accuracy, for immediate identification and redshift determination. The prime goal of the XGIS will be to detect transient sources, with monitoring timescales down to milliseconds, both independently of, or following, up SXI detections, and identify the sources performing localisation at < 15 arcmin and characterize them over a broad energy band, thus providing also unique clues to their emission physics. The XGIS system consists of two independent but identical coded mask cameras, arranged to cover 2 steradians . The XGIS will exploit an innovative technology coupling Silicon Drift Detectors (SDD) with crystal scintillator bars and a very low-noise distributed front-end electronics (ORION ASICs), which will produce a position sensitive detection plane, with a large effective area over a huge energy band (from soft X-rays to soft gamma-rays) with timing resolution down to a few $μ$s.Here is presented an overview of the XGIS instrument design, its configuration, and capabilities.

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The Large Area Detector onboard the eXTP mission

The eXTP (enhanced X-ray Timing and Polarimetry) mission is a major project of the Chinese Academy of Sciences (CAS) and China National Space Administration (CNSA) currently performing an extended phase A study and proposed for a launch by 2025 in a low-earth orbit. The eXTP scientific payload envisages a suite of instruments (Spectroscopy Focusing Array, Polarimetry Focusing Array, Large Area Detector and Wide Field Monitor) offering unprecedented simultaneous wide-band X-ray spectral, timing and polarimetry sensitivity. A large European consortium is contributing to the eXTP study and it is expected to provide key hardware elements, including a Large Area Detector (LAD). The LAD instrument for eXTP is based on the design originally proposed for the LOFT mission within the ESA context. The eXTP/LAD envisages a deployed 3.4 m2 effective area in the 2-30 keV energy range, achieved through the technology of the large-area Silicon Drift Detectors - offering a spectral resolution of up to 200 eV FWHM at 6 keV - and of capillary plate collimators - limiting the field of view to about 1 degree. In this paper we provide an overview of the LAD instrument design, including new elements with respect to the earlier LOFT configuration.

astro-ph.IM↗

Thin and edgeless sensors for ATLAS pixel detector upgrade

To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented.

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Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs

We report on the characterization of near-ultraviolet high density silicon photomultiplier (\SiPM) developed at Fondazione Bruno Kessler (\FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the \SiPMs\ between 40 and 300~K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to 7 orders of magnitude between room temperature and 40~K. We demonstrate that it is possible to operate the \FBK\ near-ultraviolet high density \SiPMs\ at temperatures lower than 100~K with a dark rate below 0.01 cps/mm$^2$ and total correlated noise probability below 35\% at an over-voltage of 6~V. These results are relevant for the development of future cryogenic particle detectors using \SiPMs\ as photosensors.

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Performance of active edge pixel sensors

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings.

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Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.

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The INFN-FBK Phase-2 R{\&}D Program

We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.

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First Production of New Thin 3D Sensors for HL-LHC at FBK

Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

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Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

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Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

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