arXiv subjects

Nicolas Vernier

Publications and source records attributed to Nicolas Vernier.

17 recordsLinked to original sources

arXiv2023

Poisson's process in the propagation of magnetic domain wall in perpendicularly magnetized film

We present here a statistical study of the transit time required for a magnetic domain wall to go through a small laser spot focused on 2D magnetic thin film. The domain wall velocity deduced this way is in good agreement with the other ways used to measure this parameter. But, the main fact is that the transit time is not a reproducible parameter, we have observed a quite large distribution of this parameter. This distribution can be explained assuming the movement to occur through jumps, whose probabilities are given by a Poisson's process. The fitting of this distribution has enabled us to get the required number of jumps to reverse the magnetization of the small area under the laser spot. This important parameter should lead to a better understanding of the creep regime.

cond-mat.str-el↗

arXiv2022

Real-time probing of magnetic domain wall dynamic

We present a study of a very seldom used way of measuring magnetic domain wall velocity, which makes it possible to have a real-time probing of the domain movement in the area illuminated by a laser spot. We have compared this method to the most usual one: although the velocities are similar, the different method do not give the same results if the laser spot is too small. It can be explained by a dendritic shape of the domain wall. By changing the size spot, we propose a basic model which describes quite well the transit time in the laser spot as a function of its size and makes it possible to extract the velocity and the depth of the dendrites.

physics.app-ph↗

arXiv2022

Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion

Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films.

cond-mat.mtrl-sci↗

arXiv2020

Highly anisotropic magnetic domain wall behavior in-plane magnetic films

We have studied nucleation of magnetic domains and propagation of magnetic domain walls (DWs) induced by pulsed magnetic field in a ferromagnetic film with in-plane uniaxial anisotropy. Different from what have been seen up to now in out-of-plane anisotropy films, the nucleated domains have a rectangular shape in which a pair of the opposite sides are perfectly linear DWs, while the other pair present zigzags. This can be explained by magnetostatic optimization, knowing that the pulse field is applied parallel to the easy magnetization axis. The field induced propagation of these two DW types are very different. The linear ones follow a creep law identical to what is usually observed in out-of-plane films, when the velocity of zigzag DWs depends linearly on the applied field amplitude down to very low field. This most unusual feature can be explained by the shape of the DW, which makes it possible to go round the pinning defects. Thanks to that, it seems that propagation of zigzag walls agrees with the 1D model, and these results provide a first experimental evidence of the 1D model relevance in two dimensional ferromagnetic thin films. Let's note that it is the effective DW width parallel to DW propagation direction that matters in the 1D model formula, which is a relevant change when dealing with zigzag DWs.

cond-mat.mtrl-sci↗

arXiv2019

Domain-wall motion induced by spin transfer torque delivered by helicity-dependent femtosecond laser

In magnetic wires with perpendicular anisotropy, moving domain with only current or only circularly polarized light requires a high power. Here, we propose to reduce it by using both short current pulses and femtosecond laser pulses simultaneously. The wires were made out of perpendicularly magnetized film of Pt/Co/Ni/Co/Pt. The displacement of the domain wall is found to be dependent on the laser helicity. Based on a quantitative analysis of the current-induced domain wall motion, the spin orbit torque contribution can be neglected when compared to the spin transfer torque contribution. The effective field of the spin transfer torque is extracted from the pulsed field domain wall measurements. Finally, our result can be described using the Fatuzzo-Labrune model and considering the effective field due to the polarized laser beam, the effective field due to spin transfer torque, and the Gaussian temperature distribution of the laser spot.

cond-mat.mes-hall↗

arXiv2019

Low spin-polarization in the heavy metal\ferromagnet structures detected through the domain wall motion by synchronized magnetic field and current

CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a spin-polarized current, and this limits the perspectives of racetrack memory driven by the current-in-plane mechanism. To investigate this phenomenon, we performed experiments of DW velocity measurement by applying a magnetic field and a current simultaneously. Working in the precessional regime, we have been able to see a very important effect of the spin-polarized current, which allows evaluating the polarization rate of the charge carriers. An unexpected quite low spin polarization rate down to 0.26 have been obtained, which can explain the low efficiency of DW motion induced by the spin-polarized current. Possible reasons for this low rate are analyzed, such as the spin relaxation in the Ta layer.

cond-mat.mtrl-sci↗

arXiv2018

Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

physics.app-ph↗

arXiv2018

Magnetoresistive sensors based on the elasticity of domain walls

Magnetic sensors based on the magnetoresistance effects have a promising application prospect due to their excellent sensitivity and advantages in terms of the integration. However, competition between higher sensitivity and larger measuring range remains a problem. Here, we propose a novel mechanism for the design of magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic Domain Wall (DW) in the free layer of a spin valve or a magnetic tunnel junction. Performances of devices based on this mechanism, such as the sensitivity and the measuring range can be tuned by manipulating the geometry of the device, without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via micromagnetic simulation.

cond-mat.mes-hall↗

arXiv2017

Direct observation of domain wall surface tension by deflating or inflating a magnetic bubble

The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena have not been well understood. Moreover, a reliable method to quantify the DW surface energy is still missing. Here, we report a series of experiments in which the DW surface energy becomes a dominant parameter. We observed that a semicircular magnetic domain bubble could spontaneously collapse under the Laplace pressure induced by DW surface energy. We further demonstrated that the surface energy could lead to a geometrically induced pinning when the DW propagates in a Hall cross or from a nanowire into a nucleation pad. Based on these observations, we developed two methods to quantify the DW surface energy, which could be very helpful to estimate intrinsic parameters such as Dzyaloshinskii-Moriya Interactions (DMI) or exchange stiffness in magnetic ultra-thin films.

cond-mat.mes-hall↗

arXiv2016

Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the creep regime where DW velocities are low due to strong interactions with pinning sites. Here, we show gate voltage modulation of DW velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2 structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.

cond-mat.mtrl-sci↗

arXiv2015

Current Induced Fingering Instability in Magnetic Domain Walls

The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.

cond-mat.mtrl-sci↗

arXiv2013

Modified current induced domain wall motion in GaMnAs nanowire

We report on current induced domain wall propagation in a patterned GaMnAs microwire with perpendicular magnetization. An unexpected slowing down of the propagation velocity has been found when the moving domain wall extends over only half of the width of the wire. This slowing down is related to the elongation of a longitudinal wall along the axis of the wire. By using an energy balance argument, the expected theoretical dependence of the velocity change has been calculated and compared with the experimental results. According to this, the energy associated to the longitudinal domain wall should change when a current passes through the wire. These results provide possible evidence of transverse spin diffusion along a longitudinal domain wall.

cond-mat.mes-hall↗

arXiv2012

Interfacial charge accumulation effect on magnetic domain wall nucleation and propagation in a Pt/Co/Pt/Al2O3 structure

We report direct observation of charge accumulation effect on magnetization reversal in a Pt/Co(0.5 nm)/Pt(0.5 nm)/Al2O3 structure with perpendicular anisotropy. By imaging magnetic domain with polar Kerr microscopy, we evidence that positive charges accumulating at the Pt/Al2O3 interface result in favoring magnetic domain wall propagation, while negative charges hinder domain wall nucleation and propagation. Our results suggest that magnetic properties in Co layer can be strongly influenced by 5d electron accumulation/depletion in an ultrathin Pt layer.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques.

cond-mat.mtrl-sci↗

arXiv2006

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.

cond-mat.mtrl-sci↗

arXiv2004

Universality of thermally assisted magnetic domain wall motion under spin torque

Thermally assisted motion of magnetic domain wall under spin torque is studied theoretically. It is shown that the wall velocity $v$ depends exponentially on the spin current, $\Is$, below the threshold value, in the same way as in a thermally activated motion driven by a force. A novel property of the spin torque driven case at low temperature is that the linear term in spin current is universal, i.e., $\ln v \sim \frac{π\hbar}{2e}(\Is/\kB T)$. This behavior, which is independent of pinning and material constants, could be used to confirm experimentally the spin torque as the driving mechanism.

cond-mat.mes-hall↗

arXiv2003

Domain wall propagation in magnetic nanowires by spin polarized current injection

We demonstrate movement of a head-to-head domain wall through a magnetic nanowire simply by passing an electrical current through the domain wall and without any external magnetic field applied. The effect depends on the sense and magnitude of the electrical current and allows direct propagation of domain walls through complex nanowire shapes, contrary to the case of magnetic field induced propagation. The efficiency of this mechanism has been evaluated and the effective force acting on the wall has been found equal to 0.88x10-9 N.A-1.

cond-mat.mtrl-sci↗